Epitaxial growth and interfacial magnetism of spin aligner for remanent spin injection: [Fe/Tb]n/Fe/MgO/GaAs-light emitting diode as a prototype system

2010 ◽  
Vol 108 (6) ◽  
pp. 063902 ◽  
Author(s):  
E. Schuster ◽  
R. A. Brand ◽  
F. Stromberg ◽  
A. Ludwig ◽  
D. Reuter ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Light Emitting Diode ◽  
Spin Injection ◽  
Prototype System ◽  
Light Emitting

Spin injection light-emitting diode with vertically magnetized ferromagnetic metal contacts

2006 ◽  
Vol 99 (7) ◽  
pp. 073907 ◽  
Author(s):  
N. C. Gerhardt ◽  
S. Hövel ◽  
C. Brenner ◽  
M. R. Hofmann ◽  
F.-Y. Lo ◽  
...  
Keyword(s):  
Light Emitting Diode ◽  
Spin Injection ◽  
Ferromagnetic Metal ◽  
Metal Contacts ◽  
Light Emitting

scholarly journals Highly Efficient Room Temperature Spin Injection in a Metal-Insulator-Semiconductor Light-Emitting Diode

2003 ◽  
Vol 42 (Part 2, No. 5B) ◽  
pp. L502-L504 ◽  
Author(s):  
Pol Van Dorpe ◽  
Vasyl F. Motsnyi ◽  
Mayke Nijboer ◽  
Etienne Goovaerts ◽  
Viacheslav I. Safarov ◽  
...  
Keyword(s):  
Room Temperature ◽  
Light Emitting Diode ◽  
Spin Injection ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Light Emitting ◽  
Highly Efficient

GaN-Based Light-Emitting Diodes on Selectively Grown Semipolar Crystal Facets

MRS Bulletin ◽  
2009 ◽  
Vol 34 (5) ◽  
pp. 328-333 ◽  
Author(s):  
Ferdinand Scholz ◽  
Thomas Wunderer ◽  
Barbara Neubert ◽  
Martin Feneberg ◽  
Klaus Thonke
Keyword(s):  
Epitaxial Growth ◽  
Wavelength Range ◽  
Light Emitting Diode ◽  
Growth Direction ◽  
Large Area ◽  
Lower Efficiency ◽  
Selective Area Epitaxy ◽  
Time Resolved ◽  
Light Emitting ◽  
Piezoelectric Fields

AbstractIn this article, we briefly review a particular approach to fabricate light-emitting diode (LED) structures on the semipolar side facets of triangular GaN stripes grown by selective area epitaxy. This approach enables a significant reduction of the internal piezoelectric fields in the LED's active area, while still maintaining the well-established c-direction as the main epitaxial growth direction for GaN-based devices on large area substrates. For the latter, these internal fields are responsible for the lower efficiency of GaN-based LEDs in the longer (green) wavelength range. The reduced internal fields of such semipolar LEDs can be directly determined by photoluminescence (PL) investigations on pre-biased LED structures and further confirmed by time-resolved PL studies. The epitaxial growth behavior is strongly facet-dependent, leading to different surface flatnesses on different semipolar facets formed by this procedure and different – indium incorporation efficiencies. An increased indium uptake on semipolar {1101} facets as compared to conventional c-plane layers can help to shift the LED emission to longer wavelengths near 500 nm, despite the significantly reduced field-dependent Stark shift, which helps to reach the green wavelength range in polar LEDs.

scholarly journals Epitaxial Growth of GaP/InxGa1-xP (xIn ≥ 0.27) Virtual Substrate for Optoelectronic Applications

2011 ◽  
Vol 62 (2) ◽  
pp. 93-98 ◽  
Author(s):  
Stanislav Hasenöhrl ◽  
Jozef Novák ◽  
Ivo Vávra ◽  
Ján Šoltýs ◽  
Michal Kučera ◽  
...  
Keyword(s):  
Band Gap ◽  
Epitaxial Growth ◽  
Buffer Layer ◽  
Growth Parameters ◽  
Light Emitting Diode ◽  
Lattice Parameter ◽  
Buffer Layers ◽  
Light Emitting ◽  
Optoelectronic Applications ◽  
Band Gap Structure

Epitaxial Growth of GaP/InxGa1-xP (xIn ≥ 0.27) Virtual Substrate for Optoelectronic Applications Compositionally graded epitaxial semiconductor buffer layers are prepared with the aim of using them as a virtual substrate for following growth of heterostructures with the lattice parameter different from that of the substrates available on market (GaAs, GaP, InP or InAs). In this paper we report on the preparation of the step graded InxGa1-xP buffer layers on the GaP substrate. The final InxGa1-xP composition xIn was chosen to be at least 0.27. At this composition the InxGa1-xP band-gap structure converts from the indirect to the direct one and the material of such composition is suitable for application in light emitting diode structures. Our task was to design a set of layers with graded composition (graded buffer layer) and to optimize growth parameters with the aim to prepare strain relaxed template of quality suitable for the subsequent epitaxial growth.

Spin injection of electrons in GaMnAs/GaAs/InGaAs light-emitting diode structures with a tunnel junction

2014 ◽  
Vol 59 (12) ◽  
pp. 1839-1843 ◽  
Author(s):  
M. V. Dorokhin ◽  
E. I. Malysheva ◽  
B. N. Zvonkov ◽  
A. V. Zdoroveishchev ◽  
Yu. A. Danilov ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Light Emitting Diode ◽  
Spin Injection ◽  
Light Emitting
Sign in / Sign up

Export Citation Format

Share Document