High-Temperature Operation of AlGaN/GaN HFET With a Low on-State Resistance, High Breakdown Voltage, and Fast Switching

2006 ◽  
Vol 53 (12) ◽  
pp. 2908-2913 ◽  
Author(s):  
Takehiko Nomura ◽  
Hiroshi Kambayashi ◽  
Mitsuru Masuda ◽  
Sonomi Ishii ◽  
Nariaki Ikeda ◽  
...  
Keyword(s):  
High Temperature ◽  
Breakdown Voltage ◽  
Fast Switching ◽  
High Breakdown Voltage ◽  
Gan Hfet ◽  
High Temperature Operation ◽  
State Resistance

Normally-off GaN MOSFETs on Silicon Substrates with High-temperature Operation

2009 ◽  
Vol 1202 ◽  
Author(s):  
Hiroshi Kambayashi ◽  
Yuki Niiyama ◽  
Takehiko Nomura ◽  
Masayuki Iwami ◽  
yoshihiro Satoh ◽  
...  
Keyword(s):  
High Temperature ◽  
Room Temperature ◽  
Silicon Substrates ◽  
Enhancement Mode ◽  
Threshold Voltages ◽  
Source Voltage ◽  
Gan Hfet ◽  
Output Characteristics ◽  
High Temperature Operation ◽  
State Resistance

AbstractWe have demonstrated enhancement-mode n-channel gallium nitride (GaN) MOSFETs on Si (111) substrates with high-temperature operation up to 300 °C. The GaN MOSFETs have good normally-off operation with the threshold voltages of +2.7 V. The MOSFET exhibits good output characteristics from room temperature to 300 °C. The leakage current at 300°C is less than 100 pA/mm at the drain-to-source voltage of 0.1 V. The on-state resistance of MOSFET at 300°C is about 1.5 times as high as that at room temperature. These results indicate that GaN MOSFET is suitable for high-temperature operation compared with AlGaN/GaN HFET.

Ultra-thin AlGaN/GaN HFET with a high breakdown voltage on sapphire substrates

2021 ◽  
Vol 119 (25) ◽  
pp. 252101
Author(s):  
Zhiwen Liang ◽  
Hanghai Du ◽  
Ye Yuan ◽  
Qi Wang ◽  
Junjie Kang ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Sapphire Substrates ◽  
High Breakdown Voltage ◽  
Gan Hfet

500 K operation AlGaN/GaN HFETs with a large current and a high breakdown voltage

2006 ◽  
Vol 955 ◽  
Author(s):  
Hiroshi Kambayashi ◽  
Jiang Li ◽  
Nariaki Ikeda ◽  
Seikoh Yoshida
Keyword(s):  
Breakdown Voltage ◽  
Large Scale ◽  
Room Temperature ◽  
Drain Current ◽  
High Breakdown Voltage ◽  
Large Current ◽  
Drain Electrode ◽  
Current Operation ◽  
State Breakdown ◽  
State Resistance

ABSTRACTIt is reported that we demonstrated a large current operation AlGaN/GaN HFET with a low-on state resistance and a high breakdown voltage operation at room temperature and 500 K. We developed our unique ohmic electrode using Ti/AlSi/Mo. In addition, we investigated the dependence between the distance from the gate electrode to the drain electrode and the off-state breakdown voltage. As a result, the breakdown voltage of a unit HFET was over 1100 V. Furthermore, on the large scale HFET with the gate width of 240 mm, the maximum drain current of over 50 A was obtained at room temperature and also, that of over 25 A was obtained at 500 K. The off-state breakdown voltage was obtained about 800 V at room temperature and about 600 V at 500 K, although Si-based FETs can not operate in such a high temperature.

