Down to 2 nm Ultra Shallow Junctions : Fabrication by IBS Plasma Immersion Ion Implantation Prototype PULSION®

2006 ◽  
Author(s):  
Frank Torregrosa ◽  
Hasnaa Etienne ◽  
Gilles Mathieu ◽  
Laurent Roux
Keyword(s):  
Ion Implantation ◽  
Shallow Junctions ◽  
Plasma Immersion Ion Implantation ◽  
Ultra Shallow Junctions

Laser activation of Ultra Shallow Junctions (USJ) doped by Plasma Immersion Ion Implantation (PIII)

2009 ◽  
Vol 255 (10) ◽  
pp. 5647-5650 ◽  
Author(s):  
Vanessa Vervisch ◽  
Yannick Larmande ◽  
Philippe Delaporte ◽  
Thierry Sarnet ◽  
Marc Sentis ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Shallow Junctions ◽  
Plasma Immersion Ion Implantation ◽  
Ultra Shallow Junctions

Optimization of a plasma immersion ion implantation process for shallow junctions in silicon

2014 ◽  
Vol 32 (6) ◽  
pp. 061302 ◽  
Author(s):  
Ashok Ray ◽  
Rajashree Nori ◽  
Piyush Bhatt ◽  
Saurabh Lodha ◽  
Richard Pinto ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Shallow Junctions ◽  
Implantation Process ◽  
Plasma Immersion Ion Implantation

Plasma immersion ion implantation for shallow junctions in silicon

1999 ◽  
Vol 138-139 ◽  
pp. 224-227 ◽  
Author(s):  
I Pintér ◽  
A.H Abdulhadi ◽  
Zs Makaró ◽  
N.Q Khanh ◽  
M Ádám ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Shallow Junctions ◽  
Plasma Immersion Ion Implantation

Peculiarities of the Impurity Redistribution under Ultra-Shallow Junction Formation in Silicon

2013 ◽  
Vol 854 ◽  
pp. 141-145
Author(s):  
V.G. Litovchenko ◽  
B. Romanyuk ◽  
O. Oberemok ◽  
V. Popov ◽  
V. Melnik ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Low Energy ◽  
Furnace Annealing ◽  
Marker Layer ◽  
Silicon Bulk ◽  
Junction Formation ◽  
Shallow Junctions ◽  
O Isotope ◽  
Ultra Shallow Junctions ◽  
Effect Of Oxygen

Ultra-shallow junctions (USJs) were formed by low-energy As ion implantation with the subsequent furnace annealing. It was found that the significant amount of oxygen is redistributed from the silicon bulk to the arsenic-implanted region. We present the effect of oxygen gettering at the creation of arsenic-doped USJs using the marker layer created by ion implantation of 18O isotope.

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