Charge exchange cross sections relevant to ion implantation for ultra shallow junctions

2003 ◽  
Author(s):  
J.A. Van Den Berg ◽  
G. Wostenholm ◽  
M. Geryk ◽  
D.G. Armour ◽  
C.E.A. Cook ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Charge Exchange ◽  
Cross Sections ◽  
Shallow Junctions ◽  
Ultra Shallow Junctions

Peculiarities of the Impurity Redistribution under Ultra-Shallow Junction Formation in Silicon

2013 ◽  
Vol 854 ◽  
pp. 141-145
Author(s):  
V.G. Litovchenko ◽  
B. Romanyuk ◽  
O. Oberemok ◽  
V. Popov ◽  
V. Melnik ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Low Energy ◽  
Furnace Annealing ◽  
Marker Layer ◽  
Silicon Bulk ◽  
Junction Formation ◽  
Shallow Junctions ◽  
O Isotope ◽  
Ultra Shallow Junctions ◽  
Effect Of Oxygen

Ultra-shallow junctions (USJs) were formed by low-energy As ion implantation with the subsequent furnace annealing. It was found that the significant amount of oxygen is redistributed from the silicon bulk to the arsenic-implanted region. We present the effect of oxygen gettering at the creation of arsenic-doped USJs using the marker layer created by ion implantation of 18O isotope.

Laser activation of Ultra Shallow Junctions (USJ) doped by Plasma Immersion Ion Implantation (PIII)

2009 ◽  
Vol 255 (10) ◽  
pp. 5647-5650 ◽  
Author(s):  
Vanessa Vervisch ◽  
Yannick Larmande ◽  
Philippe Delaporte ◽  
Thierry Sarnet ◽  
Marc Sentis ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Shallow Junctions ◽  
Plasma Immersion Ion Implantation ◽  
Ultra Shallow Junctions

Charge exchange reactions on medium and heavy mass targets at intermediate energies

2019 ◽  
Vol 35 (08) ◽  
pp. 2050045
Author(s):  
Pardeep Singh ◽  
Monika Singh ◽  
Neha Rani
Keyword(s):  
Charge Exchange ◽  
Cross Sections ◽  
Energy Charge ◽  
Impulse Approximation ◽  
Mass Region ◽  
Intermediate Energy ◽  
Exchange Reactions ◽  
Plane Wave Impulse Approximation ◽  
Text Type ◽  
Intermediate Energies

The nuclear isotopic structure can be understood easily via the intermediate-energy charge exchange reactions of (p, n) and [Formula: see text]He, [Formula: see text] type. In the current contribution, we present some results for charge exchange reactions induced by 3He on targets lying in mass region [Formula: see text] within the theoretical framework of plane wave impulse approximation (PWIA) and distorted wave impulse approximation (DWIA). Here, the recoil effects in PWIA have also been considered. Particularly, the angular distributions and the unit cross-sections have been calculated and compared with the available data. Further, the importance of inclusion of the exchange contribution in these reactions is also considered, which eventually enhance the matching with data.

State-to-state charge exchange cross sections in high-velocity asymmetric and near-symmetric collisions of 400 MeV Fe26+ions

1983 ◽  
Vol 16 (21) ◽  
pp. 3993-4003 ◽  
Author(s):  
A Chetioui ◽  
K Wohrer ◽  
J P Rozet ◽  
A Jolly ◽  
C Stephan ◽  
...  
Keyword(s):  
Charge Exchange ◽  
Cross Sections ◽  
High Velocity ◽  
State Charge

Partial charge exchange and excitation cross sections for C3+ + H collisions

1991 ◽  
Vol 21 (S1) ◽  
pp. S245-S246
Author(s):  
L. F. Errea ◽  
B. Herrero ◽  
L. M�ndez ◽  
O. M� ◽  
A. Riera
Keyword(s):  
Charge Exchange ◽  
Cross Sections ◽  
Partial Charge ◽  
Excitation Cross Sections

A Model to Explain the Variations of “End-of-Range” Defect Densities with Ion Implantation Parameters

1992 ◽  
Vol 279 ◽  
Author(s):  
L. Laanab ◽  
C. Bergaud ◽  
M. M. Faye ◽  
J. Faure ◽  
A. Martinez ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Computer Simulations ◽  
Point Defects ◽  
Numerical Optimization ◽  
Experimental Investigations ◽  
Shallow Junctions ◽  
Quantitative Explanation ◽  
Defect Densities

ABSTRACTComputer simulations in conjunction with TEM experiments have been used to test the different models usually adopted in the literature to explain the formation of “End Of Range”(EOR) defects which appear after annealing of preamorphized silicon layers. Only one survives careful experimental investigations involving Si+, Ge+, Sn+ amorphization at RT and LNT. The “excess-interstitial” model appears relevant at least for a semi-quantitative explanation of the source of point-defects which after recombination and agglomeration, lead to the formation of these defects. This model may be used for the numerical optimization of conditions for the production of high performances ullra-shallow junctions.

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