Surface chemistry and preferential crystal orientation on the H and Cl terminated silicon surface

2007 ◽  
Vol 101 (3) ◽  
pp. 033531 ◽  
Author(s):  
H. Shirai ◽  
T. Saito ◽  
Y. Li ◽  
H. Matsui ◽  
T. Kobayashi
Keyword(s):  
Surface Chemistry ◽  
Crystal Orientation ◽  
Silicon Surface ◽  
Preferential Crystal Orientation

Electron-and ion-assisted silicon surface chemistry in a DC-excited CHF3plasma

1991 ◽  
Vol 24 (6) ◽  
pp. 887-903
Author(s):  
C Lejeune ◽  
Ch Cardinaud ◽  
E Collard ◽  
J P Grandchamp ◽  
G Turban
Keyword(s):  
Surface Chemistry ◽  
Silicon Surface ◽  
Silicon Surface Chemistry

scholarly journals Dielectric properties of BaTiO3–Bi(Mg1/2Ti1/2)O3 films with preferential crystal orientation

2016 ◽  
Vol 124 (6) ◽  
pp. 648-652 ◽  
Author(s):  
Shota MOKI ◽  
Junichi KIMURA ◽  
Hiroshi FUNAKUBO ◽  
Hiroshi UCHIDA
Keyword(s):  
Dielectric Properties ◽  
Crystal Orientation ◽  
Preferential Crystal Orientation

Sol–gel preparation of transparent zinc oxide films with highly preferential crystal orientation

Vacuum ◽  
2004 ◽  
Vol 77 (1) ◽  
pp. 57-62 ◽  
Author(s):  
Hongxia Li ◽  
Jiyang Wang ◽  
Hong Liu ◽  
Changhong Yang ◽  
Hongyan Xu ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Crystal Orientation ◽  
Sol Gel ◽  
Oxide Films ◽  
Zinc Oxide Films ◽  
Gel Preparation ◽  
Preferential Crystal Orientation

Crystalline Polyimide Thin Film Deposition by Ionized Cluster Bean

1989 ◽  
Vol 157 ◽  
Author(s):  
S.J. Cho ◽  
H.S. Choe ◽  
H.G. Jang ◽  
S.S. Iim ◽  
C.N. Whang
Keyword(s):  
Crystal Orientation ◽  
Thin Film Deposition ◽  
Polyimide Film ◽  
Film Deposition ◽  
Ion Acceleration ◽  
Cluster Beam ◽  
Cluster Beam Deposition ◽  
Acceleration Voltage ◽  
Preferential Crystal Orientation ◽  
Beam Deposition

ABSTRACTPolyimide thin films are deposited by the ionized cluster beam deposition( ICBD ) technique. Polymerization and crystallization of polyimide were investigated using TEN, IR, and the electronic structure of the polyimide film was investigated using XPS. Films deposited at optimum ion acceleration voltage showed strong preferential crystal orientation. Crystalline polyimide film was obtained at ion acceleration voltage of 700 V.

Dielectric Properties of Highly (001)-Plane Oriented SrBi4Ti4O15 Thin Films

2010 ◽  
Vol 445 ◽  
pp. 131-134
Author(s):  
Yuki Mizutani ◽  
Hiroshi Uchida ◽  
Hiroshi Funakubo ◽  
Seiichiro Koda
Keyword(s):  
Thin Films ◽  
Crystal Orientation ◽  
Substrate Surface ◽  
Dielectric Constants ◽  
Frequency Range ◽  
Si Substrate ◽  
Capacitance Change ◽  
Solution Deposition ◽  
Current Densities ◽  
Preferential Crystal Orientation

Thin films of a bismuth layer-structured dielectric oxides (BLSD), SrBi4Ti4O15, with preferential crystal orientation were prepared by means of chemical solution deposition (CSD) technique on (111)Pt/(100)Si substrate with bottom nucleation layers of conductive perovskite oxides, LaNiO3 and SrRuO3. CSD technique was utilized for the film preparation of SrBi4Ti4O15. These films possessed highly crystal orientation of (00l) BLSD planes parallel to the substrate surface. The leakage current densities of the SrBi4Ti4O15 films on (100)SrRuO3//(100)LaNiO3/(111)Pt/Ti/(100)Si and on (100)LaNiO3/(111)Pt/Ti/(100)Si were approximately 10-6 and 10-7 A/cm2 respectively. The dielectric constants of these films in a frequency range of 102 - 106 Hz were from 310 to 350 and 250 to 260 respectively. The value of capacitance change of these films in the range from 20 to 300 oC was about +8 and +5% respectively.

Silicon Surface Chemistry By IR Spectroscopy in the Mid- To Far-IR Region: H2O And Ethanol On Si(100)

1995 ◽  
Vol 386 ◽  
Author(s):  
L. M. Struck ◽  
J. Eng ◽  
B. E. Bent ◽  
Y. J. Chabal ◽  
G. P. Williams ◽  
...  
Keyword(s):  
Ir Spectroscopy ◽  
Surface Chemistry ◽  
Silicon Surface ◽  
Cobalt Silicide ◽  
Silicide Layer ◽  
Silicon Surface Chemistry ◽  
Ion Implanted

ABSTRACTThe technique of external reflection infrared (IR) spectroscopy is used to study silicon surface chemistry. External reflection is enhanced by implanting a buried cobalt silicide layer in silicon to act as an infrared reflector. The preparation of clean well-ordered surfaces from the ion implanted substrates is demonstrated. The reactions of water and ethanol with Si(100) are investigated.

POROUS SILICON: SURFACE CHEMISTRY

1994 ◽  
pp. 261-274 ◽  
Author(s):  
Kun-hsi Li ◽  
Dennis C. Diaz ◽  
Joe C. Campbell ◽  
Chaochieh Tsai
Keyword(s):  
Porous Silicon ◽  
Surface Chemistry ◽  
Silicon Surface ◽  
Porous Silicon Surface ◽  
Silicon Surface Chemistry

Azide Reactions for Controlling Clean Silicon Surface Chemistry:  Benzylazide on Si(100)-2 × 1

2006 ◽  
Vol 128 (29) ◽  
pp. 9300-9301 ◽  
Author(s):  
Semyon Bocharov ◽  
Olga Dmitrenko ◽  
Lucila P. Méndez De Leo ◽  
Andrew V. Teplyakov
Keyword(s):  
Surface Chemistry ◽  
Silicon Surface ◽  
Silicon Surface Chemistry ◽  
Clean Silicon Surface

Study of oxygen addition to CF3Br reactive ion etching plasmas: Effects on silicon surface chemistry and etching behavior

1989 ◽  
Vol 54 (23) ◽  
pp. 2321-2323 ◽  
Author(s):  
T. D. Bestwick ◽  
G. S. Oehrlein ◽  
D. Angell ◽  
P. L. Jones ◽  
J. W. Corbett
Keyword(s):  
Surface Chemistry ◽  
Silicon Surface ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Etching Behavior ◽  
Oxygen Addition ◽  
Silicon Surface Chemistry

Nanoasperity Adhesion of the Silicon Surface in Humid Air: The Roles of Surface Chemistry and Oxidized Layer Structures

Langmuir ◽  
2020 ◽  
Vol 36 (20) ◽  
pp. 5483-5491 ◽  
Author(s):  
Chen Xiao ◽  
Chao Chen ◽  
Yangyang Yao ◽  
Hongshen Liu ◽  
Lei Chen ◽  
...  
Keyword(s):  
Surface Chemistry ◽  
Silicon Surface ◽  
Humid Air ◽  
Layer Structures
Sign in / Sign up

Export Citation Format

Share Document