Modeling capture, emission, and impact ionization of deep-level traps for Ga-As semi-insulating substrates

1991 ◽  
Vol 38 (4) ◽  
pp. 936-939 ◽  
Author(s):  
Q. Li ◽  
R.W. Dutton
Keyword(s):  
Impact Ionization ◽  
Deep Level ◽  
Insulating Substrates

Deep Level Investigation by Current and Capacitance Transient Spectroscopy in 4H-SiC MESFETs on Semi-Insulating Substrates

2004 ◽  
Vol 457-460 ◽  
pp. 1185-1188
Author(s):  
M. Gassoumi ◽  
N. Sghaier ◽  
I. Dermoul ◽  
F. Chekir ◽  
H. Maaref ◽  
...  
Keyword(s):  
Deep Level ◽  
Transient Spectroscopy ◽  
Capacitance Transient ◽  
Insulating Substrates

Improved performance of Ni/GaN Schottky barrier impact ionization avalanche transit time diode with n-type GaN deep level defects

2020 ◽  
Vol 36 (2) ◽  
pp. 025001
Author(s):  
Xiao-Yu Zhang ◽  
Lin-An Yang ◽  
Wen-lu Yang ◽  
Yang Li ◽  
Xiao-Hua Ma ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Transit Time ◽  
Impact Ionization ◽  
Deep Level ◽  
Improved Performance

LUMINESCENCE AND DEEP LEVEL STUDIES OF LINE DISLOCATIONS IN GALLIUM PHOSPHIDE

1983 ◽  
Vol 44 (C4) ◽  
pp. C4-233-C4-241
Author(s):  
B. Hamilton ◽  
A. R. Peaker ◽  
D. R. Wight
Keyword(s):  
Gallium Phosphide ◽  
Deep Level

Persistent Photoconductivity And Thermal Recovery Kinetics Of Low Energy Ar + Bombarded GaAs

1991 ◽  
Vol 223 ◽  
Author(s):  
A. Vaseashta ◽  
L. C. Burton
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Thermal Recovery ◽  
Low Energy ◽  
Persistent Photoconductivity ◽  
Transport Parameters ◽  
Excellent Correlation ◽  
Proposed Model ◽  
Transient Spectroscopy ◽  
Kinetics Of

ABSTRACTKinetics of persistent photoconductivity, photoquenching, and thermal and optical recovery observed in low energy Ar+ bombarded on (100) GaAs surfaces have been investigated. Rate and transport equations for these processes were derived and simulated employing transport parameters, trap locations and densities determined by deep level transient spectroscopy. Excellent correlation was obtained between the results of preliminary simulation and the experimentally observed values. The exponential decay of persistent photoconductivity response curve was determined to be due to metastable electron traps with longer lifetime and is consistent with an earlier proposed model.

Sign in / Sign up

Export Citation Format

Share Document