GaAs/AlGaAs photonic integrated circuits fabricated using chemically assisted ion beam etching

The abstract should summarize the context, content and conclusions of the paper in less than 200 words. We fabricated a two-dimensional Y-branch photonic crystal waveguide in the near infrared region by using focused ion beam etching and depositing system. The light guide characters of the waveguide were measured for three different spaces between branches. Field intensity distributions of TE polarized wave in the branches were simulated by using the transfer matrix method. Both the theoretical and experimental results show that the shortest space between branches of the photonic crystal waveguide is about 1.4 times wavelength of transmitted light. If the space became shorter, the light in the two branches would couple to each other seriously. This result might be helpful for the design of compact wave demultiplexer and all-optical integrated circuits.

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Electron beam testing of multilevel metal integrated circuits

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100088464 ◽

1991 ◽

Vol 49 ◽

pp. 830-831

Author(s):

P. E. Russell ◽

Z. J. Radzimski ◽

D. A. Ricks ◽

J. P. Vitarelli

Keyword(s):

Electron Beam ◽

Integrated Circuits ◽

Focused Ion Beam ◽

Ion Beam ◽

Measurement Techniques ◽

Ion Beam Etching ◽

Voltage Contrast ◽

Modelling Effort ◽

Established Technique

Fundamentally, voltage contrast is a well established technique for determination of voltages on metal surface which can be directly probed with an electron beam. However, actual integrated circuits (IC) consist of two or more conducting layers (metal and doped polysilicon) separated by dielectrics and covered by a dielectric passivation layer. Our work has addressed: i) the removal of dielectric layers (depassivation) by reactive ion etching (RIE) or selectively by focused ion beam etching to allow access to exposed metal lines; ii) modelling effort to understand how the materials and geometric parameters of multilevel IC's affect voltage contrast measurements, and iii) improvements in retarding field spectrometer based measurement techniques.

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Turning Sample Into (Re)Solution—Focused Ion Beam Shaped Solid Immersion Lenses

ISTFA 2015: Conference Proceedings from the 41st International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2015p0071 ◽

2015 ◽

Author(s):

Philipp Scholz ◽

Michael Sadowski ◽

Christian Boit ◽

Sebastian Kupijai ◽

Marvin Henniges ◽

...

Keyword(s):

Integrated Circuits ◽

Failure Analysis ◽

Focused Ion Beam ◽

Photonic Integrated Circuits ◽

Ion Beam ◽

Signal Transmission ◽

Optical Signal ◽

Analysis Process ◽

First Case ◽

Solution Focused

Abstract This work is a unique solution for enhancing optical failure analysis and optical signal transmission. Optical failure analysis remains to be a vital part of the analysis process, despite shrinking feature sizes and challenging package technologies. The presented optical signal transmission supports the development of photonic integrated circuits. The key component is a Focused Ion Beam (FIB) process which shapes optical lenses out of the sample material leading to an improvement in lateral resolution and signal transmission. Two cases are shown that demonstrate these improvements. The first case is an optical backside analysis in a spatially confined opening of a package where other Solid Immersion Lens (SIL) systems could not be applied. It offers an improvement in spatial resolution by a factor of 2, down to a FWHM of 387 nm. The second case is a novel application for FIB shaped lenses aiming at photonic integrated circuits. This lens is created out of the isolating frontside and improves the grating coupler efficiency by a factor of 4.1.

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Echelle grating – curved wave-guide demultiplexer for photonic integrated circuits

Canadian Journal of Physics ◽

10.1139/p92-147 ◽

1992 ◽

Vol 70 (10-11) ◽

pp. 928-930

Author(s):

M. Fallahi ◽

K. A. McGreer ◽

A. Delage ◽

R. Normandin ◽

I. M. Templeton ◽

...

Keyword(s):

Integrated Circuits ◽

Focused Ion Beam ◽

Photonic Integrated Circuits ◽

Ion Beam ◽

Waveguide Structure ◽

Active Components ◽

Channel Spacing ◽

Ion Beam Lithography ◽

Echelle Grating ◽

Wave Guides

A grating spectrometer integrated with curved output wave guides was designed and fabricated in GaAs–AlGaAs waveguide structure for use in the 1 μm wavelength range. By incorporating curved wave guides, a larger separation between output facets was obtained. This is desirable for future integration. High-quality patterns were fabricated by focused ion beam lithography and reactive ion etching. Eight outputs with a channel spacing of 2 nm were obtained. The potential of the structure for integration with active components is discussed.

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Domain patterning thin crystalline ferroelectric film with focused ion beam for nonlinear photonic integrated circuits

Journal of Applied Physics ◽

10.1063/1.2374935 ◽

2006 ◽

Vol 100 (10) ◽

pp. 106103 ◽

Cited By ~ 10

Author(s):

Xijun Li ◽

Kazuya Terabe ◽

Hideki Hatano ◽

Huarong Zeng ◽

Kenji Kitamura

Keyword(s):

Integrated Circuits ◽

Focused Ion Beam ◽

Photonic Integrated Circuits ◽

Ion Beam ◽

Ferroelectric Film

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Ultrastructural Features of Normal and Diseased Hair Revealed by Ion Beam Etching and Freeze Fracture

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100115419 ◽

1975 ◽

Vol 33 ◽

pp. 358-359

Author(s):

M. Spector ◽

A. C. Brown

Keyword(s):

Electron Microscopy ◽

Scanning Electron Microscopy ◽

Ectodermal Dysplasia ◽

Ion Beam ◽

Freeze Fracture ◽

Ion Current ◽

Ion Beam Etching ◽

Pili Torti ◽

Argon Ion ◽

Scanning Electron

Ion beam etching and freeze fracture techniques were utilized in conjunction with scanning electron microscopy to study the ultrastructure of normal and diseased human hair. Topographical differences in the cuticular scale of normal and diseased hair were demonstrated in previous scanning electron microscope studies. In the present study, ion beam etching and freeze fracture techniques were utilized to reveal subsurface ultrastructural features of the cuticle and cortex.Samples of normal and diseased hair including monilethrix, pili torti, pili annulati, and hidrotic ectodermal dysplasia were cut from areas near the base of the hair. In preparation for ion beam etching, untreated hairs were mounted on conducting tape on a conducting silicon substrate. The hairs were ion beam etched by an 18 ky argon ion beam (5μA ion current) from an ETEC ion beam etching device. The ion beam was oriented perpendicular to the substrate. The specimen remained stationary in the beam for exposures of 6 to 8 minutes.

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Photonic integrated circuits

AccessScience ◽

10.1036/1097-8542.511150 ◽

2017 ◽

Keyword(s):

Integrated Circuits ◽

Photonic Integrated Circuits

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Chemical Precursors for GaAs Etching with low Energy ion Beams: Chlorine adsorption on GaAs(100)

MRS Proceedings ◽

10.1557/proc-223-215 ◽

1991 ◽

Vol 223 ◽

Cited By ~ 3

Author(s):

Richard B. Jackman ◽

Glenn C. Tyrrell ◽

Duncan Marshall ◽

Catherine L. French ◽

John S. Foord

Keyword(s):

Ion Beam ◽

Ion Beams ◽

Low Energy ◽

Ion Beam Etching ◽

Chlorine Adsorption

ABSTRACTThis paper addresses the issue of chlorine adsorption on GaAs(100) with respect to the mechanisms of thermal and ion-enhanced etching. The use of halogenated precursors eg. dichloroethane is also discussed in regard to chemically assisted ion beam etching (CAIBE).

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