Effect of seed layer thickness on the Ta crystalline phase and spin Hall angle

The crystalline phase of the Tantalum (Ta) deposited on the Permalloy (Py) layer strongly depends on seed Py layer thickness. Ta exhibits a phase transition from α-Ta to mixed phase (α+β)-Ta as a function of the Py thickness.

THE EFFECTIVENESS OF INNOVATION OF DRYING FLOOR ON THE DELAY OF DRYING POSTPONEMENT AND SEED LAYER THICKNESS TOWARDS VIGOUR AND GROWTH OF RICE SEEDS (Oryza sativa L.)

Drying is one of the important post-harvest activities. Limitations on the location of drying, labor and during the rainy season cause delays in drying. Delays in drying and improper seed layer thickness can reduce the quality of the resulting seed. The purpose of this study is to determine the time delay for drying and the maximum thickness of the seed that did not reduce the viability and growth of rice plants. The study used the innovation drying floor of UPT BBP Barongan, Bantul and Split Plot Design with 2 factors. The first factor as Main Plot was the treatment of drying delay: 2.4 and 6 days. The second factor as a sub plot is the thickness of the seed layer: 3, 5, 7, and 9 cm. The treatment is repeated 3 times. The research data were analyzed with Analysis of variance 5% and further tested with DMRT 5% (Duncan's Multiple Range Test). The results showed that the treatment of delaying drying for up to 6 days and the thickness of the seed drying layer up to 9 cm can be tolerated with innovative drying tools so it does not reduce the seed vigour and growth of rice plants. Keyword: drying delay, seed layer thickness, innovation drying floor, rice vigour and growth

Synthesis of Catalyst-Free Al Doped β-Ga2O3 Nanorod Arrays on Quartz Substrate by a Simple Chemical Vapor Deposition

The Al doped β-Ga2O3 (β-Ga2O3:Al) nanorod arrays with 3.14 at% Al were successfully synthesized on quartz substrate with β-Ga2O3 seed layer by using chemical vapor deposition (CVD) method. The experimental results showed that the β-Ga2O3 seed layer thickness had important effects on alignment of β-Ga2O3:Al nanorods. At the synthesized temperature of 910 °C, the β-Ga2O3:Al nanorods were random, uneven length and size on seedless layer quartz substrates, disorderly stacked together to shape on quartz substrates with 17 nm thick β-Ga2O3 seed layer and inclined nanorod arrays on quartz substrates with 91 nm thick β-Ga2O3 seed layer. The XRD, XPS and EDX measurements proved that Al was doped into nanorods and substituted for Ga atom. The optical transmittances of all β-Ga2O3:Al nanorods were above 70% in the region with wavelength greater than 276 nm and showed a sharp drop around wavelength of 250 nm. The band gap of β-Ga2O3 nanorods increased from 4.85 eV to 4.93 eV after 3.14 at% Al doping.