Silicide phase formation in Ni∕Si system: Depth-resolved positron annihilation and Rutherford backscattering study

2006 ◽  
Vol 99 (3) ◽  
pp. 033512 ◽  
Author(s):  
S. Abhaya ◽  
G. Amarendra ◽  
B. K. Panigrahi ◽  
K. G. M. Nair
Keyword(s):  
Positron Annihilation ◽  
Phase Formation ◽  
Rutherford Backscattering ◽  
Silicide Phase

Ion-beam-induced recrystallization in Si(100) studied with slow positron annihilation and Rutherford backscattering and channeling

1993 ◽  
Vol 70 (1) ◽  
pp. 45-48 ◽  
Author(s):  
N. Hayashi ◽  
R. Suzuki ◽  
M. Hasegawa ◽  
N. Kobayashi ◽  
S. Tanigawa ◽  
...  
Keyword(s):  
Positron Annihilation ◽  
Ion Beam ◽  
Rutherford Backscattering ◽  
Slow Positron

Gettering of Cu to hydrogen-induced cavities in Si

1996 ◽  
Vol 74 (S1) ◽  
pp. 248-251 ◽  
Author(s):  
K. C. Hall ◽  
R. D. Goldberg ◽  
T. D. Lowes ◽  
P. J. Simpson ◽  
I. V. Mitchell ◽  
...  
Keyword(s):  
Positron Annihilation ◽  
Electron Micrographs ◽  
Room Temperature ◽  
Diffusion Profile ◽  
Rutherford Backscattering ◽  
Transmission Electron Micrographs ◽  
Transmission Electron

Gettering sites comprising dislocations and voids have been formed in silicon at a depth of 0.8 μm by room-temperature implantation with 80 keV energy protons to a fluence of 3 × 1016 cm−2, followed by annealing at a temperature of 800 °C for 20 min. Copper was evaporated onto the Si surface then diffused by heating at 600 °C for times between 5 and 60 min. Subsequently, positron annihilation measurements were used to profile the samples for void and (or) vacancy content. Rutherford backscattering quantified metal trapping out of the diffusion profile to the gettering sites. Transmission electron micrographs identified Cu trapping at both dislocations and voids. Cavities exhibit different morphologies between the empty (void) and filled condition; the latter are strongly faceted and found to contain bulk silicide.

Phase Formation and Kinetic Processes in Silicide Growth.

1983 ◽  
Vol 25 ◽  
Author(s):  
G. Ottaviani
Keyword(s):  
Boundary Conditions ◽  
Phase Formation ◽  
Growth Kinetics ◽  
Metal Layer ◽  
Silicide Phase ◽  
Reaction Products ◽  
Silicon Structures ◽  
Silicide Growth ◽  
Kinetic Processes ◽  
Kinetics Of

ABSTRACTTwenty years of research have now been devoted to investigating reaction products obtained by annealing metal-layer/silicon structures. A wide variety of cases have been analyzsed and a considerable amount of data has been produced. Despite the vast amount of information available, several aspects concerning phase formation and kinetic processes are not yet well established. The purpose of this paper is to investigate the mechanisms of phase formation and to show the importance of kinetic factors in the appearance of various compounds. Results will be shown for a single metal layer deposited on silicon, for bilayers. and for alloys. Depending upon the starting structure, metal-rich or silicon-rich silicides can be formed. Moreover, by modifying the boundary conditions, it is possible to change the growth kinetics of the silicide phase that forms.

scholarly journals In-situX-ray diffraction measurements for monitoring carbide and silicide phase formation

2006 ◽  
Vol 62 (a1) ◽  
pp. s114-s114
Author(s):  
W. P. Leroy ◽  
D. Deduytsche ◽  
C. Detavernier ◽  
R. L. Van Meirhaeghe ◽  
D. Poelman ◽  
...  
Keyword(s):  
Phase Formation ◽  
Silicide Phase

In situ real-time studies of nickel silicide phase formation

2001 ◽  
Vol 19 (2) ◽  
pp. 376 ◽  
Author(s):  
M. Tinani ◽  
A. Mueller ◽  
Y. Gao ◽  
E. A. Irene ◽  
Y. Z. Hu ◽  
...  
Keyword(s):  
Real Time ◽  
Phase Formation ◽  
Nickel Silicide ◽  
Silicide Phase

Phase Formation of Platinum Silicides Formed by Ion Implantation

1991 ◽  
Vol 235 ◽  
Author(s):  
Nader M. Kalkhoran ◽  
F. Namavar ◽  
D. Perry ◽  
E. Cortesi
Keyword(s):  
Ion Implantation ◽  
Phase Formation ◽  
Silicide Phase ◽  
Substrate Orientation ◽  
Platinum Silicide ◽  
Annealing Conditions ◽  
Ion Implanted

ABSTRACTWe have studied the formation of platinum silicide layers by ion implantation and annealing, and have determined the dependence of platinum silicide phase formation on ion implantation conditions and substrate orientation. The results indicate that in most cases, the ion implanted layer consists of PtSi phase. However, depending on the implantation and annealing conditions and substrate orientation, other phases, including Pt2Si, Pt3Si, and Pt12Si5, as well as Si and Pt microcrystals, also form.

Sign in / Sign up

Export Citation Format

Share Document