Comparison of quantum well intermixing in GaAs structures using a low temperature grown epitaxial layer or a SiO2 cap

2006 ◽  
Vol 100 (2) ◽  
pp. 023101 ◽  
Author(s):  
A. S. W. Lee ◽  
O. Hulko ◽  
D. A. Thompson ◽  
B. J. Robinson ◽  
J. G. Simmons
Keyword(s):  
Low Temperature ◽  
Quantum Well ◽  
Epitaxial Layer ◽  
Quantum Well Intermixing

Quantum well intermixing in InGaAsP laser structures using a low temperature grown InP cap layer

2003 ◽  
Vol 18 (8) ◽  
pp. 782-787 ◽  
Author(s):  
B E Gordon ◽  
A S W Lee ◽  
D A Thompson ◽  
B J Robinson
Keyword(s):  
Low Temperature ◽  
Quantum Well ◽  
Quantum Well Intermixing ◽  
Cap Layer

scholarly journals (Invited) Effect of the Plasma Etching on InAsP/InP Quantum Well Structures Measured through Low Temperature Micro-Photoluminescence and Cathodoluminescence

2020 ◽  
Vol 97 (2) ◽  
pp. 43-55
Author(s):  
Jean-Pierre Landesman ◽  
Nebile Isik Goktas ◽  
Ray R LaPierre ◽  
Shahram Ghanad-Tavakoli ◽  
Erwine Pargon ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Well ◽  
Plasma Etching ◽  
Quantum Well Structures

scholarly journals Characterization of selective quantum well intermixing in 1.3 μm GaInNAs/GaAs structures

2003 ◽  
Vol 94 (3) ◽  
pp. 1550-1556 ◽  
Author(s):  
H. D. Sun ◽  
R. Macaluso ◽  
M. D. Dawson ◽  
F. Robert ◽  
A. C. Bryce ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Well Intermixing

Low‐temperature operating life of continuous 300‐K AlxGa1−xAs‐GaAs quantum‐well heterostructure lasers grown on Si

1991 ◽  
Vol 69 (10) ◽  
pp. 6844-6849 ◽  
Author(s):  
D. C. Hall ◽  
N. Holonyak ◽  
D. G. Deppe ◽  
M. J. Ries ◽  
R. J. Matyi ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Well ◽  
Operating Life ◽  
Temperature Operating
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