Electrical spin injection using GaCrN in a GaN based spin light emitting diode

2013 ◽  
Vol 103 (24) ◽  
pp. 242408 ◽  
Author(s):  
D. Banerjee ◽  
R. Adari ◽  
S. Sankaranarayan ◽  
A. Kumar ◽  
S. Ganguly ◽  
...  
2009 ◽  
Vol 94 (14) ◽  
pp. 141109 ◽  
Author(s):  
V. G. Truong ◽  
P.-H. Binh ◽  
P. Renucci ◽  
M. Tran ◽  
Y. Lu ◽  
...  

2008 ◽  
Vol 17 (01) ◽  
pp. 105-109
Author(s):  
ASAWIN SINSARP ◽  
TAKASHI MANAGO ◽  
FUMIYOSHI TAKANO ◽  
HIRO AKINAGA

We fabricated an FePt / MgO tunneling junction ( Fe 55 atomic %) on a GaAs -based light-emitting-diode structure. The out-of-plane magnetization of the FePt thin film was confirmed by a magneto-optical measurement. The electrical spin injection from FePt into GaAs at room temperature was studied using the technique of spin-polarized electroluminescence. The spin polarization of the injected electrons under the magnetic field of 1 T was at least 6.0%. The remnant polarization at 0 T, which indicates the spin injection without a magnetic field, was at least 3.3%.


2006 ◽  
Vol 99 (7) ◽  
pp. 073907 ◽  
Author(s):  
N. C. Gerhardt ◽  
S. Hövel ◽  
C. Brenner ◽  
M. R. Hofmann ◽  
F.-Y. Lo ◽  
...  

2003 ◽  
Vol 42 (Part 2, No. 5B) ◽  
pp. L502-L504 ◽  
Author(s):  
Pol Van Dorpe ◽  
Vasyl F. Motsnyi ◽  
Mayke Nijboer ◽  
Etienne Goovaerts ◽  
Viacheslav I. Safarov ◽  
...  

2003 ◽  
Vol 82 (13) ◽  
pp. 2160-2162 ◽  
Author(s):  
R. Fiederling ◽  
P. Grabs ◽  
W. Ossau ◽  
G. Schmidt ◽  
L. W. Molenkamp

2001 ◽  
Vol 79 (19) ◽  
pp. 3098-3100 ◽  
Author(s):  
B. T. Jonker ◽  
A. T. Hanbicki ◽  
Y. D. Park ◽  
G. Itskos ◽  
M. Furis ◽  
...  

2007 ◽  
Author(s):  
N. V. Baidus ◽  
M. I. Vasilevskiy ◽  
M. J. M. Gomes ◽  
V. D. Kulakovskii ◽  
S. V. Zaitsev ◽  
...  

2014 ◽  
Vol 59 (12) ◽  
pp. 1839-1843 ◽  
Author(s):  
M. V. Dorokhin ◽  
E. I. Malysheva ◽  
B. N. Zvonkov ◽  
A. V. Zdoroveishchev ◽  
Yu. A. Danilov ◽  
...  

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