scholarly journals Electron microscopy study of Ni induced crystallization in amorphous Si thin films

2015 ◽  
Author(s):  
G. Z. Radnóczi ◽  
E. Dodony ◽  
G. Battistig ◽  
N. Vouroutzis ◽  
J. Stoemenos ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Amorphous Si ◽  
Induced Crystallization

Transmission Electron Microscopy Study of the Microstructure of Np- Etched CdTe Thin Films

2001 ◽  
Vol 7 (S2) ◽  
pp. 558-559
Author(s):  
K.M. Jones ◽  
Y. Yan ◽  
F.S. Hasoon ◽  
M.M. Al-Jassim
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Device Fabrication ◽  
Back Contact ◽  
Transmission Electron ◽  
Cdte Thin Films ◽  
Cdte Surface

Polycrystalline CdTe is a promising candidate for solar cells due to its nearly ideal band-gap, high absorption coefficient, and ease of film fabrication. Small-area CdTe/CdS cells with efficiencies of 16.0% have been demonstrated. The structure of a typical CdTe/CdS solar cell (Figure 1) consists of a glass superstrate, on which a thin layer of SnO2 is deposited (front contact), n-type CdS, p-type CdTe, and a back contact. Prior to applying the back contact to the CdTe, etching of the CdTe surface using a mixture of nitric and phosphoric (NP) acids is normally needed. It is known that the etching depletes a crystalline CdTe surface of Cd and creates a Te-rich layer. Two effects of the Te-rich layer has been proposed, namely, forming a Te-CdTe low-series-resistance contact and improving CdTe device stability by the gettering of Cu. Thus, the NP etching is an important process in the CdTe device fabrication. in this paper, we report on transmission electron microscopy (TEM) study of the microstructure of the surface of NP etched CdTe thin films.

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