Ti and Co silicide phase formation and transformations on deep-sub-micron gates for ULSI applications

1998 ◽  
Author(s):  
Jorge A. Kittl ◽  
Qi-Zhong Hong
Keyword(s):  
Phase Formation ◽  
Silicide Phase

Phase Formation and Kinetic Processes in Silicide Growth.

1983 ◽  
Vol 25 ◽  
Author(s):  
G. Ottaviani
Keyword(s):  
Boundary Conditions ◽  
Phase Formation ◽  
Growth Kinetics ◽  
Metal Layer ◽  
Silicide Phase ◽  
Reaction Products ◽  
Silicon Structures ◽  
Silicide Growth ◽  
Kinetic Processes ◽  
Kinetics Of

ABSTRACTTwenty years of research have now been devoted to investigating reaction products obtained by annealing metal-layer/silicon structures. A wide variety of cases have been analyzsed and a considerable amount of data has been produced. Despite the vast amount of information available, several aspects concerning phase formation and kinetic processes are not yet well established. The purpose of this paper is to investigate the mechanisms of phase formation and to show the importance of kinetic factors in the appearance of various compounds. Results will be shown for a single metal layer deposited on silicon, for bilayers. and for alloys. Depending upon the starting structure, metal-rich or silicon-rich silicides can be formed. Moreover, by modifying the boundary conditions, it is possible to change the growth kinetics of the silicide phase that forms.

scholarly journals In-situX-ray diffraction measurements for monitoring carbide and silicide phase formation

2006 ◽  
Vol 62 (a1) ◽  
pp. s114-s114
Author(s):  
W. P. Leroy ◽  
D. Deduytsche ◽  
C. Detavernier ◽  
R. L. Van Meirhaeghe ◽  
D. Poelman ◽  
...  
Keyword(s):  
Phase Formation ◽  
Silicide Phase

In situ real-time studies of nickel silicide phase formation

2001 ◽  
Vol 19 (2) ◽  
pp. 376 ◽  
Author(s):  
M. Tinani ◽  
A. Mueller ◽  
Y. Gao ◽  
E. A. Irene ◽  
Y. Z. Hu ◽  
...  
Keyword(s):  
Real Time ◽  
Phase Formation ◽  
Nickel Silicide ◽  
Silicide Phase

Phase Formation of Platinum Silicides Formed by Ion Implantation

1991 ◽  
Vol 235 ◽  
Author(s):  
Nader M. Kalkhoran ◽  
F. Namavar ◽  
D. Perry ◽  
E. Cortesi
Keyword(s):  
Ion Implantation ◽  
Phase Formation ◽  
Silicide Phase ◽  
Substrate Orientation ◽  
Platinum Silicide ◽  
Annealing Conditions ◽  
Ion Implanted

ABSTRACTWe have studied the formation of platinum silicide layers by ion implantation and annealing, and have determined the dependence of platinum silicide phase formation on ion implantation conditions and substrate orientation. The results indicate that in most cases, the ion implanted layer consists of PtSi phase. However, depending on the implantation and annealing conditions and substrate orientation, other phases, including Pt2Si, Pt3Si, and Pt12Si5, as well as Si and Pt microcrystals, also form.

Interdiffusion and Phase Formation During Thermal Annealing of Ti/Mo Bilayers on Si Substrates

1996 ◽  
Vol 427 ◽  
Author(s):  
A. Mouroux ◽  
S.-L. Zhang ◽  
W. Kaplan ◽  
S. Nygren ◽  
M. Östling ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Phase Formation ◽  
Metal Layer ◽  
Hexagonal Structure ◽  
Silicide Phase ◽  
Silicide Formation ◽  
Physical Separation ◽  
Subsequent Transformation ◽  
Si Substrates ◽  
Heavily Doped

AbstractThe formation of TiSi2 from deposited Ti layers on Si and the subsequent transformation of TiSi 2 from the C49 to the C54 phase have long been of concern, particular for the silicide formation on heavily doped, narrow polycrystalline Si lines. In this work, phase formation during rapid thermal annealing of Ti/Mo bilayers sequentially deposited on blanket Si wafers and on narrow polycrystalline Si lines (0.6 μm width) is studied. The Mo layer is always 0.5 nm thick, and the Ti either 45 nm or 60 nm. It is shown that the initial physical separation of Ti from Si by the interposed Mo layer leads to complete prevention of the formation of the C49 phase. Instead, a Mo-bearing silicide phase of hexagonal structure forms first, and the C54 phase nucleates and then grows on top of it via Si diffusion through the growing silicide layers. The significance of this finding is that the usual sequence for the formation of TiSi2,. e. the C49 phase forms as a result of the Ti-Si interaction and the C54 phase forms as the product of phase transformation, is altered by the interposition of a thin refractory metal layer, here Mo. The difficulties involved in nucleation and growth of the C54 phase are then overcome, yet by a different approach than the usually employed ones which rely on ion implantation to enhance the formation of the C49 phase and the subsequent transformation to the C54 phase.

Silicide phase formation by Mg deposition on amorphous Si. Ab initio calculations, growth process and thermal stability

2019 ◽  
Vol 778 ◽  
pp. 514-521
Author(s):  
S.A. Dotsenko ◽  
Yu.V. Luniakov ◽  
A.S. Gouralnik ◽  
A.K. Gutakovskii ◽  
N.G. Galkin
Keyword(s):  
Thermal Stability ◽  
Ab Initio Calculations ◽  
Ab Initio ◽  
Phase Formation ◽  
Growth Process ◽  
Silicide Phase ◽  
Amorphous Si
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