scholarly journals Plasma hydrogenation of strained Si∕SiGe∕Si heterostructure for layer transfer without ion implantation

2005 ◽  
Vol 87 (9) ◽  
pp. 091902 ◽  
Author(s):  
Lin Shao ◽  
Yuan Lin ◽  
J. K. Lee ◽  
Q. X. Jia ◽  
Yongqiang Wang ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Layer Transfer ◽  
Strained Si ◽  
Plasma Hydrogenation

Novel Source Heterojunction Structures with Relaxed-/Strained-Layers for Quasi-Ballistic CMOS Transistors

2011 ◽  
Vol 470 ◽  
pp. 72-78 ◽  
Author(s):  
Tomohisa Mizuno ◽  
Mitsuo Hasegawa ◽  
Toshiyuki Sameshima
Keyword(s):  
Ion Implantation ◽  
Complementary Metal Oxide Semiconductor ◽  
Energy Difference ◽  
Oxide Semiconductor ◽  
Recoil Energy ◽  
The Novel ◽  
Mos Transistors ◽  
Oxide Interface ◽  
Strained Si ◽  
Strained Layers

We have studied new abrupt-source-relaxed/strained semiconductor-heterojunction structures for quasi-ballistic complementary-metal-oxide-semiconductor (CMOS) devices, by locally controlling the strain of a single strained semiconductor. Appling O+ ion implantation recoil energy to the strained semiconductor/buried oxide interface, Raman analysis of the strained layers indicates that we have successfully relaxed both strained-Si-on-insulator (SSOI) substrates for n-MOS and SiGe-on-insulator (SGOI) substrates for p-MOS without poly crystallizing the semiconductor layers, by optimizing O+ ion implantation conditions. As a result, it is considered that the source conduction and valence band offsets EC and EV can be realized by the energy difference in the source Si/channel-strained Si and the source-relaxed SiGe/channel-strained SiGe layers, respectively. The device simulator, considering the tunneling effects at the source heterojunction, shows that the transconductance of sub-10 nm source heterojunction MOS transistors (SHOT) continues to increase with increasing EC. Therefore, SHOT structures with the novel source heterojunction are very promising for future quasi-ballistic CMOS devices.

Silicon layer transfer using plasma hydrogenation

2005 ◽  
Vol 87 (11) ◽  
pp. 111910 ◽  
Author(s):  
Peng Chen ◽  
S. S. Lau ◽  
Paul K. Chu ◽  
K. Henttinen ◽  
T. Suni ◽  
...  
Keyword(s):  
Silicon Layer ◽  
Layer Transfer ◽  
Plasma Hydrogenation

Strained Silicon On Insulator wafers made by the Smart Cut™ technology

2004 ◽  
Vol 809 ◽  
Author(s):  
B. Ghyselen ◽  
Y. Bogumilowicz ◽  
C. Aulnette ◽  
A. Abbadie ◽  
B. Osternaud ◽  
...  
Keyword(s):  
Thin Films ◽  
Hole Mobility ◽  
Silicon On Insulator ◽  
Strained Silicon ◽  
Layer Transfer ◽  
Strained Si ◽  
Engineered Substrates

ABSTRACTStrained Silicon On Insulator wafers are today envisioned as a natural and powerfulenhancement to standard SOI and/or bulk-like strained Si layers. For MOSFETs applications, thisnew technology potentially combines enhanced devices scalability allowed by thin films andenhanced electron and hole mobility in strained silicon. This paper is intended to demonstrate byexperimental results how a layer transfer technique such as the Smart Cut™ technology can be usedto obtain good quality tensile Strained Silicon On insulator wafers. Detailed experiments andcharacterizations will be used to characterize these engineered substrates and show that they arecompatible with the applications.

ELECTRICAL PROPERTIES OF Si1-X-YGeXCY FILMS GROWN BY ION IMPLANTATION AND SOLID PHASE EPITAXY

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4234-4237
Author(s):  
XUEQIN LIU ◽  
CONGMIAN ZHEN ◽  
YINYUE WANG ◽  
JING ZHANG ◽  
YUEJIAO PU ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Ion Implantation ◽  
Transport Properties ◽  
Hall Mobility ◽  
Carrier Transport ◽  
Lattice Strain ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Strained Si ◽  
Carrier Transport Properties

Si 0.875-y Ge 0.125 C y ternary alloy films were grown on Si by ion implantation of C into Si 0.875 Ge 0.125 layers and subsequent solid phase epitaxy. It was shown that C atoms were nearly incorporated into substitutional sites and no SiC was formed in the SiGeC films by optimal two-step annealing. There is a prominent effect of C contents on carrier transport properties. Compared with strained Si 0.875 Ge 0.125 film, enhanced Hall mobility has been obtained in partially and fully strain compensated Si 0.875-y Ge 0.125 C y layer due to the reduction of lattice strain.

Comparison of Defects Created by Plasma-Based Ion Implantation and Conventional Implantation of Hydrogen in Germanium

2007 ◽  
Vol 131-133 ◽  
pp. 101-106
Author(s):  
Marie-Laure David ◽  
Frédéric Pailloux ◽  
Michèl Drouet ◽  
Marie France Beaufort ◽  
Jean François Barbot ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Surface Roughness ◽  
Ion Implantation ◽  
Intermediate Temperature ◽  
Hydrogen Ions ◽  
Layer Transfer ◽  
Implantation Temperature ◽  
Transmission Electron

(001) n-type Ge has been implanted at given fluence and intermediate temperature with hydrogen ions using two processes: conventional in-line implantation and plasma based ion implantation. The as-created microstructure has been compared using transmission electron microscopy. In particular, it has been shown that the major differences observed are due to the implantation temperature, much higher during the PBII process. This suggests that plasma based ion implantation could be used for layer transfer in spite of a higher surface roughness observed after the PBII process.

Growth of strained-Si material using low-temperature Si combined with ion implantation technology

2010 ◽  
Vol 31 (6) ◽  
pp. 063001 ◽  
Author(s):  
Yang Hongdong ◽  
Yu Qi ◽  
Wang Xiangzhan ◽  
Li Jingchun ◽  
Ning Ning ◽  
...  
Keyword(s):  
Low Temperature ◽  
Ion Implantation ◽  
Strained Si

Study of Arsenic ion implantation of patterned strained Si NWs

2011 ◽  
Vol 60 (1) ◽  
pp. 31-36 ◽  
Author(s):  
R.A. Minamisawa ◽  
S. Habicht ◽  
L. Knoll ◽  
Q.T. Zhao ◽  
D. Buca ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Strained Si

Integration of Single-Crystal LiNbO3 Thin Film on Silicon by Laser Irradiation and Ion Implantation– Induced Layer Transfer

2006 ◽  
Vol 18 (12) ◽  
pp. 1533-1536 ◽  
Author(s):  
Y.-B. Park ◽  
B. Min ◽  
K. J. Vahala ◽  
H. A. Atwater
Keyword(s):  
Thin Film ◽  
Ion Implantation ◽  
Single Crystal ◽  
Laser Irradiation ◽  
Layer Transfer
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