Conceptual material design for magnetic tunneling junction cap layer for high magnetoresistance ratio

M. Nagamine; T. Nagase; K. Nishiyama; M. Yoshikawa; M. Amano; Y. Asao; S. Ikegawa; H. Yoda; H. Honjo; K. Mori; N. Ishiwata; S. Tahara

doi:10.1063/1.2173637

Conceptual material design for magnetic tunneling junction cap layer for high magnetoresistance ratio

Journal of Applied Physics ◽

10.1063/1.2173637 ◽

2006 ◽

Vol 99 (8) ◽

pp. 08K703 ◽

Cited By ~ 3

Author(s):

M. Nagamine ◽

T. Nagase ◽

K. Nishiyama ◽

M. Yoshikawa ◽

M. Amano ◽

...

Keyword(s):

Material Design ◽

Tunneling Junction ◽

Cap Layer ◽

Magnetoresistance Ratio ◽

Magnetic Tunneling Junction ◽

Magnetic Tunneling

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Dependency of tunneling magnetoresistance ratio on Pt seed-layer thickness for double MgO perpendicular magnetic tunneling junction spin-valves with a top Co2Fe6B2free layerex-situannealed at 400 °C

Nanotechnology ◽

10.1088/0957-4484/27/48/485203 ◽

2016 ◽

Vol 27 (48) ◽

pp. 485203 ◽

Cited By ~ 3

Author(s):

Yasutaka Takemura ◽

Du-Yeong Lee ◽

Seung-Eun Lee ◽

Jea-Gun Park

Keyword(s):

Layer Thickness ◽

Seed Layer ◽

Spin Valves ◽

Tunneling Magnetoresistance ◽

Tunneling Junction ◽

Magnetoresistance Ratio ◽

Magnetic Tunneling Junction ◽

Magnetic Tunneling ◽

Seed Layer Thickness

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Dependency of Tunneling-Magnetoresistance Ratio on Nanoscale Spacer Thickness and Material for Double MgO Based Perpendicular-Magnetic-Tunneling-Junction

Scientific Reports ◽

10.1038/srep38125 ◽

2016 ◽

Vol 6 (1) ◽

Cited By ~ 12

Author(s):

Du-Yeong Lee ◽

Song-Hwa Hong ◽

Seung-Eun Lee ◽

Jea-Gun Park

Keyword(s):

Tunneling Magnetoresistance ◽

Tunneling Junction ◽

Magnetoresistance Ratio ◽

Magnetic Tunneling Junction ◽

Spacer Thickness ◽

Magnetic Tunneling

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Tunneling-Magnetoresistance Ratio Comparison of MgO-Based Perpendicular-Magnetic-Tunneling-Junction Spin Valve Between Top and Bottom Co2Fe6B2 Free Layer Structure

Nanoscale Research Letters ◽

10.1186/s11671-016-1637-9 ◽

2016 ◽

Vol 11 (1) ◽

Cited By ~ 7

Author(s):

Du-Yeong Lee ◽

Seung-Eun Lee ◽

Tae-Hun Shim ◽

Jea-Gun Park

Keyword(s):

Layer Structure ◽

Spin Valve ◽

Tunneling Magnetoresistance ◽

Tunneling Junction ◽

Free Layer ◽

Magnetoresistance Ratio ◽

Magnetic Tunneling Junction ◽

Magnetic Tunneling

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Thermally Stable Perpendicular-Magnetic Tunneling Junction Spin-Valve Implementing W Bridge, Space and Cap-Layer

ECS Meeting Abstracts ◽

10.1149/ma2016-02/16/1450 ◽

2016 ◽

Keyword(s):

Spin Valve ◽

Thermally Stable ◽

Tunneling Junction ◽

Cap Layer ◽

Magnetic Tunneling Junction ◽

Magnetic Tunneling

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Magnetic tunneling junction based magnetic field sensors: Role of shape anisotropy versus free layer thickness

Journal of Applied Physics ◽

10.1063/1.3563096 ◽

2011 ◽

Vol 109 (7) ◽

pp. 07C731 ◽

Cited By ~ 8

Author(s):

Lubna R. Shah ◽

Nupur Bhargava ◽

Sangcheol Kim ◽

Ryan Stearrett ◽

Xiaoming Kou ◽

...

