Rashba spin-orbit effect on electronic transport in ferromagnetic/semiconductor/ferromagnetic nanostructures under an applied electric field

2005 ◽  
Vol 71 (1) ◽  
Author(s):  
Yu-Xian Li ◽  
Yong Guo ◽  
Bo-Zang Li
Keyword(s):  
Electric Field ◽  
Electronic Transport ◽  
Applied Electric Field ◽  
Ferromagnetic Semiconductor ◽  
Spin Orbit ◽  
Rashba Spin ◽  
Ferromagnetic Nanostructures

SPIN CURRENT INDUCED ELECTRIC FIELD IN A RASHBA QUANTUM WIRE

2010 ◽  
Vol 24 (07) ◽  
pp. 649-656
Author(s):  
XI FU ◽  
GUANGHUI ZHOU
Keyword(s):  
Electric Field ◽  
Current Density ◽  
Quantum Wire ◽  
Spin Current ◽  
Scattering Matrix ◽  
Orbit Coupling ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Rashba Spin

We investigate theoretically the spin current and spin current induced electric field in a weak Rashba spin-orbit coupling quantum wire (QW) using a definition for spin current by means of scattering matrix. It is found that there exists two non-zero linear spin current density elements which have oscillation peaks at the center of QW and their strengths can be changed by the number of propagation modes and Rashba constant, respectively. Moreover, the spin current induced electric field has also been calculated and its strength is measurable with present technology with which can be used to detect spin current.

TRANSPORT THROUGH INTERACTING AHARONOV–BOHM–CASHER INTERFEROMETERS

2011 ◽  
Vol 25 (22) ◽  
pp. 3019-3025
Author(s):  
QING-QIANG XU ◽  
BEN-LING GAO ◽  
SHI-JIE XIONG
Keyword(s):  
Magnetic Flux ◽  
Electronic Transport ◽  
Transport Processes ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Spin Filter ◽  
Rashba Spin ◽  
Mesoscopic Ring ◽  
Universal Regime ◽  
Aharonov Bohm

We investigate the transport properties of an interacting ring threaded by a magnetic flux and with Rashba spin-orbit coupling, based on a recently developed functional renormalized group technique. In the calculations of the electronic transport processes, the Coloumb On-site interactions are taken into account. For an interacting ring connected to two leads, we find that (i) for ΦAC = 0, the behavior of transmission zero at ΦAB = π is generic for the universal regime; (ii) for certain ΦAC and ΦAB, one can use the mesoscopic ring as spin filter even in the presence of the local interaction in the ring.

SPIN POLARIZATION AND TUNNELING MAGNETORESISTANCE IN FERROMAGNETIC/SEMICONDUCTOR/FERROMAGNETIC HETEROSTRUCTURE

2008 ◽  
Vol 22 (27) ◽  
pp. 2667-2676 ◽  
Author(s):  
DE LIU ◽  
HONGMEI ZHANG
Keyword(s):  
Spin Polarization ◽  
Coupling Strength ◽  
Channel Length ◽  
Ferromagnetic Semiconductor ◽  
Orbit Coupling ◽  
Tunneling Magnetoresistance ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Rashba Spin ◽  
Left And Right

Based on the coherent quantum transport theory, the spin polarization and tunneling magnetoresistance for polarized electrons through ferromagnetic/semiconductor/ferromagnetic (FM/SM/FM) heterostructure are studied theoretically within the Landauer framework of ballistic transport. The significant quantum size, quantum coherent, angle between the magnetic moments of the left and right ferromagnets, and Rashba spin-orbit interaction are considered simultaneously. The results indicate that the spin polarization and tunneling magnetoresistance are periodic functions of the semiconductor channel length, quasiperiodic functions of the Rashba spin-orbit coupling strength, and depend on the relative orientation of the two magnetizations in the left and right ferromagnets. A moderate angle, semiconductor channel length, and Rashba spin-orbit coupling strength allow a giant spin polarization or tunneling magnetoresistance. The results may be of relevance for the implementation of quasi-one-dimensional spin-transistor devices.

ELECTRON TRANSPORT THROUGH A MESOSCOPIC DEVICE WITH THE SPIN-ORBIT COUPLING SEMICONDUCTOR LEADS

2011 ◽  
Vol 25 (12) ◽  
pp. 1671-1680 ◽  
Author(s):  
SHU-GUANG CHENG ◽  
XIAO-JUAN ZHAO ◽  
PEI ZHAO
Keyword(s):  
Electron Transport ◽  
Electronic Transport ◽  
Function Method ◽  
Orbit Interaction ◽  
Orbit Coupling ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Rashba Spin ◽  
Non Equilibrium Green’S Function ◽  
Linear Conductance

The electronic transport through a mesoscopic confining region coupled to two spin-orbit coupling semiconductor leads is studied. We mainly focus on how the transport behaviors are affected by the Rashba spin-orbit interaction (SOI), which has been neglected in the previous theoretical papers but indeed exists in the semiconductor leads from the recent experimental results. By using Landauer–Büttiker formula and the non-equilibrium Green's function method, the linear conductance of this device is obtained. The numerical results exhibit that the conductance are similar for the two cases of the absence and the presence of the SOI. It means that the SOI in the leads does not qualitatively affects the transport behaviors. However, in detail, the peaks of the conductance are widened and enhanced by the SOI. In some specific cases, the widening and the enhancement could be very strong.

Rashba spin-orbit effect on traversal time in ferromagnetic/semiconductor/ferromagnetic heterojunction

2003 ◽  
Vol 93 (9) ◽  
pp. 5316-5320 ◽  
Author(s):  
Han-Chun Wu ◽  
Yong Guo ◽  
Xin-Yi Chen ◽  
Bing-Lin Gu
Keyword(s):  
Ferromagnetic Semiconductor ◽  
Spin Orbit ◽  
Traversal Time ◽  
Rashba Spin
Sign in / Sign up

Export Citation Format

Share Document