Silicon layer transfer using plasma hydrogenation

2005 ◽  
Vol 87 (11) ◽  
pp. 111910 ◽  
Author(s):  
Peng Chen ◽  
S. S. Lau ◽  
Paul K. Chu ◽  
K. Henttinen ◽  
T. Suni ◽  
...  
Keyword(s):  
Silicon Layer ◽  
Layer Transfer ◽  
Plasma Hydrogenation

Hydrogen Platelet Layer in Silicon Formed from Hydrogen Trapped onto Microbubbles of Gases

2002 ◽  
Vol 719 ◽  
Author(s):  
A.Y. Usenko ◽  
W.N. Carr ◽  
Bo Chen
Keyword(s):  
Silicon Wafer ◽  
Atomic Hydrogen ◽  
Microwave Plasma ◽  
Crystalline Silicon ◽  
Silicon Layer ◽  
Internal Surface ◽  
Layer Plane ◽  
Internal Surfaces ◽  
Buried Layer ◽  
Plasma Hydrogenation

AbstractFeatures of a process of delamination of crystalline silicon layer from silicon wafer along hydrogen platelet layer formed by microwave plasma hydrogenation are described. The process involves first making a buried layer of nuclei for hydrogen platelets. Ion implantation of inert or low-soluble gases is used to form the layer. The nuclei are microbubbles that appear along Rp plane of implanted ions. Results for argon, xenon, and krypton implantation are compared. Wafers thus processed with a dose of 1015cm-2 are then hydrogenated with a microwave plasma. During hydrogenation, an atomic hydrogen diffuses into the silicon wafer and collects onto internal surfaces of the microbubbles. Then the hydrogen increases the internal surface of the microbubbles by growing a platelet type extensions to the microbubbles. The extensions grow preferably along the buried layer plane. A silicon layer above the layer of grown platelets were delaminated through pre-bonding/cut/post-bonding sequence as in the Smart-cut process. The plasma hydrogenation of the trap layer may be used as a step in a process of fabricating of SOI wafers with a very thin top crystalline silicon layer. Also, implant doses needed to form the microbubble trap layer are much lower than doses of direct implantation of hydrogen in the Smart-cut process. Temperature range of 200°C to 400°C during the hydrogenation process allows effectively grow extended hydrogen platelets from the nuclei. Mechanisms of nucleation of platelets as extentions of microbubbles are suggested. Control of hydrogen outdiffusion/platelet growth with thermal trajectory during plasma processing is discussed.

Heterojunction solar cells produced by porous silicon layer transfer technology

2012 ◽  
Vol 108 (4) ◽  
pp. 929-934 ◽  
Author(s):  
Zhihao Yue ◽  
Honglie Shen ◽  
Lei Zhang ◽  
Bin Liu ◽  
Chao Gao ◽  
...  
Keyword(s):  
Solar Cells ◽  
Porous Silicon ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Layer Transfer ◽  
Heterojunction Solar Cells

scholarly journals Microwave enhanced ion-cut silicon layer transfer

2007 ◽  
Vol 101 (11) ◽  
pp. 114915 ◽  
Author(s):  
D. C. Thompson ◽  
T. L. Alford ◽  
J. W. Mayer ◽  
T. Höchbauer ◽  
J. K. Lee ◽  
...  
Keyword(s):  
Silicon Layer ◽  
Layer Transfer

scholarly journals Plasma hydrogenation of strained Si∕SiGe∕Si heterostructure for layer transfer without ion implantation

2005 ◽  
Vol 87 (9) ◽  
pp. 091902 ◽  
Author(s):  
Lin Shao ◽  
Yuan Lin ◽  
J. K. Lee ◽  
Q. X. Jia ◽  
Yongqiang Wang ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Layer Transfer ◽  
Strained Si ◽  
Plasma Hydrogenation

Fabrication Techniques for Thin-Film Silicon Layer Transfer

2019 ◽  
Vol 3 (6) ◽  
pp. 67-73 ◽  
Author(s):  
Susan Holl ◽  
Ravi Varasala ◽  
Harshdeep Jawanda ◽  
C. A. Colinge ◽  
K. D. Hobart ◽  
...  
Keyword(s):  
Thin Film ◽  
Silicon Layer ◽  
Layer Transfer ◽  
Thin Film Silicon

scholarly journals Investigation of plasma hydrogenation and trapping mechanism for layer transfer

2005 ◽  
Vol 86 (3) ◽  
pp. 031904 ◽  
Author(s):  
Peng Chen ◽  
Paul K. Chu ◽  
T. Höchbauer ◽  
J.-K. Lee ◽  
M. Nastasi ◽  
...  
Keyword(s):  
Layer Transfer ◽  
Trapping Mechanism ◽  
Plasma Hydrogenation

Single-Crystalline Silicon Layer Transfer to a Flexible Substrate Using Wafer Bonding

2010 ◽  
Vol 39 (10) ◽  
pp. 2233-2236 ◽  
Author(s):  
Ki Yeol Byun ◽  
Isabelle Ferain ◽  
Scott Song ◽  
Susan Holl ◽  
Cindy Colinge
Keyword(s):  
Wafer Bonding ◽  
Crystalline Silicon ◽  
Flexible Substrate ◽  
Silicon Layer ◽  
Single Crystalline Silicon ◽  
Layer Transfer ◽  
Single Crystalline

Polycrystalline silicon layer transfer by ion-cut

2003 ◽  
Vol 82 (10) ◽  
pp. 1544-1546 ◽  
Author(s):  
C. H. Yun ◽  
N. Quitoriano ◽  
N. W. Cheung
Keyword(s):  
Polycrystalline Silicon ◽  
Silicon Layer ◽  
Layer Transfer
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