Focused Ion Beam Metrology

1995 ◽  
Vol 396 ◽  
Author(s):  
A. Wagner ◽  
P. Blauner ◽  
P. Longo ◽  
S. Cohen
Keyword(s):  
Integrated Circuits ◽  
Cross Sections ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Dimensional Change ◽  
Critical Dimension ◽  
Ion Beams ◽  
Near Surface ◽  
Electron Microscopes ◽  
Scanning Electron Microscopes

AbstractFocused Ion Beams offer a new method of measuring the size of polymer resist features on integrated circuits. The short penetration range of an ion relative to an electron is shown to offer fundamental advantages for critical dimension (CD) metrology. By confining the polymer damage to the very near surface, ion beams can induce less dimensional change than scanning electron microscopes during the measurement process. This can result in improved CD measurement precision. The erosion rate of polymers to various ion species is also presented, and we show that erosion is non-linear with ion dose. The use of FIB for forming resist cross sections is also demonstrated. An H20 gas assisted etching process for polymers has been developed, and is shown to significantly improve the quality of resist cross sections.

Direct Imaging of Device Characteristics In a Focused ion Beam System

1998 ◽  
Vol 4 (S2) ◽  
pp. 652-653 ◽  
Author(s):  
A. N. Campbell ◽  
J. M. Soden
Keyword(s):  
Integrated Circuits ◽  
Failure Analysis ◽  
Cross Sections ◽  
Material Removal ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Yield Enhancement ◽  
The Past ◽  
Design Changes ◽  
Design Debugging

A great deal can be learned about integrated circuits (ICs) and microelectronic structures simply by imaging them in a focused ion beam (FIB) system. FIB systems have evolved during the past decade from something of a curiosity to absolutely essential tools for microelectronics design verification and failure analysis. FIB system capabilities include localized material removal, localized deposition of conductors and insulators, and imaging. A major commercial driver for FIB systems is their usefulness in the design debugging cycle by (1) rewiring ICs quickly to test design changes and (2) making connection to deep conductors to facilitate electrical probing of complex ICs. FIB milling is also used for making precision cross sections and for TEM sample preparation of microelectronic structures for failure analysis and yield enhancement applications.

Applications of In-situ Sample Preparation and Modeling of SEM-STEM Imaging

2008 ◽  
Author(s):  
R.J. Young ◽  
A. Buxbaum ◽  
B. Peterson ◽  
R. Schampers
Keyword(s):  
Sample Preparation ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Dual Beam ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Electron Microscopes ◽  
Scanning Electron Microscopes ◽  
Preparation Techniques

Abstract Scanning transmission electron microscopy with scanning electron microscopes (SEM-STEM) has become increasing used in both SEM and dual-beam focused ion beam (FIB)-SEM systems. This paper describes modeling undertaken to simulate the contrast seen in such images. Such modeling provides the ability to help understand and optimize imaging conditions and also support improved sample preparation techniques.

scholarly journals Low Vacuum SEMs: Latest Generation Technologies and Applications

2007 ◽  
Vol 15 (4) ◽  
pp. 20-25
Author(s):  
William Neijssen ◽  
Ben Lich ◽  
Pete Carleson
Keyword(s):  
Focused Ion Beam ◽  
Electron Backscatter Diffraction ◽  
Ion Beam ◽  
High Vacuum ◽  
Ease Of Use ◽  
Wide Range ◽  
Sample Chamber ◽  
Electron Microscopes ◽  
Scanning Electron Microscopes ◽  
Backscatter Diffraction

Since becoming popular more than a decade ago, low vacuum scanning electron microscopes (SEM) have continued to evolve. The latest systems offer uncompromised performance over an unprecedented range of sample chamber vacuum conditions. Instruments are now available that provide near-nanometer resolution in all vacuum modes and the ability to operate at pressures as high as 4000 Pascals (~30 Torr). Low vacuum operation eliminates much of the sample preparation required for conventional (high vacuum) SEM. Insulating samples can be imaged without conductive coatings. Wet, dirty, outgassing samples can be examined without drying and fixing. Systems can also be configured with a wide range of ancillary capabilities for imaging, analysis, and sample manipulation, including advanced secondary, backscattered, and transmitted electron detection, X-ray spectrometry, electron backscatter diffraction, and focused ion beam (FIB) manipulation. The current generation of systems combine speed, flexibility, repeatability, and ease of use, making them the ideal solution for any laboratory that must satisfy a wide range of imaging and analytical demands.

