Influence of impurities and structural properties on the device stability of pentacene thin film transistors

2007 ◽  
Vol 101 (4) ◽  
pp. 044504 ◽  
Author(s):  
D. Knipp ◽  
A. Benor ◽  
V. Wagner ◽  
T. Muck
Keyword(s):  
Thin Film ◽  
Structural Properties ◽  
Thin Film Transistors ◽  
Device Stability ◽  
Influence Of Impurities

Influence of The Dielectric on The Growth and Performance of Pentacene Thin Film Transistors

2001 ◽  
Vol 708 ◽  
Author(s):  
D. Knipp ◽  
R. A. Street ◽  
B. Krusor ◽  
J. Ho ◽  
R. B. Apte
Keyword(s):  
Thin Film ◽  
Transport Properties ◽  
Structural Properties ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Clear Correlation ◽  
Force Microscopy ◽  
Atomic Force ◽  
And Performance ◽  
Device Properties

ABSTRACTThe electronic transport and the device properties of pentacene thin film transistors are reported, showing the influence of the dielectric on the structural and transport properties. The structure and morphology of pentacene films on organic and inorganic dielectrics were compared by x-ray diffraction measurements and atomic force microscopy. For the investigated dielectrics we observed a clear correlation between the morphology and the structural properties of the highly polycrystalline films. In the case of inorganic dielectrics the roughness of the dielectric has a distinct influence on the morphology and the structural properties, whereas the films on organic dielectrics bonding between pentacene and the dielectric may have an influence on the growth mechanism. We find that careful control of the deposition conditions give films with similar transport properties on organic and inorganic dielectrics. To study the electronic properties we have realized inverted staggered transistors. The TFTs exhibit mobilities of ∼0.4 cm2/Vs and on/off ratios of 108 on organic and inorganic dielectrics. The influence of the dielectric on the device mobility, threshold voltage and sub-threshold voltage slope are discussed.

Structural Properties and Electrical Characteristics of High-κ Tm2O3 Gate Dielectrics for InGaZnO Thin Film Transistors

2014 ◽  
Vol 6 (9) ◽  
pp. 1973-1978
Author(s):  
Tung-Ming Pan ◽  
Fa-Hsyang Chen ◽  
Meng-Ning Hung ◽  
Jim-Long Her ◽  
Keiichi Koyama
Keyword(s):  
Thin Film ◽  
Structural Properties ◽  
Thin Film Transistors ◽  
Gate Dielectrics ◽  
Electrical Characteristics

Structural properties and electrical characteristics of Ho2O3 and HoTixOy gate dielectrics for a-InGaZnO thin-film transistors

RSC Advances ◽  
2014 ◽  
Vol 4 (55) ◽  
pp. 29300-29304 ◽  
Author(s):  
Tung-Ming Pan ◽  
Ching-Hung Chen ◽  
Jiang-Hung Liu
Keyword(s):  
Thin Film ◽  
Structural Properties ◽  
Thin Film Transistors ◽  
Gate Dielectrics ◽  
Electrical Characteristics ◽  
Output Characteristics ◽  
Igzo Tft

Transfer and output characteristics of high-κ Ho2O3 and HoTixOy a-IGZO TFT devices.

High-Performance Al–Sn–Zn–In–O Thin-Film Transistors: Impact of Passivation Layer on Device Stability

2010 ◽  
Vol 31 (2) ◽  
pp. 144-146 ◽  
Author(s):  
Shinhyuk Yang ◽  
Doo-Hee Cho ◽  
Min Ki Ryu ◽  
Sang-Hee Ko Park ◽  
Chi-Sun Hwang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Passivation Layer ◽  
Device Stability
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