Interplay between variable direct current sputtering deposition process parameters and properties of ZnO:Ga thin films

2018 ◽  
Vol 660 ◽  
pp. 538-545 ◽  
Author(s):  
Mohammad Tanvirul Ferdaous ◽  
Seyed Ahmad Shahahmadi ◽  
Megat Mohd Izhar Sapeli ◽  
Puvaneswaran Chelvanathan ◽  
Md. Akhtaruzzaman ◽  
...  
Keyword(s):  
Thin Films ◽  
Process Parameters ◽  
Direct Current ◽  
Deposition Process ◽  
Sputtering Deposition ◽  
Direct Current Sputtering

Effects of RF magnetron sputtering deposition process parameters on the properties of molybdenum thin films

2017 ◽  
Vol 638 ◽  
pp. 213-219 ◽  
Author(s):  
P. Chelvanathan ◽  
S.A. Shahahmadi ◽  
F. Arith ◽  
K. Sobayel ◽  
M. Aktharuzzaman ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Process Parameters ◽  
Rf Magnetron Sputtering ◽  
Deposition Process ◽  
Sputtering Deposition

Excimer laser deposition of c-axis oriented Pb(Zr, Ti)O3 thin films on silicon substrates with direct-current glow discharge

1997 ◽  
Vol 12 (5) ◽  
pp. 1179-1182 ◽  
Author(s):  
Lirong Zheng ◽  
Xuhong Hu ◽  
Pingxiong Yang ◽  
W-ping Xu ◽  
Chenglu Lin
Keyword(s):  
Thin Films ◽  
Glow Discharge ◽  
Direct Current ◽  
Substrate Surface ◽  
Hysteresis Loops ◽  
Deposition Process ◽  
Discharge Voltage ◽  
Laser Deposition ◽  
Silicon Substrates ◽  
Ferroelectric Hysteresis

Ferroelectric thin films of Pb(Zr, Ti)O3 (PZT) were fabricated on platinum-coated silicon using the process of direct-current glow discharge assisted laser deposition, where the substrate was electrically grounded. The films deposited at 730 °C with +800 V discharge voltage are oriented mostly with the c-axis perpendicular to the substrate surface, and exhibit good ferroelectric hysteresis loops. A possible mechanism for the improvement of the deposition process has been proposed.

Effect of Electrode Types on the Resistive Switching Behavior of Titania Thin Films

2013 ◽  
Vol 393 ◽  
pp. 74-78 ◽  
Author(s):  
Zainuddin Aznilinda ◽  
Sukreen Hana Herman ◽  
Raudah Abu Bakar ◽  
M. Rusop
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Deposition Process ◽  
Switching Behavior ◽  
Flow Process ◽  
Sputtering Deposition ◽  
Memristive Behavior ◽  
Metal Work Function ◽  
Pt Electrodes ◽  
Metal Work

The resistive switching or memristive behavior of sputtered titania thin films sandwiched in between of three types of metal electrodes (Au, Pt and Ti) was investigated. The active region of the device consisted of two titania thin films, in which, the first layer was exposed to a plasma treatment to create the oxygen vacancies, before the deposition of the second layer. The whole active layer sputtering deposition process was conducted in a one-flow process without exposing the sample to the room ambient. From the I-V measurements, titania thin films in between Ti and Au did not show any resistive switching, but those sandwiched between Pt electrodes exhibit a noticeable memristive behavior. This may due to the metal work function of the platinum itself.

Direct current magnetron sputtering deposition of nanocomposite alumina — zirconia thin films

2008 ◽  
Vol 516 (23) ◽  
pp. 8352-8358 ◽  
Author(s):  
D.H. Trinh ◽  
T. Kubart ◽  
T. Nyberg ◽  
M. Ottosson ◽  
L. Hultman ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Direct Current ◽  
Sputtering Deposition ◽  
Direct Current Magnetron Sputtering

Incorporation of Ga in CIGS Absorber Layers Formed by RF-Magnetron Sputtering in Se Vapours

2008 ◽  
Vol 587-588 ◽  
pp. 323-327 ◽  
Author(s):  
Pedro M.P. Salomé ◽  
António F. da Cunha
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cell ◽  
Magnetron Sputtering ◽  
Depth Profiling ◽  
Rf Magnetron Sputtering ◽  
Deposition Process ◽  
Point Of View ◽  
Sputtering Deposition ◽  
Cell Parameters

Cu(In,Ga)Se2 (CIGS) thin film semiconductors are among the most attractive materials for thin film solar cell applications. Conversion efficiency exceeding 19% has been achieved for CIGS absorber layers deposited by three-stage co-evaporation technique. From a technological point of view the sputtering deposition process is more attractive than thermal co-evaporation, however, solar cell parameters obtained so far are worse. The highest efficiency value reported for co-sputtered CIS thin films is less than 8% and there is no data found for CIGS layers produced by a similar technique. We have developed a hybrid RF-magnetron sputtering/evaporation method for the deposition of the CIGS absorber layer. In this method Cu and In are sequentially sputtered from metallic targets in the presence of Se vapour. Ga depth profiling leads to a band gap grading which is known to play an important role in cell performance. Here, we report the results of our work on three different ways of Ga incorporation into the CIGS thin films. They consisted of sputtering from In-GaSe, Cu-GaSe composite targets and Ga evaporation. The Ga content and distribution across the layer thickness was investigated by AES measurements. The CIGS formation kinetics, structural and compositional studies were performed by SEM, XRD and AES measurements.

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