scholarly journals Growth of p-type GaAs∕AlGaAs(111) quantum well infrared photodetector using solid source molecular-beam epitaxy

2005 ◽  
Vol 98 (5) ◽  
pp. 054905 ◽  
Author(s):  
H. Li ◽  
T. Mei ◽  
G. Karunasiri ◽  
W. J. Fan ◽  
D. H. Zhang ◽  
...  
2008 ◽  
Vol 23 (3) ◽  
pp. 035011 ◽  
Author(s):  
Gui Jiang Lin ◽  
Hong Kai Lai ◽  
Cheng Li ◽  
Song Yan Chen ◽  
Jin Zhong Yu

1989 ◽  
Vol 161 ◽  
Author(s):  
S. Hwang ◽  
Z. Yang ◽  
Y. Lansari ◽  
J.W. Han ◽  
J.W. Cook ◽  
...  

ABSTRACTPhotoassisted molecular beam epitaxy has been employed to successfully prepare p-type and n-type modulation-doped HgCdTe superlattices. The samples were grown at 170°C. In this paper, we report details of the MBE growth experiments and describe the optical and electrical properties that these new multilayered quantum well structures of HgCdTe possess.


2007 ◽  
Vol 50 (2-3) ◽  
pp. 119-123 ◽  
Author(s):  
T. Mei ◽  
H. Li ◽  
G. Karunasiri ◽  
W.J. Fan ◽  
D.H. Zhang ◽  
...  

2011 ◽  
Vol 7 (3) ◽  
pp. 175-177 ◽  
Author(s):  
Jin-tao Li ◽  
Song-yan Chen ◽  
Dong-feng Qi ◽  
Wei Huang ◽  
Cheng Li ◽  
...  

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