Direct measurement and characterization of n+ superhalo implants in a 120 nm gate-length Si metal–oxide–semiconductor field-effect transistor using cross-sectional scanning capacitance microscopy

2002 ◽  
Vol 81 (21) ◽  
pp. 3993-3995 ◽  
Author(s):  
P. A. Rosenthal ◽  
Y. Taur ◽  
E. T. Yu
Keyword(s):  
Metal Oxide ◽  
Direct Measurement ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Length ◽  
Cross Sectional ◽  
Effect Transistor

Characterization of Strain for High-Performance Metal–Oxide–Semiconductor Field-Effect-Transistor

2008 ◽  
Vol 47 (4) ◽  
pp. 2538-2543 ◽  
Author(s):  
Daisuke Kosemura ◽  
Yasuto Kakemura ◽  
Tetsuya Yoshida ◽  
Atsushi Ogura ◽  
Masayuki Kohno ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Effect Transistor

scholarly journals Experimental characterization of a metal-oxide-semiconductor field-effect transistor-based Coulter counter

2008 ◽  
Vol 103 (10) ◽  
pp. 104701 ◽  
Author(s):  
Manoj Sridhar ◽  
Dongyan Xu ◽  
Yuejun Kang ◽  
Anthony B. Hmelo ◽  
Leonard C. Feldman ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Coulter Counter ◽  
Oxide Semiconductor ◽  
Experimental Characterization ◽  
Effect Transistor
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