Direct epitaxial growth of semiconducting β-FeSi2 thin films on Si(111) by facing targets direct-current sputtering

2006 ◽  
Vol 88 (18) ◽  
pp. 182104 ◽  
Author(s):  
T. Yoshitake ◽  
Y. Inokuchi ◽  
A. Yuri ◽  
K. Nagayama
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Direct Current ◽  
Direct Current Sputtering

Influences of hydrogen passivation on NIR photodetection of n-type β-FeSi2/p-type Si heterojunction photodiodes fabricated by facing-targets direct-current sputtering

2012 ◽  
Vol 1396 ◽  
Author(s):  
Kyohei Yamashita ◽  
Nathaporn Promros ◽  
Ryūhei Iwasaki ◽  
Shota Izumi ◽  
Tsuyoshi Yoshitake
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Direct Current ◽  
The Other ◽  
Initial Growth ◽  
Hydrogen Passivation ◽  
Dangling Bonds ◽  
Capacitance Density ◽  
P Type ◽  
Direct Current Sputtering

ABSTRACTHydrogen passivation was applied to the initial epitaxial growth of n-type β-FeSi2 thin films on p-type Si(111) substrates by facing-targets direct-current sputtering (FTDCS) in order to reduced the formation of interface states and terminate dangling bonds in the β-FeSi2 films, and the passivation effects were studied on basis of the electrical evaluation results of the formed n-type β-FeSi2/p-type Si heterojunction photodiodes. The initial growth was made at different gas inflow H2/Ar ratios ranging from 0 to 0.2. The photodetection performance of the photodiode fabricated at the ratio of 0.2 was markedly improved as compared to those of the other samples. The quantum efficiency and detectivity were 2.08 % and 1.75 × 1010 cm√Hz/W, respectively. The sample exhibited the minimum junction capacitance density of 9.2 nF/cm2. The enhanced photodetective performance should be mainly because dangling bonds that act as trap centers for photocarriers are effectively inactivated by the passivation.

Interplay between variable direct current sputtering deposition process parameters and properties of ZnO:Ga thin films

2018 ◽  
Vol 660 ◽  
pp. 538-545 ◽  
Author(s):  
Mohammad Tanvirul Ferdaous ◽  
Seyed Ahmad Shahahmadi ◽  
Megat Mohd Izhar Sapeli ◽  
Puvaneswaran Chelvanathan ◽  
Md. Akhtaruzzaman ◽  
...  
Keyword(s):  
Thin Films ◽  
Process Parameters ◽  
Direct Current ◽  
Deposition Process ◽  
Sputtering Deposition ◽  
Direct Current Sputtering

Superconducting characteristics and epitaxial-growth analyses of YBa2Cu3O7−x thin films by direct-current magnetron sputtering

1993 ◽  
Vol 28 (18) ◽  
pp. 4846-4849 ◽  
Author(s):  
Yijie Li ◽  
Guangcheng Xiong ◽  
Zizhao Gan ◽  
Congxin Ren ◽  
Guoliang Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Epitaxial Growth ◽  
Direct Current ◽  
Direct Current Magnetron Sputtering ◽  
Growth Analyses

Field electron emission from HfNxOy thin films deposited by direct current sputtering

2008 ◽  
Vol 254 (10) ◽  
pp. 3074-3077 ◽  
Author(s):  
Xing-Min Cai ◽  
Fan Ye ◽  
Er-Qing Xie ◽  
Dong-Ping Zhang ◽  
Ping Fan
Keyword(s):  
Thin Films ◽  
Direct Current ◽  
Electron Emission ◽  
Field Electron Emission ◽  
Field Electron ◽  
Direct Current Sputtering

Room-temperature epitaxial growth of ferromagnetic Fe3Si films on Si(111) by facing target direct-current sputtering

2005 ◽  
Vol 86 (26) ◽  
pp. 262505 ◽  
Author(s):  
T. Yoshitake ◽  
D. Nakagauchi ◽  
T. Ogawa ◽  
M. Itakura ◽  
N. Kuwano ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Direct Current ◽  
Room Temperature ◽  
Direct Current Sputtering
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