Epitaxial growth of SrTiO3 thin film on Si by laser molecular beam epitaxy

2007 ◽  
Vol 90 (1) ◽  
pp. 012902 ◽  
Author(s):  
X. Y. Zhou ◽  
J. Miao ◽  
J. Y. Dai ◽  
H. L. W. Chan ◽  
C. L. Choy ◽  
...  
Keyword(s):  
Thin Film ◽  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Laser Molecular Beam Epitaxy

scholarly journals Epitaxial growth of high quality TiN thin film on Si by laser molecular beam epitaxy

2008 ◽  
Vol 57 (2) ◽  
pp. 1236
Author(s):  
He Meng ◽  
Liu Guo-Zhen ◽  
Qiu Jie ◽  
Xing Jie ◽  
Lü Hui-Bin
Keyword(s):  
Thin Film ◽  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
High Quality ◽  
Laser Molecular Beam Epitaxy

Photovoltaic effect of ferroelectric Pb(Zr0.52,Ti0.48)O3 deposited on SrTiO3 buffered n-GaAs by laser molecular beam epitaxy

2017 ◽  
Vol 10 (04) ◽  
pp. 1750036 ◽  
Author(s):  
Yunxia Zhou ◽  
Jun Zhu ◽  
Xingpeng Liu ◽  
Zhipeng Wu
Keyword(s):  
Thin Film ◽  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Lattice Mismatch ◽  
Photovoltaic Effect ◽  
Short Circuit ◽  
High Energy ◽  
Text Type ◽  
Laser Molecular Beam Epitaxy

Ferroelectric Pb(Zr[Formula: see text],Ti[Formula: see text]O3(PZT) thin film was grown on [Formula: see text]-type GaAs (001) substrate with SrTiO3 (STO) buffer layer by laser molecular beam epitaxy (L-MBE). The epitaxial process of the STO was in situ monitored by reflection high-energy electron diffraction (RHEED). The crystallographical growth orientation relationship was revealed to be (002) [Formula: see text] PZT//(002) [Formula: see text] STO//(001) [Formula: see text] GaAs by RHEED and X-ray diffraction (XRD). It was found that a small lattice mismatch between PZT and GaAs with a 45[Formula: see text] in-plane rotation relationship can be formed by inserting of a buffer layer STO. Besides, the enhanced electrical properties of the heterostructure were obtained with the short-circuit photocurrent increased to 52[Formula: see text]mA/cm2 and the better power conversation efficiency increased by 20% under AM1.5[Formula: see text]G (100[Formula: see text]mW/cm[Formula: see text] illumination. The work could provide a way for the application of this kind of heterostructure with high photocurrent response in optoelectronic thin film devices.

Epitaxial Growth of C60 Thin Films using Continuous-wave Laser Molecular Beam Epitaxy

2006 ◽  
Vol 965 ◽  
Author(s):  
Seiichiro Yaginuma ◽  
Kenji Itaka ◽  
Masamitsu Haemori ◽  
Masao Katayama ◽  
Yuji Matsumoto ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Continuous Wave ◽  
High Energy ◽  
Imaging Plate ◽  
Continuous Wave Laser ◽  
Laser Molecular Beam Epitaxy ◽  
Wave Laser

ABSTRACTWe have fabricated C60 thin films on various substrates (mica, MoS2, HOPG, LiF, NaCl, KBr, KCl and CaF2) by using continuous-wave laser molecular beam epitaxy (CWL-MBE), which is very suitable technique to grow epitaxial organic thin films because of good controllability of evaporation as compared with Knudsen-cell method. The films were evaluated by reflection high-energy electron diffraction with micro channel imaging plate (MCP-RHEED) and atomic force microscopy (AFM). AFM images of the C60 films on mica, MoS2 and HOPG substrates show flat and homogeneous, morphology, and epitaxial growth of the films on mica and MoS2 substrates were observed by RHEED. This result shows mica, MoS2, HOPG substrates are good candidates for epitaxial growth of C60 thin films.

scholarly journals Epitaxial growth and characterization of CuGa2O4 films by laser molecular beam epitaxy

AIP Advances ◽  
2017 ◽  
Vol 7 (11) ◽  
pp. 115216 ◽  
Author(s):  
Hongling Wei ◽  
Zhengwei Chen ◽  
Zhenping Wu ◽  
Wei Cui ◽  
Yuanqi Huang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Laser Molecular Beam Epitaxy
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