Interface control and modification of band alignment and electrical properties of HfTiO/GaAs gate stacks by nitrogen incorporation

2014 ◽  
Vol 2 (27) ◽  
pp. 5299-5308 ◽  
Author(s):  
Gang He ◽  
Jiangwei Liu ◽  
Hanshuang Chen ◽  
Yanmei Liu ◽  
Zhaoqi Sun ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Gate Dielectrics ◽  
Band Alignment ◽  
Photoemission Spectroscopy ◽  
Gate Stacks ◽  
Electrical Measurements ◽  
Interface Control ◽  
Nitrogen Incorporation ◽  
Gaas Substrates ◽  
Optical Dielectric

Effects of nitrogen incorporation on the interface chemical bonding states, optical dielectric function, band alignment, and electrical properties of sputtering-derived HfTiO high-kgate dielectrics on GaAs substrates have been studied by angle resolved X-ray photoemission spectroscopy (ARXPS), spectroscopy ellipsometry (SE), and electrical measurements.

Low temperature nitrogen incorporation method for enhanced electrical properties in hafnia based gate dielectrics

2006 ◽  
Vol 89 (24) ◽  
pp. 242902 ◽  
Author(s):  
K. Ramani ◽  
C. R. Essary ◽  
S. Y. Son ◽  
V. Craciun ◽  
R. K. Singh
Keyword(s):  
Electrical Properties ◽  
Low Temperature ◽  
Gate Dielectrics ◽  
Nitrogen Incorporation ◽  
Incorporation Method

Composition dependent interfacial thermal stability, band alignment and electrical properties of Hf1−xTixO2/Si gate stacks

2015 ◽  
Vol 346 ◽  
pp. 489-496 ◽  
Author(s):  
J.W. Zhang ◽  
G. He ◽  
M. Liu ◽  
H.S. Chen ◽  
Y.M. Liu ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Electrical Properties ◽  
Band Alignment ◽  
Gate Stacks
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