Rashba spin-orbit effect on traversal time in ferromagnetic/semiconductor/ferromagnetic heterojunction

2003 ◽  
Vol 93 (9) ◽  
pp. 5316-5320 ◽  
Author(s):  
Han-Chun Wu ◽  
Yong Guo ◽  
Xin-Yi Chen ◽  
Bing-Lin Gu
Keyword(s):  
Ferromagnetic Semiconductor ◽  
Spin Orbit ◽  
Traversal Time ◽  
Rashba Spin

SPIN POLARIZATION AND TUNNELING MAGNETORESISTANCE IN FERROMAGNETIC/SEMICONDUCTOR/FERROMAGNETIC HETEROSTRUCTURE

2008 ◽  
Vol 22 (27) ◽  
pp. 2667-2676 ◽  
Author(s):  
DE LIU ◽  
HONGMEI ZHANG
Keyword(s):  
Spin Polarization ◽  
Coupling Strength ◽  
Channel Length ◽  
Ferromagnetic Semiconductor ◽  
Orbit Coupling ◽  
Tunneling Magnetoresistance ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Rashba Spin ◽  
Left And Right

Based on the coherent quantum transport theory, the spin polarization and tunneling magnetoresistance for polarized electrons through ferromagnetic/semiconductor/ferromagnetic (FM/SM/FM) heterostructure are studied theoretically within the Landauer framework of ballistic transport. The significant quantum size, quantum coherent, angle between the magnetic moments of the left and right ferromagnets, and Rashba spin-orbit interaction are considered simultaneously. The results indicate that the spin polarization and tunneling magnetoresistance are periodic functions of the semiconductor channel length, quasiperiodic functions of the Rashba spin-orbit coupling strength, and depend on the relative orientation of the two magnetizations in the left and right ferromagnets. A moderate angle, semiconductor channel length, and Rashba spin-orbit coupling strength allow a giant spin polarization or tunneling magnetoresistance. The results may be of relevance for the implementation of quasi-one-dimensional spin-transistor devices.

scholarly journals Synthetic Rashba spin–orbit system using a silicon metal-oxide semiconductor

2021 ◽  
Author(s):  
Soobeom Lee ◽  
Hayato Koike ◽  
Minori Goto ◽  
Shinji Miwa ◽  
Yoshishige Suzuki ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Spin Orbit ◽  
Rashba Spin

scholarly journals Publisher Correction: Synthetic Rashba spin–orbit system using a silicon metal-oxide semiconductor

2021 ◽  
Author(s):  
Soobeom Lee ◽  
Hayato Koike ◽  
Minori Goto ◽  
Shinji Miwa ◽  
Yoshishige Suzuki ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Spin Orbit ◽  
Rashba Spin
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