Structural properties and electrical characteristics of Ho2O3 and HoTixOy gate dielectrics for a-InGaZnO thin-film transistors

RSC Advances ◽  
2014 ◽  
Vol 4 (55) ◽  
pp. 29300-29304 ◽  
Author(s):  
Tung-Ming Pan ◽  
Ching-Hung Chen ◽  
Jiang-Hung Liu
Keyword(s):  
Thin Film ◽  
Structural Properties ◽  
Thin Film Transistors ◽  
Gate Dielectrics ◽  
Electrical Characteristics ◽  
Output Characteristics ◽  
Igzo Tft

Transfer and output characteristics of high-κ Ho2O3 and HoTixOy a-IGZO TFT devices.

Structural Properties and Electrical Characteristics of High-κ Tm2O3 Gate Dielectrics for InGaZnO Thin Film Transistors

2014 ◽  
Vol 6 (9) ◽  
pp. 1973-1978
Author(s):  
Tung-Ming Pan ◽  
Fa-Hsyang Chen ◽  
Meng-Ning Hung ◽  
Jim-Long Her ◽  
Keiichi Koyama
Keyword(s):  
Thin Film ◽  
Structural Properties ◽  
Thin Film Transistors ◽  
Gate Dielectrics ◽  
Electrical Characteristics

Effects of Polystyrene Gate Dielectrics with Various Molecular Weights on Electrical Characteristics of Pentacene Thin-Film Transistors

2014 ◽  
Vol 598 (1) ◽  
pp. 129-134 ◽  
Author(s):  
Sung Woo Lee ◽  
Dong Wook Kim ◽  
Hyunji Shin ◽  
Jong Sun Choi ◽  
Jin-Hyuk Bae ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Dielectrics ◽  
Electrical Characteristics ◽  
Molecular Weights

scholarly journals Structural and electrical characteristics of high-κ Er2O3 and Er2TiO5 gate dielectrics for a-IGZO thin-film transistors

2013 ◽  
Vol 8 (1) ◽  
pp. 18 ◽  
Author(s):  
Fa-Hsyang Chen ◽  
Jim-Long Her ◽  
Yu-Hsuan Shao ◽  
Yasuhiro H Matsuda ◽  
Tung-Ming Pan
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Dielectrics ◽  
Electrical Characteristics

scholarly journals Electrical Characteristics and Stability Improvement of Top-Gate In-Ga-Zn-O Thin-Film Transistors with Al2O3/TEOS Oxide Gate Dielectrics

Coatings ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 1146
Author(s):  
Yih-Shing Lee ◽  
Yu-Hsin Wang ◽  
Tsung-Cheng Tien ◽  
Tsung-Eong Hsieh ◽  
Chun-Hung Lai
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Single Layer ◽  
Charge Trapping ◽  
Indium Gallium Zinc Oxide ◽  
Electrical Characteristics ◽  
Electrical Stability ◽  
Bias Stress

In this work, two stacked gate dielectrics of Al2O3/tetraethyl-orthosilicate (TEOS) oxide were deposited by using the equivalent capacitance with 100-nm thick TEOS oxide on the patterned InGaZnO layers to evaluate the electrical characteristics and stability improvement of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) devices, including positive bias stress (PBS) and negative bias stress (NBS) tests. Three different kinds of gate dielectrics (Al2O3, TEOS, Al2O3/TEOS) were used to fabricate four types of devices, differing by the gate dielectric, as well as its thickness. As the Al2O3 thickness of Al2O3/TEOS oxide dielectric stacks increased, both the on-current and off-current decreased, and the transfer curves shifted to larger voltages. The lowest ∆Vth of 0.68 V and ∆S.S. of −0.03 V/decade from hysteresis characteristics indicate that the increase of interface traps and charge trapping between the IGZO channel and gate dielectrics is effectively inhibited by using two stacked dielectrics with 10-nm thick Al2O3 and 96-nm thick TEOS oxide. The lowest ∆Vth and ∆S.S. values of a-IGZO TFTs with 10-nm thick Al2O3 and 96-nm thick TEOS oxide gate dielectrics according to the PBS and NBS tests were shown to have the best electrical stability in comparison to those with the Al2O3 or TEOS oxide single-layer dielectrics.

Structural and electrical characteristics of high-κ ErTixOy gate dielectrics on InGaZnO thin-film transistors

2013 ◽  
Vol 539 ◽  
pp. 251-255 ◽  
Author(s):  
Fa-Hsyang Chen ◽  
Jim-Long Her ◽  
Yu-Hsuan Shao ◽  
Wei-Chen Li ◽  
Yasuhiro H. Matsuda ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Dielectrics ◽  
Electrical Characteristics
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