scholarly journals Die Backside FIB Preparation for Identification and Characterization of Metal Voids

1999 ◽  
Author(s):  
Ann N. Campbell ◽  
William F. Filter ◽  
Nicholas Antoniou
Keyword(s):  
Integrated Circuits ◽  
Failure Analysis ◽  
Cross Sections ◽  
Integrated Circuit ◽  
Flip Chip ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Milling Process ◽  
Plan View ◽  
Metal Interconnects

Abstract Both the increased complexity of integrated circuits, resulting in six or more levels of integration, and the increasing use of flip-chip packaging have driven the development of integrated circuit (IC) failure analysis tools that can be applied to the backside of the chip. Among these new approaches are focused ion beam (FIB) tools and processes for performing chip edits/repairs from the die backside. This paper describes the use of backside FIB for a failure analysis application rather than for chip repair. Specifically, we used FIB technology to prepare an IC for inspection of voided metal interconnects (“lines”) and vias. Conventional FIB milling was combined with a superenhanced gas assisted milling process that uses XeF2 for rapid removal of large volumes of bulk silicon. This combined approach allowed removal of the TiW underlayer from a large number of M1 lines simultaneously, enabling rapid localization and plan view imaging of voids in lines and vias with backscattered electron (BSE) imaging in a scanning electron microscope (SEM). Sequential cross sections of individual voided vias enabled us to develop a 3D reconstruction of these voids. This information clarified how the voids were formed, helping us identify the IC process steps that needed to be changed.

scholarly journals Monitoring Carbon in Electron and Ion Beam Deposition within FIB-SEM

Materials ◽  
2021 ◽  
Vol 14 (11) ◽  
pp. 3034
Author(s):  
Nicholas T.H. Farr ◽  
Gareth M. Hughes ◽  
Cornelia Rodenburg
Keyword(s):  
Secondary Electron ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Chemical Surface ◽  
Bonding State ◽  
Ion Beam Deposition ◽  
Electron Microscopes ◽  
Scanning Electron Microscopes ◽  
Beam Deposition

It is well known that carbon present in scanning electron microscopes (SEM), Focused ion beam (FIB) systems and FIB-SEMs, causes imaging artefacts and influences the quality of TEM lamellae or structures fabricated in FIB-SEMs. The severity of such effects depends not only on the quantity of carbon present but also on its bonding state. Despite this, the presence of carbon and its bonding state is not regularly monitored in FIB-SEMs. Here we demonstrated that Secondary Electron Hyperspectral Imaging (SEHI) can be implemented in different FIB-SEMs (ThermoFisher Helios G4-CXe PFIB and Helios Nanolab G3 UC) and used to observe carbon built up/removal and bonding changes resulting from electron/ion beam exposure. As well as the ability to monitor, this study also showed the capability of Plasma FIB Xe exposure to remove carbon contamination from the surface of a Ti6246 alloy without the requirement of chemical surface treatments.

Microstructural characterization of copper metallic deposition by electroplating growth for SIP applications

2011 ◽  
Vol 1288 ◽  
Author(s):  
Céline Durand ◽  
Bernadette Domengès ◽  
Philippe Le Duc
Keyword(s):  
Integrated Circuits ◽  
Cross Sections ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Chemical Deposition ◽  
Microstructural Characterization ◽  
Copper Metallization ◽  
Heteroepitaxial Growth ◽  
Lower Growth ◽  
Microscopy Imaging

ABSTRACTMicrostructural characterization (Focused Ion Beam and Transmission Electron Microscopy imaging) was performed on cross-sections of contacts in thick Electro Chemical Deposition copper metallization of System In Package Integrated Circuits. It was shown that the lower growth rate of ECD-Cu in the AlSiCu – barrier Ti – PVD-Cu – ECD-Cu layer stacking is related to a local higher resistivity induced by the presence of a great number of almost planar grain boundaries in the PVD-Cu layer, which are perpendicular to the growth axis. This morphology is a consequence of the almost heteroepitaxial growth of Ti layer on AlSiCu layer.

