Influence of The Dielectric on The Growth and Performance of Pentacene Thin Film Transistors

2001 ◽  
Vol 708 ◽  
Author(s):  
D. Knipp ◽  
R. A. Street ◽  
B. Krusor ◽  
J. Ho ◽  
R. B. Apte
Keyword(s):  
Thin Film ◽  
Transport Properties ◽  
Structural Properties ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Clear Correlation ◽  
Force Microscopy ◽  
Atomic Force ◽  
And Performance ◽  
Device Properties

ABSTRACTThe electronic transport and the device properties of pentacene thin film transistors are reported, showing the influence of the dielectric on the structural and transport properties. The structure and morphology of pentacene films on organic and inorganic dielectrics were compared by x-ray diffraction measurements and atomic force microscopy. For the investigated dielectrics we observed a clear correlation between the morphology and the structural properties of the highly polycrystalline films. In the case of inorganic dielectrics the roughness of the dielectric has a distinct influence on the morphology and the structural properties, whereas the films on organic dielectrics bonding between pentacene and the dielectric may have an influence on the growth mechanism. We find that careful control of the deposition conditions give films with similar transport properties on organic and inorganic dielectrics. To study the electronic properties we have realized inverted staggered transistors. The TFTs exhibit mobilities of ∼0.4 cm2/Vs and on/off ratios of 108 on organic and inorganic dielectrics. The influence of the dielectric on the device mobility, threshold voltage and sub-threshold voltage slope are discussed.

scholarly journals Optimizing Pentacene Growth in Low-Voltage Organic Thin-Film Transistors Prepared by Dry Fabrication Techniques

2012 ◽  
Vol 1435 ◽  
Author(s):  
S. Gupta ◽  
K. C. Chinnam ◽  
M. Zelzer ◽  
R. Ulijn ◽  
H. Gleskova
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Evaporation Rate ◽  
Low Voltage ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Transistor Channel ◽  
Force Microscopy ◽  
Atomic Force

ABSTRACTWe have studied the effect of pentacene purity and evaporation rate on low-voltage organic thin-film transistors (OTFTs) prepared solely by dry fabrication techniques. The maximum field-effect mobility of 0.07 cm2/Vs was achieved for the highest pentacene evaporation rate of 0.32 Å/s and four-time purified pentacene. Four-time purified pentacene also led to the lowest threshold voltage of -1.1 V and inverse subthreshold slope of ∼100 mV/decade. In addition, pentacene surface was imaged using atomic force microscopy, and the transistor channel and contact resistances for various pentacene evaporation rates were extracted and compared to field-effect mobilities.

High performances and low variability of semiconducting-SWCNT thin-film-transistors achieved by shortening tube lengths

2014 ◽  
Vol 1586 ◽  
Author(s):  
Takeshi Saito ◽  
Shigekazu Ohmori ◽  
Kazuki Ihara ◽  
Yuki Kuwahara ◽  
Fumiyuki Nihey
Keyword(s):  
Thin Film ◽  
Atomic Force Microscopy ◽  
Thin Film Transistors ◽  
Length Distribution ◽  
Sodium Cholate ◽  
Tube Length ◽  
Ionic Surfactant ◽  
Layer Formation ◽  
Force Microscopy ◽  
Atomic Force

ABSTRACTThe tube-length distribution in the semiconducting single-wall carbon nanotube (s-SWCNT) ink extracted by the electric-field-induced layer formation (ELF) method was characterized by atomic force microscopy, which revealed that the nonionic surfactant Brij 700 adopted in ELF causes the significant and homogeneous shortening of SWCNTs compared with sodium cholate that is frequently used for the dispersion of SWCNTs as an ionic surfactant. It was found that the shortened s-SWCNTs in the semiconducting ink positively effect on the uniformity of performance among the s-SWCNT thin-film transistors.

On the Threshold Voltage and Performance of ZnO-Based Thin-Film Transistors with a ZrO2 Gate Dielectric

2020 ◽  
Vol 49 (5) ◽  
pp. 3156-3164 ◽  
Author(s):  
Kavindra Kandpal ◽  
Navneet Gupta ◽  
Jitendra Singh ◽  
Chandra Shekhar
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
And Performance

Cyanophenoxy-Substituted Silicon Phthalocyanines for Low Threshold Voltage n-Type Organic Thin-Film Transistors

2021 ◽  
Author(s):  
Benjamin King ◽  
Andrew J. Daszczynski ◽  
Nicole A. Rice ◽  
Alexander J. Peltekoff ◽  
Nathan J. Yutronkie ◽  
...  
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Silicon Phthalocyanines ◽  
Low Threshold

scholarly journals Analysis of Threshold Voltage Shift for Full VGS/VDS/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 327
Author(s):  
Je-Hyuk Kim ◽  
Jun Tae Jang ◽  
Jong-Ho Bae ◽  
Sung-Jin Choi ◽  
Dong Myong Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Electric Field ◽  
Oxygen Content ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Electron Trapping ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Drain Side ◽  
Bottom Gate

In this study, we analyzed the threshold voltage shift characteristics of bottom-gate amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) under a wide range of positive stress voltages. We investigated four mechanisms: electron trapping at the gate insulator layer by a vertical electric field, electron trapping at the drain-side GI layer by hot-carrier injection, hole trapping at the source-side etch-stop layer by impact ionization, and donor-like state creation in the drain-side IGZO layer by a lateral electric field. To accurately analyze each mechanism, the local threshold voltages of the source and drain sides were measured by forward and reverse read-out. By using contour maps of the threshold voltage shift, we investigated which mechanism was dominant in various gate and drain stress voltage pairs. In addition, we investigated the effect of the oxygen content of the IGZO layer on the positive stress-induced threshold voltage shift. For oxygen-rich devices and oxygen-poor devices, the threshold voltage shift as well as the change in the density of states were analyzed.

Threshold voltage of excimer-laser-annealed polycrystalline silicon thin-film transistors

2000 ◽  
Vol 76 (17) ◽  
pp. 2442-2444 ◽  
Author(s):  
C. T. Angelis ◽  
C. A. Dimitriadis ◽  
F. V. Farmakis ◽  
J. Brini ◽  
G. Kamarinos ◽  
...  
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Silicon Thin Film
Sign in / Sign up

Export Citation Format

Share Document