High breakdown voltage with low on-state resistance of p-InGaN∕n-GaN vertical conducting diodes on n-GaN substrates

2006 ◽  
Vol 89 (15) ◽  
pp. 153509 ◽  
Author(s):  
Atsushi Nishikawa ◽  
Kazuhide Kumakura ◽  
Toshiki Makimoto
Keyword(s):  
Breakdown Voltage ◽  
High Breakdown Voltage ◽  
State Resistance

A high breakdown-voltage SiCN/Si heterojunction diode for high-temperature applications

2002 ◽  
Vol 23 (3) ◽  
pp. 142-144 ◽  
Author(s):  
Shyh-Fann Ting ◽  
Yean-Kuen Fang ◽  
Wen-Tse Hsieh ◽  
Yong-Shiuan Tsair ◽  
Cheng-Nan Chang ◽  
...  
Keyword(s):  
High Temperature ◽  
Breakdown Voltage ◽  
Heterojunction Diode ◽  
High Breakdown Voltage ◽  
Temperature Applications

A performance comparison of normally-off and normally-on SiC JFETs toward use in high-temperature power modules

2011 ◽  
Vol 2011 (HITEN) ◽  
pp. 000098-000103
Author(s):  
R. Schrader ◽  
K. Speer ◽  
J. Casady ◽  
V. Bondarenko ◽  
D. Sheridan
Keyword(s):  
High Temperature ◽  
Performance Comparison ◽  
Design Factor ◽  
Fundamental Limitations ◽  
Power Modules ◽  
Extreme High Temperature ◽  
Effect Transistor ◽  
High Temperature Operation ◽  
State Resistance ◽  
Important Design

The high-temperature static and dynamic characteristics of the new 1200 V, 45 mΩ, 9 mm2 depletion-mode SiC vertical trench junction field-effect transistor (vtJFET) are compared with those of a 1200 V, 50 mΩ, 9 mm2 enhancement-mode SiC vtJFET. It is shown that both devices are fully capable of high-temperature operation and that each type has its own unique advantages. For applications operating in extreme high-temperature environments, the larger saturation current (~2.5x) and lower on-state resistance (~150 mΩ at 250 °C) of the depletion-mode SiC vtJFET provide very attractive performance at temperatures beyond silicon's fundamental limitations. In addition, operating the normally-on vtJFET at VGS less than 2 V reduces the gate drive's current requirements to a negligible level, which is an important design factor for high-temperature power modules that use multiple die in parallel.

Fast Switching (41 MHz), 2.5 mΩ•cm2, High Current 4H-SiC VJFETs for High Power and High Temperature Applications

2006 ◽  
Vol 527-529 ◽  
pp. 1183-1186 ◽  
Author(s):  
Lin Cheng ◽  
Janna R. B. Casady ◽  
Michael S. Mazzola ◽  
V. Bondarenko ◽  
Robin L. Kelley ◽  
...  
Keyword(s):  
High Temperature ◽  
Field Effect Transistors ◽  
Vertical Channel ◽  
Drain Current ◽  
Switching Frequency ◽  
High Current ◽  
Linear Region ◽  
Fast Switching ◽  
Increasing Temperature ◽  
High Temperature Operation

In this work we have demonstrated the operation of 600-V class 4H-SiC vertical-channel junction field-effect transistors (VJFETs) with 6.6-ns rise time, 7.6-ns fall time, 4.8-ns turn-on and 5.4-ns turn-off delay time at 2.5 A drain current (IDS), which corresponds to a maximum switching frequency of 41 MHz – the fastest ever reported switching of SiC JFETs to our knowledge. At IDS of 12 A, a 19.1 MHz maximum switching frequency has been also achieved. Specific on-resistance (Rsp-on) in the linear region is 2.5 m·cm2 at VGS of 3 V. The drain current density is greater than 1410 A/cm2 at 9 V drain voltage. High-temperature operation of the 4H-SiC VJFETs has also been investigated at temperatures from 25 °C to 225 °C. Changes in the on-resistance with temperature are in the range of 0.90~1.33%/°C at zero gate bias and IDS of 50 mA. The threshold voltage becomes more negative with a negative shift of 0.096~0.105%/°C with increasing temperature.

High breakdown voltage GaN HFET with field plate

2001 ◽  
Vol 37 (3) ◽  
pp. 196 ◽  
Author(s):  
J. Li ◽  
S.J. Cai ◽  
G.Z. Pan ◽  
Y.L. Chen ◽  
C.P. Wen ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Field Plate ◽  
High Breakdown Voltage ◽  
Gan Hfet
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