Magnetic tunneling junction based magnetic field sensors: Role of shape anisotropy versus free layer thickness

Lubna R. Shah; Nupur Bhargava; Sangcheol Kim; Ryan Stearrett; Xiaoming Kou; Xiaolian Sun; Shouheng Sun; James Kolodzey; Edmund R. Nowak; John Q. Xiao

doi:10.1063/1.3563096

Magnetic tunneling junction based magnetic field sensors: Role of shape anisotropy versus free layer thickness

Journal of Applied Physics ◽

10.1063/1.3563096 ◽

2011 ◽

Vol 109 (7) ◽

pp. 07C731 ◽

Cited By ~ 8

Author(s):

Lubna R. Shah ◽

Nupur Bhargava ◽

Sangcheol Kim ◽

Ryan Stearrett ◽

Xiaoming Kou ◽

...

Keyword(s):

Magnetic Field ◽

Layer Thickness ◽

Shape Anisotropy ◽

Tunneling Junction ◽

Free Layer ◽

Magnetic Field Sensors ◽

Magnetic Tunneling Junction ◽

Magnetic Tunneling

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Design of Perpendicular Magnetic-Tunneling-Junction Spin-Valve Including [Co/Pt]n Free Layer As Bulk Perpendicular Magnetic Anisotropy

ECS Meeting Abstracts ◽

10.1149/ma2018-02/18/754 ◽

2018 ◽

Keyword(s):

Magnetic Anisotropy ◽

Spin Valve ◽

Perpendicular Magnetic Anisotropy ◽

Tunneling Junction ◽

Free Layer ◽

Magnetic Tunneling Junction ◽

Magnetic Tunneling

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Impact of sputtering condition for tungsten on magnetic and transport properties of magnetic tunneling junction with CoFeB/W/CoFeB free layer

2017 IEEE International Magnetics Conference (INTERMAG) ◽

10.1109/intmag.2017.8008047 ◽

2017 ◽

Author(s):

H. Honjo ◽

H. Sato ◽

S. Ikeda ◽

T. Watanabe ◽

S. Miura ◽

...

Keyword(s):

Transport Properties ◽

Tunneling Junction ◽

Free Layer ◽

Magnetic Tunneling Junction ◽

Magnetic Tunneling

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Impact of Tungsten Sputtering Condition on Magnetic and Transport Properties of Double-MgO Magnetic Tunneling Junction With CoFeB/W/CoFeB Free Layer

IEEE Transactions on Magnetics ◽

10.1109/tmag.2017.2701838 ◽

2017 ◽

Vol 53 (11) ◽

pp. 1-4 ◽

Cited By ~ 9

Author(s):

H. Honjo ◽

S. Ikeda ◽

H. Sato ◽

K. Nishioka ◽

T. Watanabe ◽

...

Keyword(s):

Transport Properties ◽

Tunneling Junction ◽

Free Layer ◽

Magnetic Tunneling Junction ◽

Magnetic Tunneling

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Dependency of tunneling magnetoresistance ratio on Pt seed-layer thickness for double MgO perpendicular magnetic tunneling junction spin-valves with a top Co2Fe6B2free layerex-situannealed at 400 °C

Nanotechnology ◽

10.1088/0957-4484/27/48/485203 ◽

2016 ◽

Vol 27 (48) ◽

pp. 485203 ◽

Cited By ~ 3

Author(s):

Yasutaka Takemura ◽

Du-Yeong Lee ◽

Seung-Eun Lee ◽

Jea-Gun Park

Keyword(s):

Layer Thickness ◽

Seed Layer ◽

Spin Valves ◽

Tunneling Magnetoresistance ◽

Tunneling Junction ◽

Magnetoresistance Ratio ◽

Magnetic Tunneling Junction ◽

Magnetic Tunneling ◽

Seed Layer Thickness

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Tunneling-Magnetoresistance Ratio Comparison of MgO-Based Perpendicular-Magnetic-Tunneling-Junction Spin Valve Between Top and Bottom Co2Fe6B2 Free Layer Structure