Keyword(s):

Magnetic Field ◽

Layer Thickness ◽

Shape Anisotropy ◽

Tunneling Junction ◽

Free Layer ◽

Magnetic Field Sensors ◽

Magnetic Tunneling Junction ◽

Magnetic Tunneling

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A reconfigurable computing architecture using magnetic tunneling junction memories

2013 23rd International Conference on Field programmable Logic and Applications ◽

10.1109/fpl.2013.6645616 ◽

2013 ◽

Cited By ~ 2

Author(s):

Victor Silva ◽

Jorge Fernandes ◽

Mario Vestias ◽

Horacio Neto

Keyword(s):

Reconfigurable Computing ◽

Tunneling Junction ◽

Computing Architecture ◽

Magnetic Tunneling Junction ◽

Magnetic Tunneling

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Novel Magnetic Tunneling Junction Memory Cell With Negative Capacitance-Amplified Voltage-Controlled Magnetic Anisotropy Effect

IEEE Transactions on Electron Devices ◽

10.1109/ted.2017.2761877 ◽

2017 ◽

Vol 64 (12) ◽

pp. 4919-4927 ◽

Cited By ~ 3

Author(s):

Lang Zeng ◽

Tianqi Gao ◽

Deming Zhang ◽

Shouzhong Peng ◽

Lezhi Wang ◽

...

Keyword(s):

Magnetic Anisotropy ◽

Memory Cell ◽

Negative Capacitance ◽

Tunneling Junction ◽

Anisotropy Effect ◽

Magnetic Tunneling Junction ◽

Magnetic Tunneling

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Design of Perpendicular Magnetic-Tunneling-Junction Spin-Valve Including [Co/Pt]n Free Layer As Bulk Perpendicular Magnetic Anisotropy

ECS Meeting Abstracts ◽

10.1149/ma2018-02/18/754 ◽

2018 ◽

Keyword(s):

Magnetic Anisotropy ◽

Spin Valve ◽

Perpendicular Magnetic Anisotropy ◽

Tunneling Junction ◽

Free Layer ◽

Magnetic Tunneling Junction ◽

Magnetic Tunneling

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Improved Etch Characteristics of Magnetic Tunneling Junction Materials by Using Helium

ECS Journal of Solid State Science and Technology ◽

10.1149/2.0151709jss ◽

2017 ◽

Vol 6 (9) ◽

pp. N148-N154 ◽

Cited By ~ 4

Author(s):

Sungwoo Park ◽

Kyungchae Yang ◽

Hoseok Lee ◽

Dongwoo Kim ◽

Jongung Baek ◽

...

Keyword(s):

Tunneling Junction ◽

Magnetic Tunneling Junction ◽

Magnetic Tunneling

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Rashba Spin-Orbit Effect on Traversal Time in Parabolic-Well Magnetic Tunneling Junction

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.707.338 ◽

2014 ◽

Vol 707 ◽

pp. 338-342

Author(s):

Zheng Huang

Keyword(s):

Orbit Interaction ◽

Tunneling Time ◽

Tunnel Barrier ◽

Spin Orbit ◽

Tunneling Junction ◽

Spin Orbit Interaction ◽

Spin Tunneling ◽

Rashba Spin ◽

Magnetic Tunneling Junction ◽

Magnetic Tunneling

Based on the phase time definition,we study theoretically the transmission coefficients and the spin-tunneling time in parabolic-well magnetic tunneling junction with a tunnel barrier in the presence of Rashba spin-orbit interaction. The significant quantum size, quantum coherence, and Rashba spin-orbit interaction are considered simultaneously. It is found that the tunneling time strongly depends on the spin orientation of tunneling electrons. We also find that as the length of the semiconductor increases, the spin tunneling time shows curved increase. It exhibits useful instructions for the design of spin electronic devices.

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