Study of oxygen addition to CF3Br reactive ion etching plasmas: Effects on silicon surface chemistry and etching behavior

1989 ◽  
Vol 54 (23) ◽  
pp. 2321-2323 ◽  
Author(s):  
T. D. Bestwick ◽  
G. S. Oehrlein ◽  
D. Angell ◽  
P. L. Jones ◽  
J. W. Corbett
Keyword(s):  
Surface Chemistry ◽  
Silicon Surface ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Etching Behavior ◽  
Oxygen Addition ◽  
Silicon Surface Chemistry

Effects of Post Etch Treatments on Contaminated Silicon Surface Due to Chf3/C2F6 Reactive ion Etching

1993 ◽  
Vol 315 ◽  
Author(s):  
H.-H. Park ◽  
K.-H. Kwon ◽  
S.-H. Lee ◽  
S. Nahm ◽  
J.-W. Lee ◽  
...  
Keyword(s):  
Silicon Surface ◽  
Reactive Ion Etching ◽  
Ion Etching

Electron-and ion-assisted silicon surface chemistry in a DC-excited CHF3plasma

1991 ◽  
Vol 24 (6) ◽  
pp. 887-903
Author(s):  
C Lejeune ◽  
Ch Cardinaud ◽  
E Collard ◽  
J P Grandchamp ◽  
G Turban
Keyword(s):  
Surface Chemistry ◽  
Silicon Surface ◽  
Silicon Surface Chemistry

Surface chemistry of 6H-SiC(000) after reactive ion etching

1997 ◽  
Vol 6 (10) ◽  
pp. 1451-1455 ◽  
Author(s):  
N. Sieber ◽  
M. Hollering ◽  
L. Ley
Keyword(s):  
Surface Chemistry ◽  
Reactive Ion Etching ◽  
Ion Etching

Silicon Surface Chemistry By IR Spectroscopy in the Mid- To Far-IR Region: H2O And Ethanol On Si(100)

1995 ◽  
Vol 386 ◽  
Author(s):  
L. M. Struck ◽  
J. Eng ◽  
B. E. Bent ◽  
Y. J. Chabal ◽  
G. P. Williams ◽  
...  
Keyword(s):  
Ir Spectroscopy ◽  
Surface Chemistry ◽  
Silicon Surface ◽  
Cobalt Silicide ◽  
Silicide Layer ◽  
Silicon Surface Chemistry ◽  
Ion Implanted

ABSTRACTThe technique of external reflection infrared (IR) spectroscopy is used to study silicon surface chemistry. External reflection is enhanced by implanting a buried cobalt silicide layer in silicon to act as an infrared reflector. The preparation of clean well-ordered surfaces from the ion implanted substrates is demonstrated. The reactions of water and ethanol with Si(100) are investigated.

Highly Controllable Nano-texturing of Silicon Using Hydrogen-assisted Reactive Ion Etching

2010 ◽  
Vol 1258 ◽  
Author(s):  
Mahdieh Mehran ◽  
Zeinab Sanaee ◽  
Shamsoddin Mohajerzadeh
Keyword(s):  
Silicon Surface ◽  
Oil Spills ◽  
Reactive Ion Etching ◽  
Rf Plasma ◽  
Silicon Substrates ◽  
Gas Flows ◽  
Plasma Power ◽  
Etching Technique ◽  
Ion Etching ◽  
Etching Parameters

AbstractWe propose a hydrogen assisted reactive ion etching method for generating nano-grass and nano-texturing of silicon substrates in desirable shapes and locations. The etching technique is based on sequential etching and passivation steps where a combination of three gases of H2, O2 and SF6 in the presence of RF plasma is exploited. Using this method it has been possible to realize high aspect ratio features on silicon substrates whereas by adjusting the etching parameters, it is possible to form texturing of silicon in desired places. This technique is highly programmable where the pressure, gas flows, plasma power and duration of each cycle can be preset to achieve desired features. The formation of nano-grass on the silicon surface improves its wetability both to water and oil spills.

POROUS SILICON: SURFACE CHEMISTRY

1994 ◽  
pp. 261-274 ◽  
Author(s):  
Kun-hsi Li ◽  
Dennis C. Diaz ◽  
Joe C. Campbell ◽  
Chaochieh Tsai
Keyword(s):  
Porous Silicon ◽  
Surface Chemistry ◽  
Silicon Surface ◽  
Porous Silicon Surface ◽  
Silicon Surface Chemistry
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