Normal incidence p-type strained-layer In0.3Ga0.7As/In0.52Al0.48As quantum well infrared photodetector with background limited performance at 77 K

1994 ◽  
Author(s):  
Sheng S. Li ◽  
Yanhua H. Wang ◽  
Jerome T. Chu ◽  
Pin Ho
Keyword(s):  
Quantum Well ◽  
Normal Incidence ◽  
Infrared Photodetector ◽  
Strained Layer ◽  
Quantum Well Infrared Photodetector ◽  
P Type

Normal incidence silicon doped p-type GaAs/AlGaAs quantum-well infrared photodetector on (111)A substrate

2007 ◽  
Vol 50 (2-3) ◽  
pp. 119-123 ◽  
Author(s):  
T. Mei ◽  
H. Li ◽  
G. Karunasiri ◽  
W.J. Fan ◽  
D.H. Zhang ◽  
...  
Keyword(s):  
Quantum Well ◽  
Normal Incidence ◽  
Infrared Photodetector ◽  
Quantum Well Infrared Photodetector ◽  
Silicon Doped ◽  
P Type

Medium‐wavelength, normal‐incidence, p‐type Si/SiGe quantum well infrared photodetector with background limited performance up to 85 K

1996 ◽  
Vol 69 (22) ◽  
pp. 3372-3374 ◽  
Author(s):  
P. Kruck ◽  
M. Helm ◽  
T. Fromherz ◽  
G. Bauer ◽  
J. F. Nützel ◽  
...  
Keyword(s):  
Quantum Well ◽  
Normal Incidence ◽  
Infrared Photodetector ◽  
Quantum Well Infrared Photodetector ◽  
P Type

scholarly journals Growth of p-type GaAs∕AlGaAs(111) quantum well infrared photodetector using solid source molecular-beam epitaxy

2005 ◽  
Vol 98 (5) ◽  
pp. 054905 ◽  
Author(s):  
H. Li ◽  
T. Mei ◽  
G. Karunasiri ◽  
W. J. Fan ◽  
D. H. Zhang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Infrared Photodetector ◽  
Quantum Well Infrared Photodetector ◽  
P Type

Preliminary design of a tensile-strained p-type Si/SiGe quantum well infrared photodetector

2008 ◽  
Vol 23 (3) ◽  
pp. 035011 ◽  
Author(s):  
Gui Jiang Lin ◽  
Hong Kai Lai ◽  
Cheng Li ◽  
Song Yan Chen ◽  
Jin Zhong Yu
Keyword(s):  
Quantum Well ◽  
Preliminary Design ◽  
Infrared Photodetector ◽  
Quantum Well Infrared Photodetector ◽  
P Type
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