Optimization of a plasma immersion ion implantation process for shallow junctions in silicon

2014 ◽  
Vol 32 (6) ◽  
pp. 061302 ◽  
Author(s):  
Ashok Ray ◽  
Rajashree Nori ◽  
Piyush Bhatt ◽  
Saurabh Lodha ◽  
Richard Pinto ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Shallow Junctions ◽  
Implantation Process ◽  
Plasma Immersion Ion Implantation

Plasma immersion ion implantation for shallow junctions in silicon

1999 ◽  
Vol 138-139 ◽  
pp. 224-227 ◽  
Author(s):  
I Pintér ◽  
A.H Abdulhadi ◽  
Zs Makaró ◽  
N.Q Khanh ◽  
M Ádám ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Shallow Junctions ◽  
Plasma Immersion Ion Implantation

FDTD study of the effects of the doubly ionized ions on the plasma immersion ion implantation process

2014 ◽  
Vol 80 (2) ◽  
pp. 215-223
Author(s):  
M. Sharifian ◽  
Y. Sadeghi
Keyword(s):  
Ion Implantation ◽  
Plasma Polymerization ◽  
Potential Distribution ◽  
Density Ratio ◽  
Plasma Sheath ◽  
Sheath Region ◽  
Implantation Process ◽  
Plasma Immersion Ion Implantation

AbstractThe plasma sheath dynamics adjacent to the cathode in the presence of electrons, ions, and doubly ionized ions have been simulated in this work. The aim of the present investigation is, therefore, to study the effect of the doubly ionized ions on the characteristics of the plasma sheath dynamics such as potential distribution, sheath length, and ions dose and velocity near the surface (cathode). It was shown that the presence of the doubly ionized ions can increase the normalized potential of all positions in sheath region, sheath length, and ion/doubly ionized ions density ratio on the target. Obtained results may be helpful for analyzing the practical results of the surface operations such as ion implantation and plasma polymerization, etc.

scholarly journals Planar betavoltaic converter creation with plasma-immersion ion implantation process*

2016 ◽  
Vol 122 ◽  
pp. 012029 ◽  
Author(s):  
K V Rudenko ◽  
A V Miakonkih ◽  
A E Rogojin ◽  
S V Bogdanov ◽  
V G Sidorov ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Implantation Process ◽  
Plasma Immersion Ion Implantation

Plasma immersion ion implantation characteristics with q-nonextensive electron velocity distribution

2015 ◽  
Vol 81 (3) ◽  
Author(s):  
N. Navab Safa ◽  
H. Ghomi ◽  
A. R. Niknam
Keyword(s):  
Distribution Function ◽  
Ion Implantation ◽  
Fluid Model ◽  
Electron Distribution Function ◽  
Implantation Dose ◽  
Electron Velocity ◽  
Plasma Parameters ◽  
Electron Velocity Distribution ◽  
Implantation Process ◽  
Plasma Immersion Ion Implantation

The plasma immersion ion implantation process is investigated in the presence ofq–nonextensive electrons by using a one-dimensional fluid model. The effect of the nonextensivity parameter,q, on the plasma parameters and sheath dynamics during the implantation process is studied. The results show that the implantation dose can be enhanced in the presence of energetic electrons at the tail of the distribution function. Different parameters of plasma such as sheath thickness, ion velocity and ion density show more change at the larger values of theq–parameter. Furthermore, the results of simulation tend to what is predicted by the Maxwellian electron distribution function (q= 1).

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