Tunneling magnetoresistance of magnetic tunneling junction cell measured by conducting atomic force microscopy with ramping dc bias voltage rate

2006 ◽  
Vol 99 (8) ◽  
pp. 08R705 ◽  
Author(s):  
Min-Fong Shu ◽  
A. Canizo-Cabrera ◽  
Chih-Cheng Hsu ◽  
C. C. Chen ◽  
J. C. Wu ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Bias Voltage ◽  
Tunneling Magnetoresistance ◽  
Tunneling Junction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Dc Bias ◽  
Magnetic Tunneling Junction ◽  
Magnetic Tunneling

Si/SiGe Nanostructures Fabricated by Atomic Force Microscopy Oxidation

2001 ◽  
Vol 686 ◽  
Author(s):  
Xiang-Zheng Bo ◽  
Leonid P. Rokhinson ◽  
Haizhou Yin ◽  
D. C. Tsui ◽  
J. C. Sturm
Keyword(s):  
Atomic Force Microscopy ◽  
High Resolution ◽  
Quantum Well ◽  
Bias Voltage ◽  
Silicon Germanium ◽  
Force Microscopy ◽  
Atomic Force ◽  
Line Widths ◽  
Humidity Environment ◽  
Strained Sige

AbstractIn this work, local AFM oxidation technique in a controlled humidity environment has been used to create small features in strained SiGe alloys. When directly oxidizing SiGe alloys, minimum line widths of 20nm were achieved by adjusting parameters such as the bias voltage on the microscope tip and the tip writing speed. It was found that when bias voltage increases, and/or when the tip writing speed decreases, the oxidation height of silicon-germanium increases. In contrast to conventional thermal oxidation, the oxide height on SiGe alloys is slightly less than that on Si. Finally, this method was used to successfully cut conducting SiGe quantum well lines with high resolution.

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