Growth of p-type GaAs∕AlGaAs(111) quantum well infrared photodetector using solid source molecular-beam epitaxy
1999 ◽
Vol 38
(Part 2, No. 4A)
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pp. L360-L362
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2008 ◽
Vol 23
(3)
◽
pp. 035011
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2007 ◽
Vol 50
(2-3)
◽
pp. 119-123
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Keyword(s):
1994 ◽
Keyword(s):
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