High breakdown voltage with low on-state resistance of p-InGaN∕n-GaN vertical conducting diodes on n-GaN substrates

2006 ◽  
Vol 89 (15) ◽  
pp. 153509 ◽  
Author(s):  
Atsushi Nishikawa ◽  
Kazuhide Kumakura ◽  
Toshiki Makimoto
Keyword(s):  
Breakdown Voltage ◽  
High Breakdown Voltage ◽  
State Resistance

500 K operation AlGaN/GaN HFETs with a large current and a high breakdown voltage

2006 ◽  
Vol 955 ◽  
Author(s):  
Hiroshi Kambayashi ◽  
Jiang Li ◽  
Nariaki Ikeda ◽  
Seikoh Yoshida
Keyword(s):  
Breakdown Voltage ◽  
Large Scale ◽  
Room Temperature ◽  
Drain Current ◽  
High Breakdown Voltage ◽  
Large Current ◽  
Drain Electrode ◽  
Current Operation ◽  
State Breakdown ◽  
State Resistance

ABSTRACTIt is reported that we demonstrated a large current operation AlGaN/GaN HFET with a low-on state resistance and a high breakdown voltage operation at room temperature and 500 K. We developed our unique ohmic electrode using Ti/AlSi/Mo. In addition, we investigated the dependence between the distance from the gate electrode to the drain electrode and the off-state breakdown voltage. As a result, the breakdown voltage of a unit HFET was over 1100 V. Furthermore, on the large scale HFET with the gate width of 240 mm, the maximum drain current of over 50 A was obtained at room temperature and also, that of over 25 A was obtained at 500 K. The off-state breakdown voltage was obtained about 800 V at room temperature and about 600 V at 500 K, although Si-based FETs can not operate in such a high temperature.

High-Temperature Operation of AlGaN/GaN HFET With a Low on-State Resistance, High Breakdown Voltage, and Fast Switching

2006 ◽  
Vol 53 (12) ◽  
pp. 2908-2913 ◽  
Author(s):  
Takehiko Nomura ◽  
Hiroshi Kambayashi ◽  
Mitsuru Masuda ◽  
Sonomi Ishii ◽  
Nariaki Ikeda ◽  
...  
Keyword(s):  
High Temperature ◽  
Breakdown Voltage ◽  
Fast Switching ◽  
High Breakdown Voltage ◽  
Gan Hfet ◽  
High Temperature Operation ◽  
State Resistance

scholarly journals Implementation of a 900 V Switching Circuit for High Breakdown Voltage β-Ga2O3 Schottky Diodes

2019 ◽  
Vol 8 (7) ◽  
pp. Q3229-Q3234 ◽  
Author(s):  
Yen-Ting Chen ◽  
Jiancheng Yang ◽  
Fan Ren ◽  
Chin-Wei Chang ◽  
Jenshan Lin ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Schottky Diodes ◽  
Switching Circuit ◽  
High Breakdown Voltage

High Breakdown Voltage GaN HEMT Device Fabricated on Self-Standing GaN Substrate

2013 ◽  
Vol 347-350 ◽  
pp. 1535-1539
Author(s):  
Jian Jun Zhou ◽  
Liang Li ◽  
Hai Yan Lu ◽  
Ceng Kong ◽  
Yue Chan Kong ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Breakdown Voltage ◽  
Oxygen Plasma ◽  
Cutoff Frequency ◽  
Chemical Vapor ◽  
Current Gain ◽  
Organic Chemical ◽  
Oxygen Plasma Treatment ◽  
Gan Hemt ◽  
High Breakdown Voltage

In this letter, a high breakdown voltage GaN HEMT device fabricated on semi-insulating self-standing GaN substrate is presented. High quality AlGaN/GaN epilayer was grown on self-standing GaN substrate by metal organic chemical vapor deposition. A 0.8μm gate length GaN HEMT device was fabricated with oxygen plasma treatment. By using oxygen plasma treatment, gate forward working voltage is increased, and a breakdown voltage of more than 170V is demonstrated. The measured maximum drain current of the device is larger than 700 mA/mm at 4V gate bias voltage. The maximum transconductance of the device is 162 mS/mm. In addition, high frequency performance of the GaN HEMT device is also obtained. The current gain cutoff frequency and power gain cutoff frequency are 19.7 GHz and 32.8 GHz, respectively. A high fT-LG product of 15.76 GHzμm indicating that homoepitaxy technology is helpful to improve the frequency performance of the device.

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