scholarly journals High speed pulsed electrical spin injection in spin-light emitting diode

2009 ◽  
Vol 94 (14) ◽  
pp. 141109 ◽  
Author(s):  
V. G. Truong ◽  
P.-H. Binh ◽  
P. Renucci ◽  
M. Tran ◽  
Y. Lu ◽  
...  
Keyword(s):  
High Speed ◽  
Light Emitting Diode ◽  
Spin Injection ◽  
Light Emitting ◽  
Electrical Spin

Electrical spin injection using GaCrN in a GaN based spin light emitting diode

2013 ◽  
Vol 103 (24) ◽  
pp. 242408 ◽  
Author(s):  
D. Banerjee ◽  
R. Adari ◽  
S. Sankaranarayan ◽  
A. Kumar ◽  
S. Ganguly ◽  
...  
Keyword(s):  
Light Emitting Diode ◽  
Spin Injection ◽  
Light Emitting ◽  
Electrical Spin

ELECTRICAL SPIN INJECTION FROM AN IRON-RICH IRON–PLATINUM THIN FILM INTO GALLIUM ARSENIDE

2008 ◽  
Vol 17 (01) ◽  
pp. 105-109
Author(s):  
ASAWIN SINSARP ◽  
TAKASHI MANAGO ◽  
FUMIYOSHI TAKANO ◽  
HIRO AKINAGA
Keyword(s):  
Magnetic Field ◽  
Thin Film ◽  
Optical Measurement ◽  
Light Emitting Diode ◽  
Spin Injection ◽  
Light Emitting ◽  
Iron Platinum ◽  
Spin Polarized ◽  
Out Of Plane ◽  
Electrical Spin

We fabricated an FePt / MgO tunneling junction ( Fe 55 atomic %) on a GaAs -based light-emitting-diode structure. The out-of-plane magnetization of the FePt thin film was confirmed by a magneto-optical measurement. The electrical spin injection from FePt into GaAs at room temperature was studied using the technique of spin-polarized electroluminescence. The spin polarization of the injected electrons under the magnetic field of 1 T was at least 6.0%. The remnant polarization at 0 T, which indicates the spin injection without a magnetic field, was at least 3.3%.

Spin injection light-emitting diode with vertically magnetized ferromagnetic metal contacts

2006 ◽  
Vol 99 (7) ◽  
pp. 073907 ◽  
Author(s):  
N. C. Gerhardt ◽  
S. Hövel ◽  
C. Brenner ◽  
M. R. Hofmann ◽  
F.-Y. Lo ◽  
...  
Keyword(s):  
Light Emitting Diode ◽  
Spin Injection ◽  
Ferromagnetic Metal ◽  
Metal Contacts ◽  
Light Emitting

scholarly journals Fuzzy Based Network Assignment and Link-Switching Analysis in Hybrid OCC/LiFi System

2018 ◽  
Vol 2018 ◽  
pp. 1-15 ◽  
Author(s):  
Moh. Khalid Hasan ◽  
Mostafa Zaman Chowdhury ◽  
Md. Shahjalal ◽  
Yeong Min Jang
Keyword(s):  
Hybrid System ◽  
Communication Systems ◽  
High Speed ◽  
Light Emitting Diode ◽  
Flow Analysis ◽  
Optical Wireless Communications ◽  
Light Emitting ◽  
High Speed Data ◽  
Transmission Capability ◽  
Time Division

In recent times, optical wireless communications (OWC) have become attractive research interest in mobile communication for its inexpensiveness and high-speed data transmission capability and it is already recognized as complementary to radio-frequency (RF) based technologies. Light fidelity (LiFi) and optical camera communication (OCC) are two promising OWC technologies that use a photo detector (PD) and a camera, respectively, to receive optical pulses. These communication systems can be implemented in all kinds of environments using existing light-emitting diode (LED) infrastructures to transmit data. However, both networking layers suffer from several limitations. An excellent solution to overcoming these limitations is the integration of OCC and LiFi. In this paper, we propose a hybrid OCC and LiFi architecture to improve the quality-of-service (QoS) of users. A network assignment mechanism is developed for the hybrid system. A dynamic link-switching technique for efficient handover management between networks is proposed afterward which includes switching provisioning based on user mobility and detailed network switching flow analysis. Fuzzy logic (FL) is used to develop the proposed mechanisms. A time-division multiple access (TDMA) based approach, called round-robin scheduling (RRS), is also adopted to ensure fairness in time resource allocation while serving multiple users using the same LED in the hybrid system. Furthermore, simulation results are presented taking different practical application scenarios into consideration. The performance analysis of the network assignment mechanism, which is provided at the end of the paper, demonstrates the importance and feasibility of the proposed scheme.

scholarly journals Highly Efficient Room Temperature Spin Injection in a Metal-Insulator-Semiconductor Light-Emitting Diode

2003 ◽  
Vol 42 (Part 2, No. 5B) ◽  
pp. L502-L504 ◽  
Author(s):  
Pol Van Dorpe ◽  
Vasyl F. Motsnyi ◽  
Mayke Nijboer ◽  
Etienne Goovaerts ◽  
Viacheslav I. Safarov ◽  
...  
Keyword(s):  
Room Temperature ◽  
Light Emitting Diode ◽  
Spin Injection ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Light Emitting ◽  
Highly Efficient
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