Electrical properties of ferroelectric BaTiO3 thin film on SrTiO3 buffered GaAs by laser molecular beam epitaxy

2009 ◽  
Vol 94 (3) ◽  
pp. 032905 ◽  
Author(s):  
W. Huang ◽  
Z. P. Wu ◽  
J. H. Hao
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Laser Molecular Beam Epitaxy ◽  
Batio3 Thin Film

Photovoltaic effect of ferroelectric Pb(Zr0.52,Ti0.48)O3 deposited on SrTiO3 buffered n-GaAs by laser molecular beam epitaxy

2017 ◽  
Vol 10 (04) ◽  
pp. 1750036 ◽  
Author(s):  
Yunxia Zhou ◽  
Jun Zhu ◽  
Xingpeng Liu ◽  
Zhipeng Wu
Keyword(s):  
Thin Film ◽  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Lattice Mismatch ◽  
Photovoltaic Effect ◽  
Short Circuit ◽  
High Energy ◽  
Text Type ◽  
Laser Molecular Beam Epitaxy

Ferroelectric Pb(Zr[Formula: see text],Ti[Formula: see text]O3(PZT) thin film was grown on [Formula: see text]-type GaAs (001) substrate with SrTiO3 (STO) buffer layer by laser molecular beam epitaxy (L-MBE). The epitaxial process of the STO was in situ monitored by reflection high-energy electron diffraction (RHEED). The crystallographical growth orientation relationship was revealed to be (002) [Formula: see text] PZT//(002) [Formula: see text] STO//(001) [Formula: see text] GaAs by RHEED and X-ray diffraction (XRD). It was found that a small lattice mismatch between PZT and GaAs with a 45[Formula: see text] in-plane rotation relationship can be formed by inserting of a buffer layer STO. Besides, the enhanced electrical properties of the heterostructure were obtained with the short-circuit photocurrent increased to 52[Formula: see text]mA/cm2 and the better power conversation efficiency increased by 20% under AM1.5[Formula: see text]G (100[Formula: see text]mW/cm[Formula: see text] illumination. The work could provide a way for the application of this kind of heterostructure with high photocurrent response in optoelectronic thin film devices.

Electrical properties of SrVO3/SrTiO3 superlattices grown by laser molecular beam epitaxy

2000 ◽  
Vol 114 (9) ◽  
pp. 473-476 ◽  
Author(s):  
D.H Kim ◽  
D.-W Kim ◽  
B.S Kang ◽  
T.W Noh ◽  
D.R Lee ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Laser Molecular Beam Epitaxy

Characterization of Cu2O Thin Film Grown by Molecular Beam Epitaxy

2013 ◽  
Vol 582 ◽  
pp. 157-160 ◽  
Author(s):  
Takumi Oshima ◽  
Masaya Nohara ◽  
Takuya Hoshina ◽  
Hiroaki Takeda ◽  
Takaaki Tsurumi
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Deposition Rate ◽  
Crystal Orientation ◽  
Molecular Beam ◽  
Good Crystallinity ◽  
Relationship Of

We report the growth of Cu2O thin films on glass and MgO(100) substrates by molecular beam epitaxy. Crystal orientation of Cu2O thin films on glass substrate were changed from (100) to (111) with increasing the deposition rate. The Cu2O thin films were epitaxially grown on MgO(100) substrate with an orientation relationship of Cu2O(110) // MgO(100). The film quality and electrical properties of Cu2O thin films were changed with deposition rate. The slow deposition rate resulted in high conductivity and mobility, as well as good crystallinity and orientation.

Epitaxial growth of SrTiO3 thin film on Si by laser molecular beam epitaxy

2007 ◽  
Vol 90 (1) ◽  
pp. 012902 ◽  
Author(s):  
X. Y. Zhou ◽  
J. Miao ◽  
J. Y. Dai ◽  
H. L. W. Chan ◽  
C. L. Choy ◽  
...  
Keyword(s):  
Thin Film ◽  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Laser Molecular Beam Epitaxy
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