Low-frequency operation of avalanche diodes under large-signal conditions

1969 ◽  
Vol 5 (23) ◽  
pp. 583
Author(s):  
B. Culshaw
Keyword(s):  
Low Frequency ◽  
Large Signal ◽  
Avalanche Diodes

Drain current transient and low-frequency dispersion characterizations in AlGaN/GaN HEMTs

2016 ◽  
Vol 8 (4-5) ◽  
pp. 663-672 ◽  
Author(s):  
Agostino Benvegnù ◽  
Davide Bisi ◽  
Sylvain Laurent ◽  
Matteo Meneghini ◽  
Gaudenzio Meneghesso ◽  
...  
Keyword(s):  
Deep Level ◽  
Low Frequency ◽  
Frequency Dispersion ◽  
Drain Current ◽  
High Electron Mobility Transistors ◽  
Current Transient ◽  
High Electron ◽  
Large Signal ◽  
Class Ab ◽  
Electron Mobility Transistors

This paper presents a detailed trap investigation based on combined pulsed I/V measurements, drain current transient (DCT) measurements and low-frequency dispersion measurements of transconductance (LF Y21) and output conductance (LF Y22). DCT characterization is carried out over a 7-decade time scale. LF Y21and Y22measurements are carried out over the frequency range from 100 Hz to 1 GHz. These combined measurements were performed at several temperatures for AlGaN/GaN high electron mobility transistors under class AB bias condition and allowed the extraction of the activation energy (Ea) and the capture cross section (σc) of the identified traps. Extensive measurements of these characteristics as a function of device bias are reported in this work to understand the dynamic trap behavior. This paper demonstrated a correlation between LF small-signal (LF Y21and Y22) and large-signal voltage steps (DCT) results. These measurements allow identifying the same 0.64 eV deep level, attributed to a native defect of GaN, possibly located in the buffer layer.

(Invited) Statistical Low-Frequency Noise Model for MOSFETs under Large Signal Cyclo-Stationary Excitation

2019 ◽  
Vol 28 (2) ◽  
pp. 287-298
Author(s):  
Gilson Wirth ◽  
Roberto Da Silva ◽  
P. Srinivasan ◽  
Ralf Brederlow
Keyword(s):  
Low Frequency ◽  
Noise Model ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Large Signal

Large-signal time-domain modeling of avalanche diodes

1979 ◽  
Vol 26 (11) ◽  
pp. 1718-1728 ◽  
Author(s):  
P.A. Blakey ◽  
R.A. Giblin ◽  
A.J. Seeds
Keyword(s):  
Time Domain ◽  
Domain Modeling ◽  
Large Signal ◽  
Avalanche Diodes ◽  
Time Domain Modeling ◽  
Signal Time

Research of PFC Based on Boost Converter

2014 ◽  
Vol 556-562 ◽  
pp. 2063-2066
Author(s):  
Xiao Long Tan ◽  
Jia Zhou ◽  
Wen Bin Wang
Keyword(s):  
Power Factor ◽  
Low Frequency ◽  
Constant Load ◽  
Current Control ◽  
Voltage Regulator ◽  
Large Signal ◽  
Signal Model ◽  
High Power Factor ◽  
Wide Range ◽  
Average Current

Principles of traditional Boost PFC circuit are introduced. Based on average current control, a large signal model is obtained and turned into small signal model carrying constant load. And current regulator and voltage regulator are designed accordingly. Directing at strong non-linear characteristics of the circuit, this paper adopts double average method to analyze its low frequency stability. This converter can achieve high power factor in wide range of input and load power and simulation result shows that power factor is above 0.99.

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