Polycrystalline silicon layer transfer by ion-cut

2003 ◽  
Vol 82 (10) ◽  
pp. 1544-1546 ◽  
Author(s):  
C. H. Yun ◽  
N. Quitoriano ◽  
N. W. Cheung
Keyword(s):  
Polycrystalline Silicon ◽  
Silicon Layer ◽  
Layer Transfer

Effects of boron doping on non-linear properties of SOI with embedded polycrystalline silicon layer for RF applications

2020 ◽  
Vol 164 ◽  
pp. 107677 ◽  
Author(s):  
Xing Wei ◽  
Lei Zhu ◽  
Yongwei Chang ◽  
Nan Gao ◽  
Xin Su ◽  
...  
Keyword(s):  
Polycrystalline Silicon ◽  
Silicon Layer ◽  
Boron Doping ◽  
Non Linear ◽  
Rf Applications

Silicon layer transfer using plasma hydrogenation

2005 ◽  
Vol 87 (11) ◽  
pp. 111910 ◽  
Author(s):  
Peng Chen ◽  
S. S. Lau ◽  
Paul K. Chu ◽  
K. Henttinen ◽  
T. Suni ◽  
...  
Keyword(s):  
Silicon Layer ◽  
Layer Transfer ◽  
Plasma Hydrogenation

4408385 Semiconductor integrated circuit with implanted resistor element in polycrystalline silicon layer

1984 ◽  
Vol 24 (1) ◽  
pp. 192
Author(s):  
RaoGR Mohan ◽  
JohnS Stanczak ◽  
Jih-chan Lien ◽  
Shyam Bhatia
Keyword(s):  
Integrated Circuit ◽  
Polycrystalline Silicon ◽  
Silicon Layer

Residual Ion Implantation Damage at Source/Drain Junctions of Excimer Laser Annealed Polycrystalline Silicon Thin Film Transistor

2002 ◽  
Vol 715 ◽  
Author(s):  
Kee-Chan Park ◽  
Jae-Shin Kim ◽  
Woo-Jin Nam ◽  
Min-Koo Han
Keyword(s):  
Thin Film ◽  
Ion Implantation ◽  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Thin Film Transistor ◽  
Silicon Layer ◽  
Silicon Thin Film ◽  
Cross Sectional ◽  
Implantation Damage ◽  
Transmission Electron

AbstractResidual ion implantation damage at source/drain junctions of excimer laser annealed polycrystalline silicon (poly-Si) thin film transistor (TFT) was investigated by high-resolution transmission electron microscopy (HR-TEM). Cross-sectional TEM observation showed that XeCl excimer laser (λ=308 nm) energy decreased considerably at the source/drain junctions of top-gated poly-Si TFT due to laser beam diffraction at the gate electrode edges and that the silicon layer amorphized by ion implantation, was not completely annealed at the juncions. The HR-TEM observation showed severe lattice disorder at the junctions of poly-Si TFT.

Heterojunction solar cells produced by porous silicon layer transfer technology

2012 ◽  
Vol 108 (4) ◽  
pp. 929-934 ◽  
Author(s):  
Zhihao Yue ◽  
Honglie Shen ◽  
Lei Zhang ◽  
Bin Liu ◽  
Chao Gao ◽  
...  
Keyword(s):  
Solar Cells ◽  
Porous Silicon ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Layer Transfer ◽  
Heterojunction Solar Cells
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