Silicon Surface Chemistry By IR Spectroscopy in the Mid- To Far-IR Region: H2O And Ethanol On Si(100)

1995 ◽  
Vol 386 ◽  
Author(s):  
L. M. Struck ◽  
J. Eng ◽  
B. E. Bent ◽  
Y. J. Chabal ◽  
G. P. Williams ◽  
...  
Keyword(s):  
Ir Spectroscopy ◽  
Surface Chemistry ◽  
Silicon Surface ◽  
Cobalt Silicide ◽  
Silicide Layer ◽  
Silicon Surface Chemistry ◽  
Ion Implanted

ABSTRACTThe technique of external reflection infrared (IR) spectroscopy is used to study silicon surface chemistry. External reflection is enhanced by implanting a buried cobalt silicide layer in silicon to act as an infrared reflector. The preparation of clean well-ordered surfaces from the ion implanted substrates is demonstrated. The reactions of water and ethanol with Si(100) are investigated.

Electron-and ion-assisted silicon surface chemistry in a DC-excited CHF3plasma

1991 ◽  
Vol 24 (6) ◽  
pp. 887-903
Author(s):  
C Lejeune ◽  
Ch Cardinaud ◽  
E Collard ◽  
J P Grandchamp ◽  
G Turban
Keyword(s):  
Surface Chemistry ◽  
Silicon Surface ◽  
Silicon Surface Chemistry

POROUS SILICON: SURFACE CHEMISTRY

1994 ◽  
pp. 261-274 ◽  
Author(s):  
Kun-hsi Li ◽  
Dennis C. Diaz ◽  
Joe C. Campbell ◽  
Chaochieh Tsai
Keyword(s):  
Porous Silicon ◽  
Surface Chemistry ◽  
Silicon Surface ◽  
Porous Silicon Surface ◽  
Silicon Surface Chemistry

Azide Reactions for Controlling Clean Silicon Surface Chemistry:  Benzylazide on Si(100)-2 × 1

2006 ◽  
Vol 128 (29) ◽  
pp. 9300-9301 ◽  
Author(s):  
Semyon Bocharov ◽  
Olga Dmitrenko ◽  
Lucila P. Méndez De Leo ◽  
Andrew V. Teplyakov
Keyword(s):  
Surface Chemistry ◽  
Silicon Surface ◽  
Silicon Surface Chemistry ◽  
Clean Silicon Surface

Study of oxygen addition to CF3Br reactive ion etching plasmas: Effects on silicon surface chemistry and etching behavior

1989 ◽  
Vol 54 (23) ◽  
pp. 2321-2323 ◽  
Author(s):  
T. D. Bestwick ◽  
G. S. Oehrlein ◽  
D. Angell ◽  
P. L. Jones ◽  
J. W. Corbett
Keyword(s):  
Surface Chemistry ◽  
Silicon Surface ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Etching Behavior ◽  
Oxygen Addition ◽  
Silicon Surface Chemistry

scholarly journals Ionic Liquids Can Permanently Modify Porous Silicon Surface Chemistry

2016 ◽  
Vol 22 (33) ◽  
pp. 11677-11684 ◽  
Author(s):  
Shruti Trivedi ◽  
Sidney G. Coombs ◽  
Durgesh V. Wagle ◽  
Nakara Bhawawet ◽  
Gary A. Baker ◽  
...  
Keyword(s):  
Ionic Liquids ◽  
Porous Silicon ◽  
Surface Chemistry ◽  
Silicon Surface ◽  
Porous Silicon Surface ◽  
Silicon Surface Chemistry

Alkyl radical involvement in silicon surface chemistry

1987 ◽  
Vol 179 (1) ◽  
pp. A5 ◽  
Author(s):  
M.J. Bozack ◽  
P.A. Taylor ◽  
W.J. Choyke ◽  
J.T. Yates
Keyword(s):  
Surface Chemistry ◽  
Silicon Surface ◽  
Alkyl Radical ◽  
Silicon Surface Chemistry

Single Backside Cleaning on Silicon, Silicon Nitride and Silicon Oxide

2005 ◽  
Vol 103-104 ◽  
pp. 249-254 ◽  
Author(s):  
Lucile Broussous ◽  
Pascal Besson ◽  
M.M. Frank ◽  
D. Bourgeat
Keyword(s):  
Silicon Nitride ◽  
Surface Chemistry ◽  
Silicon Surface ◽  
Etch Rate ◽  
Silicon Oxide ◽  
Independent Control ◽  
Cleaning Solution ◽  
Silicon Surface Chemistry ◽  
Silicon Silicon

In this study, we used an SEZ single-wafer spin-processor to develop a single backside cleaning solution able to remove any metallic or exotic contaminants by etching a few angstroms of the wafer backside, whatever its coating (no coating, Si3N4 or SiO2). An H2O:H2O2:H2SO4:HF mixture was selected because it allowed independent control of the etch rate on the 3 materials of interest, without roughening to much the silicon surface. Chemistry efficiency was then checked on wafers intentionally contaminated with various metals, and on “production wafers” contaminated during exotic materials deposition or classical copper processes.

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