scholarly journals Characterization of selective quantum well intermixing in 1.3 μm GaInNAs/GaAs structures

2003 ◽  
Vol 94 (3) ◽  
pp. 1550-1556 ◽  
Author(s):  
H. D. Sun ◽  
R. Macaluso ◽  
M. D. Dawson ◽  
F. Robert ◽  
A. C. Bryce ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Well Intermixing

Fabrication and characterization of VCSELs applying quantum well intermixing using spin-on-glass

2013 ◽  
Vol 10 (11) ◽  
pp. 1452-1456 ◽  
Author(s):  
Tomohiro Akutsu ◽  
Takuya Ushio ◽  
Akihiro Matsutani ◽  
Tomoyuki Miyamoto
Keyword(s):  
Quantum Well ◽  
Quantum Well Intermixing ◽  
Fabrication And Characterization

Characterization of GaAs/AlGaAs quantum wells and quantum wires by chemical lattice imaging

1994 ◽  
Vol 52 ◽  
pp. 736-737
Author(s):  
A. Carlsson ◽  
J.-O. Malm ◽  
A. Gustafsson
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Quantum Wires ◽  
Vapour Phase ◽  
Quantitative Information ◽  
Lattice Imaging ◽  
Vapour Phase Epitaxy ◽  
Metalorganic Vapour Phase Epitaxy ◽  
High Resolution Images

In this study a quantum well/quantum wire (QW/QWR) structure grown on a grating of V-grooves has been characterized by a technique related to chemical lattice imaging. This technique makes it possible to extract quantitative information from high resolution images.The QW/QWR structure was grown on a GaAs substrate patterned with a grating of V-grooves. The growth rate was approximately three monolayers per second without growth interruption at the interfaces. On this substrate a barrier of nominally Al0.35 Ga0.65 As was deposited to a thickness of approximately 300 nm using metalorganic vapour phase epitaxy . On top of the Al0.35Ga0.65As barrier a 3.5 nm GaAs quantum well was deposited and to conclude the structure an additional approximate 300 nm Al0.35Ga0.65 As was deposited. The GaAs QW deposited in this manner turns out to be significantly thicker at the bottom of the grooves giving a QWR running along the grooves. During the growth of the barriers an approximately 30 nm wide Ga-rich region is formed at the bottom of the grooves giving a Ga-rich stripe extending from the bottom of each groove to the surface.

Characterization of asymmetric GaN/InGaN multiple quantum well

2009 ◽  
Vol 6 (S2) ◽  
pp. S711-S714 ◽  
Author(s):  
Z. Z. Chen ◽  
S. L. Qi ◽  
P. Liu ◽  
T. J. Yu ◽  
C. D. Wang ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum

Barrier-enhanced InGaAs/InAlAs photodetectors using quantum-well intermixing

2004 ◽  
Vol 48 (10-11) ◽  
pp. 1783-1790 ◽  
Author(s):  
Gregory B. Tait ◽  
David B. Ameen
Keyword(s):  
Quantum Well ◽  
Quantum Well Intermixing

Optical Diagnostics of Microstructures Fabricated Using Quantum Well Intermixing

1999 ◽  
Vol 607 ◽  
Author(s):  
A. Saher Helmy ◽  
A.C. Bryce ◽  
C.N. Ironside ◽  
J.S. Aitchison ◽  
J.H. Marsh ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Quantum Well ◽  
Spatial Resolution ◽  
Optical Diagnostics ◽  
Complete Suppression ◽  
Quantum Well Intermixing ◽  
Spatially Resolved ◽  
Non Destructive ◽  
Insight Into ◽  
Free Vacancy

AbstractIn this paper we shall discuss techniques for accurate, non-destructive, optical characterisation of structures fabricated using quantum well intermixing (QWI). Spatially resolved photoluminescence and Raman spectroscopy were used to characterise the lateral bandgap profiles produced by impurity free vacancy disordering (IFVD) technology. Different features were used to examine the spatial resolution of the intermixing process. Features include 1:1 gratings as well as isolated stripes. From the measurements, the spatial selectivity of IFVD could be identified, and was found to be ∼4.5 μm, in contrast with the spatial resolution of the process of sputtering induced intermixing, which was found to be ∼2.5 μm. In addition, PL measurements on 1:1 gratings fabricated using IFVD show almost complete suppression of intermixing dielectric cap gratings with periods less than 10 microns. Finally, some insight into the limitations and merits of PL and Raman for the precision characterisation of QWI will be presented.

scholarly journals Growth and characterization of SiGeSn quantum well photodiodes

2015 ◽  
Vol 23 (19) ◽  
pp. 25048 ◽  
Author(s):  
Inga A. Fischer ◽  
Torsten Wendav ◽  
Lion Augel ◽  
Songchai Jitpakdeebodin ◽  
Filipe Oliveira ◽  
...  
Keyword(s):  
Quantum Well
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