scholarly journals Epitaxial growth and characterization of CuGa2O4 films by laser molecular beam epitaxy

AIP Advances ◽  
2017 ◽  
Vol 7 (11) ◽  
pp. 115216 ◽  
Author(s):  
Hongling Wei ◽  
Zhengwei Chen ◽  
Zhenping Wu ◽  
Wei Cui ◽  
Yuanqi Huang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Laser Molecular Beam Epitaxy

Epitaxial Growth and Characterization of the Ordered Vacancy Compound CuIn3Se5 on GaAs (100) Fabricated by Molecular Beam Epitaxy

1994 ◽  
Vol 340 ◽  
Author(s):  
Art J. Nelson ◽  
M. Bode ◽  
G. Horner ◽  
K. Sinha ◽  
John Moreland
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Structural Defects ◽  
X Ray Diffraction ◽  
Symmetric Vibration ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

ABSTRACTEpitaxial growth of the ordered vacancy compound (OVC) CuIn3Se5 has been achieved on GaAs (100) by molecular beam epitaxy (MBE) from Cu2Se and In2Se3 sources. Electron probe microanalysis and X-ray diffraction have confirmed the composition for the 1-3-5 OVC phase and that the film is single crystal Culn3Se5 (100). Transmission electron microscopy (TEM) characterization of the material also showed it to be single crystalline. Structural defects in the layer consisted mainly of stacking faults. Photoluminescence (PL) measurements performed at 7.5 K indicate that the bandgap is 1.28 eV. Raman spectra reveal a strong polarized peak at 152 cm−1, which is believed to arise from the totally symmetric vibration of the Se atoms in the lattice. Atomic force microscopy reveals faceting in a preferred (100) orientation.

Controlled Growth and Characterization of Non-tapered InN Nanowires on Si(111) Substrates by Molecular Beam Epitaxy

2009 ◽  
Vol 1178 ◽  
Author(s):  
Yi-Lu Chang ◽  
Arya Fatehi ◽  
Feng Li ◽  
Zetian Mi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Room Temperature ◽  
Molecular Beam ◽  
Stacking Faults ◽  
Seeding Layer ◽  
Mbe Growth ◽  
Molecular Beam Epitaxial

AbstractWe have performed a detailed investigation of the molecular beam epitaxial (MBE) growth and characterization of InN nanowires spontaneously formed on Si(111) substrates under nitrogen rich conditions. Controlled epitaxial growth of InN nanowires (NWs) has been demonstrated by using an in situ deposited thin (˜ 0.5 nm) In seeding layer prior to the initiation of growth. By applying this technique, we have achieved non-tapered epitaxial InN NWs that are relatively free of dislocations and stacking faults. Such InN NW ensembles display strong photoluminescence (PL) at room temperature and considerably reduced spectral broadening, with very narrow spectral linewidths of 22 and 40 meV at 77 K and 300 K, respectively.

Epitaxial growth and characterization of high-quality aluminum films on sapphire substrates by molecular beam epitaxy

CrystEngComm ◽  
2014 ◽  
Vol 16 (33) ◽  
pp. 7626-7632 ◽  
Author(s):  
Wenliang Wang ◽  
Weijia Yang ◽  
Zuolian Liu ◽  
Yunhao Lin ◽  
Shizhong Zhou ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Epitaxial Films ◽  
High Quality ◽  
Aluminum Films ◽  
Sapphire Substrates

2 inch high-quality Al epitaxial films with sharp and abrupt Al/Al2O3 interfaces have been grown on sapphire substrates by molecular beam epitaxy with an in-plane alignment of Al[11̄0]/Al2O3[11̄00].

Epitaxial Growth of C60 Thin Films using Continuous-wave Laser Molecular Beam Epitaxy

2006 ◽  
Vol 965 ◽  
Author(s):  
Seiichiro Yaginuma ◽  
Kenji Itaka ◽  
Masamitsu Haemori ◽  
Masao Katayama ◽  
Yuji Matsumoto ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Continuous Wave ◽  
High Energy ◽  
Imaging Plate ◽  
Continuous Wave Laser ◽  
Laser Molecular Beam Epitaxy ◽  
Wave Laser

ABSTRACTWe have fabricated C60 thin films on various substrates (mica, MoS2, HOPG, LiF, NaCl, KBr, KCl and CaF2) by using continuous-wave laser molecular beam epitaxy (CWL-MBE), which is very suitable technique to grow epitaxial organic thin films because of good controllability of evaporation as compared with Knudsen-cell method. The films were evaluated by reflection high-energy electron diffraction with micro channel imaging plate (MCP-RHEED) and atomic force microscopy (AFM). AFM images of the C60 films on mica, MoS2 and HOPG substrates show flat and homogeneous, morphology, and epitaxial growth of the films on mica and MoS2 substrates were observed by RHEED. This result shows mica, MoS2, HOPG substrates are good candidates for epitaxial growth of C60 thin films.

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