Monte Carlo study of surface roughness scattering in Si inversion layer with improved matrix element

2006 ◽  
Vol 100 (4) ◽  
pp. 044513 ◽  
Author(s):  
Won-Jun Cha ◽  
Tae-Hun Shim ◽  
Jea-Gun Park ◽  
Sang-Dong Yoo
Keyword(s):  
Surface Roughness ◽  
Monte Carlo ◽  
Matrix Element ◽  
Inversion Layer ◽  
Monte Carlo Study ◽  
Surface Roughness Scattering

Monte Carlo study of remote Coulomb and remote surface roughness scattering in nanoscale Ge PMOSFETs with ultrathin high-κ dielectrics

2006 ◽  
Vol 50 (2) ◽  
pp. 248-253 ◽  
Author(s):  
Bahniman Ghosh ◽  
Jer-Hueih Chen ◽  
Xiao-Feng Fan ◽  
Leonard F. Register ◽  
Sanjay K. Banerjee
Keyword(s):  
Surface Roughness ◽  
Monte Carlo ◽  
Monte Carlo Study ◽  
Surface Roughness Scattering

Kinetic Monte Carlo study on the evolution of silicon surface roughness under hydrogen thermal treatment

2017 ◽  
Vol 414 ◽  
pp. 361-364 ◽  
Author(s):  
Gang Wang ◽  
Yu Wang ◽  
Junzhuan Wang ◽  
Lijia Pan ◽  
Linwei Yu ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Monte Carlo ◽  
Thermal Treatment ◽  
Silicon Surface ◽  
Kinetic Monte Carlo ◽  
Monte Carlo Study

scholarly journals Electron Mobility and Monte Carlo device simulation of MOSFETs

VLSI Design ◽  
1998 ◽  
Vol 6 (1-4) ◽  
pp. 27-30 ◽  
Author(s):  
S. Yamakawa ◽  
H. Ueno ◽  
K. Taniguchi ◽  
C. Hamaguchi ◽  
K. Miyatsuji ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Monte Carlo ◽  
Electron Mobility ◽  
Phonon Scattering ◽  
Inversion Layer ◽  
Device Simulation ◽  
Electron States ◽  
Main Emphasis ◽  
Good Agreement ◽  
Monte Carlo Device Simulation

The electron mobility in the inversion layer of a MOSFET, formed on the (100) silicon surface, is calculated by using a Monte Carlo approach which takes into account size quantization, acoustic phonon scattering, intervalley phonon scattering and surface roughness scattering. Degeneracy is also considered because it is important at higher normal effective fields (high gate voltages). The main emphasis is placed on the influence of the specific autocovariance function, used to describe the surface roughness, on the electron mobility. It is found that the electron mobility calculated with roughness scattering rates based on the exponential function shows a good agreement with experiments. Device simulation of a MOSFET is carried out to demonstrate the usefulness of the present model, where 3D electron states are taken into account in addtion to the 2D electron states.

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