Key issues in trap-assisted low-frequency device noise simulation in nonlinear large-signal conditions

2005 ◽  
Author(s):  
F. Bonani
Keyword(s):  
Low Frequency ◽  
Large Signal ◽  
Noise Simulation ◽  
Key Issues ◽  
Device Noise

1/f Noise Behavior in Pentacene Organic Thin Film Transistors

1999 ◽  
Vol 598 ◽  
Author(s):  
P. V. Necliudov ◽  
D. J. Gundlach ◽  
T. N. Jackson ◽  
S. L. Rumyantsev ◽  
M. S. Shur
Keyword(s):  
Thin Film ◽  
Conducting Polymers ◽  
Thin Film Transistors ◽  
Low Frequency ◽  
Drain Current ◽  
Frequency Noise ◽  
Organic Thin Film ◽  
Amorphous Si ◽  
Parameter Values ◽  
Device Noise

ABSTRACTWe studied the low frequency noise in top-contact pentacene Thin Film Transistors (TFTs). The relative spectral noise density of the drain current fluctuations SI/I2 had a form of 1/f noise in the measured frequency range 1Hz - 3.5kHz.Our studies of the noise dependencies on the gate-source VGS and drain-source VDS voltages showed that the dependencies differed from those observed for conducting polymers and resembled those reported for crystalline Si n-MOSFETs.To compare the device noise level with those of other devices and materials, we extracted the Hooge parameter α. In order to calculate the total number of carriers we used a model simulating the device DC characteristics, similar to that for amorphous Si TFTs. The extracted Hooge parameter was 0.04. For an organic material this is an extremely small value, which is three orders of magnitude smaller that the Hooge parameter values reported for conducting polymers and only several times higher than the values for amorphous Si TFTs.

scholarly journals Active Structural Acoustic Control of an Active Casing Placed in a Corner

2019 ◽  
Vol 9 (6) ◽  
pp. 1059 ◽  
Author(s):  
Anna Chraponska ◽  
Stanislaw Wrona ◽  
Jaroslaw Rzepecki ◽  
Krzysztof Mazur ◽  
Marek Pawelczyk
Keyword(s):  
Active Noise Control ◽  
Low Frequency ◽  
Frequency Noise ◽  
Noise Emission ◽  
Sound Sources ◽  
Low Frequencies ◽  
Emission Efficiency ◽  
Active Noise ◽  
Acoustic Control ◽  
Device Noise

Electric appliances used in workplaces and everyday life often generate a low-frequency noise, which affects human body systems. Passive methods employed to reduce noise are not effective at low frequencies. The classical approach to active noise control practically involves the generation of local zones of quiet, whereas at other areas the noise is reinforced. Moreover, it usually requires a large number of secondary sound sources. Hence, an active casing approach has been developed. The active casing panels’ vibrations are controlled to reduce the device noise emission. Efficiency of this method has been previously confirmed by the authors and the results have been reported in multiple journal publications. However, in the previous research experiments, the active casing was placed at a distance from the enclosure walls. In this research, the active casing is located in a corner and such placement is intentionally used to facilitate the active control system’s operation. The noise reduction performance is investigated at multiple configurations, including a range of distances from the corner and different error microphone arrangements. The analysis of both primary and secondary paths is given. Advantages and drawbacks of different active casing configurations are presented and discussed.

Drain current transient and low-frequency dispersion characterizations in AlGaN/GaN HEMTs

2016 ◽  
Vol 8 (4-5) ◽  
pp. 663-672 ◽  
Author(s):  
Agostino Benvegnù ◽  
Davide Bisi ◽  
Sylvain Laurent ◽  
Matteo Meneghini ◽  
Gaudenzio Meneghesso ◽  
...  
Keyword(s):  
Deep Level ◽  
Low Frequency ◽  
Frequency Dispersion ◽  
Drain Current ◽  
High Electron Mobility Transistors ◽  
Current Transient ◽  
High Electron ◽  
Large Signal ◽  
Class Ab ◽  
Electron Mobility Transistors

This paper presents a detailed trap investigation based on combined pulsed I/V measurements, drain current transient (DCT) measurements and low-frequency dispersion measurements of transconductance (LF Y21) and output conductance (LF Y22). DCT characterization is carried out over a 7-decade time scale. LF Y21and Y22measurements are carried out over the frequency range from 100 Hz to 1 GHz. These combined measurements were performed at several temperatures for AlGaN/GaN high electron mobility transistors under class AB bias condition and allowed the extraction of the activation energy (Ea) and the capture cross section (σc) of the identified traps. Extensive measurements of these characteristics as a function of device bias are reported in this work to understand the dynamic trap behavior. This paper demonstrated a correlation between LF small-signal (LF Y21and Y22) and large-signal voltage steps (DCT) results. These measurements allow identifying the same 0.64 eV deep level, attributed to a native defect of GaN, possibly located in the buffer layer.

(Invited) Statistical Low-Frequency Noise Model for MOSFETs under Large Signal Cyclo-Stationary Excitation

2019 ◽  
Vol 28 (2) ◽  
pp. 287-298
Author(s):  
Gilson Wirth ◽  
Roberto Da Silva ◽  
P. Srinivasan ◽  
Ralf Brederlow
Keyword(s):  
Low Frequency ◽  
Noise Model ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Large Signal

Research of PFC Based on Boost Converter

2014 ◽  
Vol 556-562 ◽  
pp. 2063-2066
Author(s):  
Xiao Long Tan ◽  
Jia Zhou ◽  
Wen Bin Wang
Keyword(s):  
Power Factor ◽  
Low Frequency ◽  
Constant Load ◽  
Current Control ◽  
Voltage Regulator ◽  
Large Signal ◽  
Signal Model ◽  
High Power Factor ◽  
Wide Range ◽  
Average Current

Principles of traditional Boost PFC circuit are introduced. Based on average current control, a large signal model is obtained and turned into small signal model carrying constant load. And current regulator and voltage regulator are designed accordingly. Directing at strong non-linear characteristics of the circuit, this paper adopts double average method to analyze its low frequency stability. This converter can achieve high power factor in wide range of input and load power and simulation result shows that power factor is above 0.99.

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