scholarly journals Online Microscopy Lab Training Modules in an Academic Environment

2008 ◽  
Vol 16 (5) ◽  
pp. 44-47
Author(s):  
K. Schierbeek ◽  
A. Mikel ◽  
S. E. Hill ◽  
O. P. Mills
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
X Ray ◽  
Transmission Electron ◽  
Analysis Laboratory ◽  
Electron Microscopes ◽  
Scanning Electron Microscopes ◽  
Fluorescence Spectrometer ◽  
Training Modules ◽  
Operation Cost

The Applied Chemical and Morphological Analysis Laboratory (ACMAL) is a multi-user, multi-disciplinary characterization laboratory. ACMAL houses two scanning electron microscopes (SEM and FE-SEM), a transmission electron microscope (TEM), focused ion beam milling system (FIB), four X-ray diffractometers, and an X-ray fluorescence spectrometer. ACMAL operates as a recharge center where users absorb facility operation cost through an hourly use fee. As such, we are keenly interested in encouraging broad access to the facility by lowering obstacles to users. Facility training enhancements provide the best pathway to productive and responsible facility usage.

scholarly journals TEM Sample Preparation Using Focused Ion Beam - Capabilities And Limits

2003 ◽  
Vol 11 (2) ◽  
pp. 22-25 ◽  
Author(s):  
H.J. Engelmann ◽  
B. Volkmann ◽  
Y. Ritz ◽  
H. Saage ◽  
H Stegmann ◽  
...  
Keyword(s):  
Electron Beam ◽  
Sample Preparation ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Sample Handling ◽  
Electron Microscopes ◽  
Scanning Electron Microscopes ◽  
Preparation Techniques ◽  
Scanning Electron

TEM sample preparation using Focused Ion Beam (FIB) methods becomes more and more interesting for microscopists because the technique allows for reliable and very efficient sample preparation. The first application of TEM sample preparation by FIB-cutting was reported more than 10 years ago. Meanwhile, a lot of experience has been gathered that allows one to discuss the capabilities and limits of the FIB technique in detail.Several TEM sample preparation techniques are known that all include FIB-cutting but differ in sample pre-preparation, sample handling,etc. This paper focuses on the actual FIB process, FIB tools are closely related to Scanning Electron Microscopes, but instead of an electron beam an ion beam (mostly Ga+ions) is used to remove and deposit material.

scholarly journals In situ nanomechanical testing in focused ion beam and scanning electron microscopes

2011 ◽  
Vol 82 (6) ◽  
pp. 063901 ◽  
Author(s):  
D. S. Gianola ◽  
A. Sedlmayr ◽  
R. Mönig ◽  
C. A. Volkert ◽  
R. C. Major ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Nanomechanical Testing ◽  
Electron Microscopes ◽  
Scanning Electron Microscopes ◽  
Scanning Electron

Simulation of Focused Ion Beam Induced Damage Formation in Crystalline Silicon

2003 ◽  
Vol 792 ◽  
Author(s):  
Gerhard Hobler ◽  
Alois Lugstein ◽  
Wolfgang Brezna ◽  
Emmerich Bertagnolli
Keyword(s):  
Integrated Circuits ◽  
Cross Sections ◽  
Focused Ion Beam ◽  
Crystalline Silicon ◽  
Ion Beam ◽  
Amorphous Layer ◽  
Binary Collision ◽  
Focused Ion Beams ◽  
Active Devices ◽  
Transmission Electron

ABSTRACTApplication of focused ion beams (FIB) to circuit modification during design and debugging of integrated circuits is limited by the degradation of active devices due to beam induced crystal damage. In order to investigate FIB induced damage formation theoretically, we have extended our 1-D/2-D binary collision (BC) code IMSIL to allow surface movement due to sputtering. In contrast to other dynamic BC codes, the crystal structure of the target and damage generation during implantation may be taken into account. Using this tool we simulate the milling of trenches in the gate stack of MOSFETs and compare the results with transmission electron microscopy cross sections and charge pumping data. The simulations confirm that damage tails are generated that are a factor of two deeper at relevant defect concentrations than expected by conventional BC simulations. This result is shown to be due to recoil channeling in spite of the fact that a beam-induced surface amorphous layer is present throughout the implant. In addition, we discuss the accuracy of the experimental results and the simulations.

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