Nanoscale Research Letters ◽

10.1186/s11671-016-1637-9 ◽

2016 ◽

Vol 11 (1) ◽

Cited By ~ 7

Author(s):

Du-Yeong Lee ◽

Seung-Eun Lee ◽

Tae-Hun Shim ◽

Jea-Gun Park

Keyword(s):

Layer Structure ◽

Spin Valve ◽

Tunneling Magnetoresistance ◽

Tunneling Junction ◽

Free Layer ◽

Magnetoresistance Ratio ◽

Magnetic Tunneling Junction ◽

Magnetic Tunneling

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Magnetic tunneling junction with Fe/NiFeB free layer for magnetic logic circuits

Journal of Applied Physics ◽

10.1063/1.3675268 ◽

2012 ◽

Vol 111 (7) ◽

pp. 07C709 ◽

Cited By ~ 2

Author(s):

H. Honjo ◽

S. Fukami ◽

R. Nebashi ◽

N. Ishiwata ◽

S. Miura ◽

...

Keyword(s):

Logic Circuits ◽

Tunneling Junction ◽

Free Layer ◽

Magnetic Tunneling Junction ◽

Magnetic Tunneling

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Magnetic-field-free terahertz emission from a magnetic tunneling junction

Japanese Journal of Applied Physics ◽

10.7567/1347-4065/ab3b75 ◽

2019 ◽

Vol 58 (9) ◽

pp. 090913 ◽

Cited By ~ 2

Author(s):

Jugeng Li ◽

Zuanming Jin ◽

Bangju Song ◽

Shunnong Zhang ◽

Chenyang Guo ◽

...

Keyword(s):

Magnetic Field ◽

Tunneling Junction ◽

Terahertz Emission ◽

Magnetic Tunneling Junction ◽

Magnetic Tunneling

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The Electrical Characterization of Magnetic Tunneling Junction Cells Using Conductive Atomic Force Microscopy with an External Magnetic Field Generator

Transactions on Electrical and Electronic Materials ◽

10.4313/teem.2010.11.6.271 ◽

2010 ◽

Vol 11 (6) ◽

pp. 271-274 ◽

Cited By ~ 2

Author(s):

Jin-Hee Heo

Keyword(s):

Magnetic Field ◽

Electrical Characterization ◽

Tunneling Junction ◽

Conductive Atomic Force Microscopy ◽

Force Microscopy ◽

Atomic Force ◽

Magnetic Tunneling Junction ◽

Magnetic Field Generator ◽

Magnetic Tunneling

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A reconfigurable computing architecture using magnetic tunneling junction memories

2013 23rd International Conference on Field programmable Logic and Applications ◽

10.1109/fpl.2013.6645616 ◽

2013 ◽

Cited By ~ 2

Author(s):

Victor Silva ◽

Jorge Fernandes ◽

Mario Vestias ◽

Horacio Neto

Keyword(s):

Reconfigurable Computing ◽

Tunneling Junction ◽

Computing Architecture ◽

Magnetic Tunneling Junction ◽

Magnetic Tunneling

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Novel Magnetic Tunneling Junction Memory Cell With Negative Capacitance-Amplified Voltage-Controlled Magnetic Anisotropy Effect

IEEE Transactions on Electron Devices ◽

10.1109/ted.2017.2761877 ◽

2017 ◽

Vol 64 (12) ◽

pp. 4919-4927 ◽

Cited By ~ 3

Author(s):

Lang Zeng ◽

Tianqi Gao ◽

Deming Zhang ◽

Shouzhong Peng ◽

Lezhi Wang ◽

...

Keyword(s):

Magnetic Anisotropy ◽

Memory Cell ◽

Negative Capacitance ◽

Tunneling Junction ◽

Anisotropy Effect ◽

Magnetic Tunneling Junction ◽

Magnetic Tunneling

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