Extended Abstracts of the Fifth International Workshop on Junction Technology
Latest Publications

TOTAL DOCUMENTS

(FIVE YEARS 0)

H-INDEX

(FIVE YEARS 0)

Published By IEEE

4990215869

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Charging phenomena of the medium dose implantation by a carbonization of the surface layer of the photo-resist

Extended Abstracts of the Fifth International Workshop on Junction Technology ◽

10.1109/iwjt.2005.203883 ◽

2005 ◽

Author(s):

H. Kamiyanagi ◽

S. Shibata

Keyword(s):

Surface Layer ◽

Medium Dose

Download Full-text

Which junction for advanced CMOS?-theory, benchmark and predictions

Extended Abstracts of the Fifth International Workshop on Junction Technology ◽

10.1109/iwjt.2005.203865 ◽

2005 ◽

Cited By ~ 1

Author(s):

T. Skotnicki

Download Full-text

Improved short-channel n-FET performance with virtual extensions

Extended Abstracts of the Fifth International Workshop on Junction Technology ◽

10.1109/iwjt.2005.203896 ◽

2005 ◽

Author(s):

D. Connelly ◽

C. Faulkner ◽

P.A. Clifton ◽

D.E. Grupp

Keyword(s):

Short Channel

Download Full-text

Anomalous doping profile in heavily doped Ge

Extended Abstracts of the Fifth International Workshop on Junction Technology ◽

10.1109/iwjt.2005.203875 ◽

2005 ◽

Author(s):

K. Hosawa ◽

K. Matsumoto ◽

K. Shibahara

Keyword(s):

Doping Profile ◽

Heavily Doped

Download Full-text

Hydrogen effect on ultra-shallow arsenic n/sup +//p junction formed by AsH/sub 3/ plasma doping (PLAD)

Extended Abstracts of the Fifth International Workshop on Junction Technology ◽

10.1109/iwjt.2005.203884 ◽

2005 ◽

Author(s):

Sungho Heo ◽

Sungkweon Baek ◽

Dongkyu Lee ◽

Gyongho Buh ◽

Yugyun Sin ◽

...

Keyword(s):

Hydrogen Effect ◽

Plasma Doping

Download Full-text

Advantages of B/sub 18/H/sub 22/ ion implantation and influence on PMOS reliability

Extended Abstracts of the Fifth International Workshop on Junction Technology ◽

10.1109/iwjt.2005.203872 ◽

2005 ◽

Author(s):

M. Ishibashi ◽

Y. Kawasaki ◽

K. Horita ◽

T. Kuroi ◽

T. Yamashita ◽

...

Keyword(s):

Ion Implantation

Download Full-text

Minimization of pattern dependence by optimized flash lamp annealing

Extended Abstracts of the Fifth International Workshop on Junction Technology ◽

10.1109/iwjt.2005.203882 ◽

2005 ◽

Cited By ~ 3

Author(s):

T. Ito ◽

K. Matsuo ◽

H. Itokawa ◽

T. Itani ◽

N. Tarnaoki ◽

...

Keyword(s):

Flash Lamp

Download Full-text

A new junction technology for low-resistance contacts and Schottky barrier MOSFETs

Extended Abstracts of the Fifth International Workshop on Junction Technology ◽

10.1109/iwjt.2005.203895 ◽

2005 ◽

Author(s):

D.E. Grupp ◽

D. Connelly ◽

C. Faulkner ◽

P.A. Clifton

Keyword(s):

Schottky Barrier ◽

Low Resistance

Download Full-text

Decaborane ion implantation for sub-40-nm gate-length PMOSFETs to enable formation of steep ultra-shallow junction and small threshold voltage fluctuation

Extended Abstracts of the Fifth International Workshop on Junction Technology ◽

10.1109/iwjt.2005.203871 ◽

2005 ◽

Cited By ~ 2

Author(s):

T. Aoyama ◽

M. Fukuda ◽

Y. Nara ◽

S. Umisedo ◽

N. Hamamoto ◽

...

Keyword(s):

Ion Implantation ◽

Threshold Voltage ◽

Gate Length ◽

Voltage Fluctuation ◽

Shallow Junction

Download Full-text

Source/drain resistance modeling in bulk and ultra-thin body SOI MOSFETs

Extended Abstracts of the Fifth International Workshop on Junction Technology ◽

10.1109/iwjt.2005.203894 ◽

2005 ◽

Author(s):

S.-D. Kim ◽

J. Yuan ◽

J.C.S. Woo

Keyword(s):

Thin Body ◽

Resistance Modeling

Download Full-text

Extended Abstracts of the Fifth International Workshop on Junction TechnologyLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Charging phenomena of the medium dose implantation by a carbonization of the surface layer of the photo-resist

Which junction for advanced CMOS?-theory, benchmark and predictions

Improved short-channel n-FET performance with virtual extensions

Anomalous doping profile in heavily doped Ge

Hydrogen effect on ultra-shallow arsenic n/sup +//p junction formed by AsH/sub 3/ plasma doping (PLAD)

Advantages of B/sub 18/H/sub 22/ ion implantation and influence on PMOS reliability

Minimization of pattern dependence by optimized flash lamp annealing

A new junction technology for low-resistance contacts and Schottky barrier MOSFETs

Decaborane ion implantation for sub-40-nm gate-length PMOSFETs to enable formation of steep ultra-shallow junction and small threshold voltage fluctuation

Source/drain resistance modeling in bulk and ultra-thin body SOI MOSFETs

Extended Abstracts of the Fifth International Workshop on Junction Technology
Latest Publications