(Invited) Statistical Low-Frequency Noise Model for MOSFETs under Large Signal Cyclo-Stationary Excitation

2019 ◽  
Vol 28 (2) ◽  
pp. 287-298
Author(s):  
Gilson Wirth ◽  
Roberto Da Silva ◽  
P. Srinivasan ◽  
Ralf Brederlow
Keyword(s):  
Low Frequency ◽  
Noise Model ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Large Signal

A physics-based low frequency noise model for MOSFETs under periodic large signal excitation

2006 ◽  
Vol 50 (4) ◽  
pp. 668-673 ◽  
Author(s):  
Ralf Brederlow ◽  
Jeongwook Koh ◽  
Roland Thewes
Keyword(s):  
Low Frequency ◽  
Noise Model ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Large Signal

Effect of Ge-Nanoislands on the Low-Frequency Noise in Si/SiOx/Ge Structures

2013 ◽  
Vol 854 ◽  
pp. 21-27 ◽  
Author(s):  
N.P. Garbar ◽  
Valeriya N. Kudina ◽  
V.S. Lysenko ◽  
S.V. Kondratenko ◽  
Yu.N. Kozyrev
Keyword(s):  
High Surface ◽  
Low Frequency ◽  
Noise Model ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Physical Processes ◽  
Noise Sources ◽  
Noise Component ◽  
First Time ◽  
Noise Models

Low-frequency noise of the structures with Ge-nanoclusters of rather high surface density grown on the oxidized silicon surface is investigated for the first time. It was revealed that the 1/f γ noise, where γ is close to unity, is the typical noise component. Nevertheless, the 1/f γ noise sources were found to be distributed nonuniformly upon the oxidized silicon structure with Ge-nanoclusters. The noise features revealed were analyzed in the framework of widely used noise models. However, the models used appeared to be unsuitable to explain the noise behavior of the structures studied. The physical processes that should be allowed for to develop the appropriate noise model are discussed.

New numerical low frequency noise model for front and buried oxide trap density characterization in FDSOI MOSFETs

2011 ◽  
Vol 88 (7) ◽  
pp. 1286-1290 ◽  
Author(s):  
J. El Husseini ◽  
F. Martinez ◽  
J. Armand ◽  
M. Bawedin ◽  
M. Valenza ◽  
...  
Keyword(s):  
Low Frequency ◽  
Trap Density ◽  
Noise Model ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Buried Oxide ◽  
Oxide Trap

scholarly journals Data-Driven Modeling of Low Frequency Noise Using Capture-Emission Energy Maps

2020 ◽  
Vol 11 (1) ◽  
pp. 356
Author(s):  
Jonghwan Lee
Keyword(s):  
Noise Analysis ◽  
Low Frequency ◽  
Gaussian Mixture ◽  
Noise Model ◽  
Accurate Estimation ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Sources ◽  
Emission Energy ◽  
Bias Temperature Instability

A new approach for modeling low frequency noise is presented to enable the predictions of noise behavior from negative bias temperature instability (NBTI). The noise model is based on a capture-emission energy (CEE) map describing the probability density function of widely distributed defect capture-emission activation energies. To enlarge the capture-emission energy window and to perform the accurate estimation of the recoverable component of CEE, the Gaussian mixture model (GMM) is applied to the CEE map. This approach provides an efficient identification of noise sources and an in-depth noise analysis under both stationary and cyclo-stationary conditions.

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