Study of Arsenic ion implantation of patterned strained Si NWs

2011 ◽  
Vol 60 (1) ◽  
pp. 31-36 ◽  
Author(s):  
R.A. Minamisawa ◽  
S. Habicht ◽  
L. Knoll ◽  
Q.T. Zhao ◽  
D. Buca ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Strained Si

Novel Source Heterojunction Structures with Relaxed-/Strained-Layers for Quasi-Ballistic CMOS Transistors

2011 ◽  
Vol 470 ◽  
pp. 72-78 ◽  
Author(s):  
Tomohisa Mizuno ◽  
Mitsuo Hasegawa ◽  
Toshiyuki Sameshima
Keyword(s):  
Ion Implantation ◽  
Complementary Metal Oxide Semiconductor ◽  
Energy Difference ◽  
Oxide Semiconductor ◽  
Recoil Energy ◽  
The Novel ◽  
Mos Transistors ◽  
Oxide Interface ◽  
Strained Si ◽  
Strained Layers

We have studied new abrupt-source-relaxed/strained semiconductor-heterojunction structures for quasi-ballistic complementary-metal-oxide-semiconductor (CMOS) devices, by locally controlling the strain of a single strained semiconductor. Appling O+ ion implantation recoil energy to the strained semiconductor/buried oxide interface, Raman analysis of the strained layers indicates that we have successfully relaxed both strained-Si-on-insulator (SSOI) substrates for n-MOS and SiGe-on-insulator (SGOI) substrates for p-MOS without poly crystallizing the semiconductor layers, by optimizing O+ ion implantation conditions. As a result, it is considered that the source conduction and valence band offsets EC and EV can be realized by the energy difference in the source Si/channel-strained Si and the source-relaxed SiGe/channel-strained SiGe layers, respectively. The device simulator, considering the tunneling effects at the source heterojunction, shows that the transconductance of sub-10 nm source heterojunction MOS transistors (SHOT) continues to increase with increasing EC. Therefore, SHOT structures with the novel source heterojunction are very promising for future quasi-ballistic CMOS devices.

ELECTRICAL PROPERTIES OF Si1-X-YGeXCY FILMS GROWN BY ION IMPLANTATION AND SOLID PHASE EPITAXY

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4234-4237
Author(s):  
XUEQIN LIU ◽  
CONGMIAN ZHEN ◽  
YINYUE WANG ◽  
JING ZHANG ◽  
YUEJIAO PU ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Ion Implantation ◽  
Transport Properties ◽  
Hall Mobility ◽  
Carrier Transport ◽  
Lattice Strain ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Strained Si ◽  
Carrier Transport Properties

Si 0.875-y Ge 0.125 C y ternary alloy films were grown on Si by ion implantation of C into Si 0.875 Ge 0.125 layers and subsequent solid phase epitaxy. It was shown that C atoms were nearly incorporated into substitutional sites and no SiC was formed in the SiGeC films by optimal two-step annealing. There is a prominent effect of C contents on carrier transport properties. Compared with strained Si 0.875 Ge 0.125 film, enhanced Hall mobility has been obtained in partially and fully strain compensated Si 0.875-y Ge 0.125 C y layer due to the reduction of lattice strain.

Growth of strained-Si material using low-temperature Si combined with ion implantation technology

2010 ◽  
Vol 31 (6) ◽  
pp. 063001 ◽  
Author(s):  
Yang Hongdong ◽  
Yu Qi ◽  
Wang Xiangzhan ◽  
Li Jingchun ◽  
Ning Ning ◽  
...  
Keyword(s):  
Low Temperature ◽  
Ion Implantation ◽  
Strained Si

scholarly journals Plasma hydrogenation of strained Si∕SiGe∕Si heterostructure for layer transfer without ion implantation

2005 ◽  
Vol 87 (9) ◽  
pp. 091902 ◽  
Author(s):  
Lin Shao ◽  
Yuan Lin ◽  
J. K. Lee ◽  
Q. X. Jia ◽  
Yongqiang Wang ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Layer Transfer ◽  
Strained Si ◽  
Plasma Hydrogenation

BF2+ ion implantation in strained-Si/SiGe/Si hetero-structures

2006 ◽  
Vol 242 (1-2) ◽  
pp. 630-632
Author(s):  
J. Morioka ◽  
S. Irieda ◽  
Y. Ishidoya ◽  
T. Inada ◽  
N. Sugii
Keyword(s):  
Ion Implantation ◽  
Strained Si

Characterization of Ultrathin Strained-Si Channel Layers of n-MOSFETs Using Transmission Electron Microscopy

2005 ◽  
Vol 864 ◽  
Author(s):  
Dalaver H. Anjum ◽  
Jian Li ◽  
Guangrui Xia ◽  
Judy L. Hoyt ◽  
Robert Hull
Keyword(s):  
Ion Implantation ◽  
Carrier Transport ◽  
Field Effect Transistors ◽  
Oxide Semiconductor ◽  
Threshold Region ◽  
Strained Si ◽  
Transmission Electron ◽  
Device Processing ◽  
Convergent Beam

AbstractStrained-Si based Field Effect Transistors (FETs) have enabled improvement of carrier transport in Metal Oxide Semiconductor (MOS)-based devices, both in the ON state of the device and in the sub-threshold region. This leads to devices with higher ratios of on-to-off current, improvements in the device sub-threshold slope, lower voltage operation, and carrier mobility enhancement. However, in order to understand the fundamental physics of these devices, it is important to address the stress conditions of the strained-Si channel layers after device processing, particularly after the ion-implantation process. In this work, we have studied Si+ self ion-implantation and thermally annealed strained-Si channel layers in n-MOSFETs. It has been observed that the density of defects in the strained-Si layer depends upon implant dose as well as thermal treatment. Using energy dispersive spectroscopy (EDS) spectra, it is found that Ge is present in the strained Si layer when analyzed after Si+ implantation and rapid thermal annealing. The presence of Ge in the strained Si channel layer causes relaxation of strain. This is verified by Convergent Beam Electron Diffraction (CBED) by measuring the lattice constant of the strained channel. It is concluded that electron mobility enhancements can be degraded in n- MOSFETs due to presence of both Ge up-diffusion and defects.

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