Impedance and Microwave Reflectivity Measurements on n‐Si in 1M LiCl / Methanol: I . Depletion and Inversion Layer Formation

1995 ◽  
Vol 142 (8) ◽  
pp. 2665-2669 ◽  
Author(s):  
G. Schlichthörl ◽  
L. M. Peter
Keyword(s):  
Inversion Layer ◽  
Layer Formation ◽  
And Inversion

Electron trapping and inversion layer formation in photoexcited metal-insulator-poly(3-hexylthiophene) capacitors

2006 ◽  
Vol 89 (18) ◽  
pp. 183512 ◽  
Author(s):  
D. M. Taylor ◽  
J. A. Drysdale ◽  
I. Torres ◽  
O. Fernández
Keyword(s):  
Inversion Layer ◽  
Electron Trapping ◽  
Layer Formation ◽  
Metal Insulator ◽  
And Inversion

scholarly journals Sudden narrow temperature-inversion-layer formation in ALOHA-93 as a critical-layer-interaction phenomenon

1998 ◽  
Vol 103 (D6) ◽  
pp. 6323-6332 ◽  
Author(s):  
T. Y. Huang ◽  
H. Hur ◽  
T. F. Tuan ◽  
X. Li ◽  
E. M. Dewan ◽  
...  
Keyword(s):  
Inversion Layer ◽  
Temperature Inversion ◽  
Critical Layer ◽  
Layer Formation ◽  
Layer Interaction ◽  
Interaction Phenomenon

Modeling of Quantum Dot Channel (QDC) Si FETs at Sub-Kelvin for Multi-State Logic

2020 ◽  
Vol 29 (01n04) ◽  
pp. 2040017
Author(s):  
F. Jain ◽  
R. H. Gudlavalleti ◽  
R. Mays ◽  
B. Saman ◽  
J. Chandy ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Inversion Layer ◽  
Consistent Solution ◽  
Oxide Barrier ◽  
Ge Quantum Dot ◽  
And Inversion

Multi-state room temperature operation of SiOx-cladded Si quantum dots (QD) and GeOx-cladded Ge quantum dot channel (QDC) field-effect transistors (FETs) and spatial wavefunction switched (SWS)-FETs have been experimentally demonstrated. This paper presents simulation of cladded Si and Ge quantum dot channel (QDC) field-effect transistors at 4.2°K and milli-Kelvin temperatures. An array of thin oxide barrier/cladding (∼1nm) on quantum dots forms a quantum dot superlattice (QDSL). A gradual channel approximation model using potential and inversion layer charge density nQM, obtained by the self-consistent solution of the Schrodinger and Poisson’s equations, is shown to predict I-V characteristics up to milli-Kelvin temperatures. Physics-based equivalent circuit models do not work below 53°K. However, they may be improved by adapting parameters derived from quantum simulations. Low-temperature operation improves noise margins in QDC- and SWS-FET based multi-bit logic, which dissipates lower power and comprise of fewer device count. In addition, the role of self-assembled cladded QDs with transfer gate provides a novel pathway to implement qubit processing.

Inversion layer formation in organic field-effect devices

2007 ◽  
Vol 102 (5) ◽  
pp. 054514 ◽  
Author(s):  
Th. Lindner ◽  
G. Paasch
Keyword(s):  
Field Effect ◽  
Inversion Layer ◽  
Layer Formation ◽  
Field Effect Devices
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