Surface passivation properties of boron-doped plasma-enhanced chemical vapor deposited hydrogenated amorphous silicon films on p-type crystalline Si substrates

2006 ◽  
Vol 88 (2) ◽  
pp. 022104 ◽  
Author(s):  
Stefaan De Wolf ◽  
Guy Beaucarne
Keyword(s):  
Amorphous Silicon ◽  
Surface Passivation ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Si Substrates ◽  
Boron Doped ◽  
Chemical Vapor Deposited ◽  
P Type ◽  
Hydrogenated Amorphous

Density of gap states in chemical‐vapor‐deposited hydrogenated amorphous silicon films

1986 ◽  
Vol 59 (9) ◽  
pp. 3122-3125 ◽  
Author(s):  
T. L. Chu ◽  
Shirley S. Chu ◽  
S. T. Ang ◽  
A. Duong ◽  
C. G. Hwuang
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Chemical Vapor Deposited ◽  
Gap States ◽  
Hydrogenated Amorphous

Effect of stress on the aluminum-induced crystallization of hydrogenated amorphous silicon films

2006 ◽  
Vol 21 (10) ◽  
pp. 2582-2586 ◽  
Author(s):  
Maruf Hossain ◽  
Husam H. Abu-Safe ◽  
Hameed Naseem ◽  
William D. Brown
Keyword(s):  
Amorphous Silicon ◽  
Initial Stress ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
Radius Of Curvature ◽  
Si Substrates ◽  
Before And After ◽  
Hydrogenated Amorphous ◽  
Induced Crystallization ◽  
Aluminum Induced Crystallization

The effect of stress, resulting from the presence of hydrogen, on the aluminum-induced crystallization of hydrogenated amorphous silicon films was studied. Layered thin films of hydrogenated and unhydrogenated amorphous silicon and aluminum, deposited by sputtering, were used to study this effect. The stress of the deposited films was determined by measuring the radius of curvature of c-Si substrates before and after deposition of the films. It was observed that unhydrogenated amorphous silicon films exhibit a high compressive stress compared with hydrogenated ones. The amount of stress is shown to decrease with increasing hydrogen content. It was also observed that aluminum always provides tensile stress. After the initial stress measurements, all the samples were annealed for 30 min at temperatures between 200 °C and 400 °C. X-ray diffraction was used to determine the crystallinity of the silicon films. The results of the study show that the temperature at which crystallization of amorphous silicon is initiated is lower for films with a lower initial stress.

Hydrogen Diffusion in Boron-Doped Hydrogenated Amorphous Silicon Films: Crystallization and Induced Structural Changes

2005 ◽  
Vol 864 ◽  
Author(s):  
F. Kail ◽  
A. Hadjadj ◽  
P. Roca i Cabarrocas
Keyword(s):  
Amorphous Silicon ◽  
Structural Changes ◽  
Hydrogen Diffusion ◽  
Hydrogen Plasma ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
Hydrogen Atoms ◽  
Boron Doped ◽  
Hydrogenated Amorphous ◽  
Positively Charged

AbstractWe have studied the evolution of the structure of boron-doped hydrogenated amorphous silicon films exposed to a hydrogen plasma. From the early stages of exposure, hydrogen diffuses and forms a thick H-rich subsurface. At longer times, hydrogen plasma leads to the formation of a microcrystalline layer via chemical transport without crystallization of the initial layer. We observe that the hydrogen content increases in the films during a plasma exposure and once the microcrystalline layer is formed hydrogen diffuses out of the sample accompanied with a decrease in the boron content. This effect can be attributed to the electric field developed within the heterojunction a-Si:H/μc-Si:H that drives the positively charged hydrogen atoms in the boron-doped layer towards the μc-Si:H layer.

Sign in / Sign up

Export Citation Format

Share Document