Development and analysis of low resistance ohmic contact to n-AlGaN/GaN HEMT

2007 ◽  
Vol 16 (2) ◽  
pp. 262-266 ◽  
Author(s):  
A. Soltani ◽  
A. BenMoussa ◽  
S. Touati ◽  
V. Hoël ◽  
J.-C. De Jaeger ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Low Resistance ◽  
Gan Hemt

Low resistance Ti/Si/Ti/Al/Ni/Au ohmic contact for AlGaN/GaN HEMT

2016 ◽  
Author(s):  
Stanislav A. Shostachenko ◽  
Roman V. Zakharchenko ◽  
Roman V. Ryzhuk ◽  
Darya A. Kulyamina ◽  
Nikolay I. Kargin
Keyword(s):  
Ohmic Contact ◽  
Low Resistance ◽  
Gan Hemt

Low resistance ohmic contact onn‐CdTe

1994 ◽  
Vol 65 (4) ◽  
pp. 475-477 ◽  
Author(s):  
D. Brun ◽  
B. Daudin ◽  
E. Ligeon
Keyword(s):  
Ohmic Contact ◽  
Low Resistance

Low-Temperature Ohmic Contact Formation in AlN/GaN HEMT Using Microwave Annealing

2017 ◽  
Vol 64 (3) ◽  
pp. 1385-1389 ◽  
Author(s):  
Lin-Qing Zhang ◽  
Zhuo Liu ◽  
Sheng-Xun Zhao ◽  
Min-Zhi Lin ◽  
Peng-Fei Wang
Keyword(s):  
Low Temperature ◽  
Ohmic Contact ◽  
Contact Formation ◽  
Microwave Annealing ◽  
Gan Hemt ◽  
Ohmic Contact Formation

Low-Resistance Ohmic Contact Formation by Laser Annealing of N-Implanted 4H-SiC

2020 ◽  
Vol 1004 ◽  
pp. 718-724
Author(s):  
Carsten Hellinger ◽  
Oleg Rusch ◽  
Mathias Rommel ◽  
Anton J. Bauer ◽  
Tobias Erlbacher
Keyword(s):  
Crystal Structure ◽  
Pulse Duration ◽  
Ohmic Contact ◽  
Laser Annealing ◽  
Voltage Drop ◽  
Pulsed Laser ◽  
Electrical Measurements ◽  
Low Resistance ◽  
Contact Formation ◽  
Ohmic Contact Formation

In this work, pulsed-laser-based tempering was applied for post-implant annealing of n-type N-doped 4H-SiC in order to electrically activate the dopants and to rebuild the crystal structure. The annealing was performed by a frequency-tripled Nd:YVO4 laser with a pulse duration of 60 ns. To evaluate the effects of post-implant annealing, JBS diodes were electrically characterized. The results were compared with implanted, not post-annealed JBS diodes. The electrical measurements showed a significant on-state voltage drop of 40 mV at 6 A for post-implant laser annealed diodes compared to not post-implant annealed diodes.

Low resistance ohmic contact to n-GaN with a separate layer method

1997 ◽  
Vol 41 (2) ◽  
pp. 165-168 ◽  
Author(s):  
Y.-F. Wu ◽  
W.-N. Jiang ◽  
B.P. Keller ◽  
S. Keller ◽  
D. Kapolnek ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Low Resistance ◽  
Layer Method ◽  
Separate Layer

A low-resistance, thermally stable Ohmic contact to n‐GaSb

2005 ◽  
Vol 98 (3) ◽  
pp. 033703 ◽  
Author(s):  
J. A. Robinson ◽  
S. E. Mohney
Keyword(s):  
Ohmic Contact ◽  
Thermally Stable ◽  
Low Resistance

A versatile low-resistance ohmic contact process with ohmic recess and low-temperature annealing for GaN HEMTs

2018 ◽  
Vol 33 (9) ◽  
pp. 095019 ◽  
Author(s):  
Yen-Ku Lin ◽  
Johan Bergsten ◽  
Hector Leong ◽  
Anna Malmros ◽  
Jr-Tai Chen ◽  
...  
Keyword(s):  
Low Temperature ◽  
Ohmic Contact ◽  
Contact Process ◽  
Low Resistance ◽  
Low Temperature Annealing ◽  
Gan Hemts

Development of Electrode Materials for Semiconductor Devices

2005 ◽  
Vol 475-479 ◽  
pp. 1705-1714
Author(s):  
Masanori Murakami ◽  
Yasuo Koide ◽  
Miki Moriyama ◽  
Susumu Tsukimoto
Keyword(s):  
Ohmic Contact ◽  
High Speed ◽  
Electrode Materials ◽  
Chemical Vapor ◽  
Crystal Defects ◽  
Atomic Scale ◽  
Organic Chemical ◽  
Contact Materials ◽  
Low Resistance ◽  
Metal Organic

Recent strong demands for optoelectronic communication and portable telephones have encouraged engineers to develop optoelectronic devices, microwave devices, and high-speed devices using heterostructural compound semiconductors. Although the compound crystal growth techniques had reached at a level to control the compositional stoichiometry and crystal defects on a nearly atomic scale by the advanced techniques such as molecular beam epitaxy and metal organic chemical vapor deposition techniques, development of ohmic contact materials (which play a key role to inject external electric current from the metals to the semiconductors) was still on a trial-and-error basis. Our research efforts have been focused to develop, low resistance, refractory ohmic contact materials using the deposition and annealing techniques for n-GaAs, p-ZnSe, InP, p-SiC p-CdTe etc. It was found the growth of homo- or hetero–epitaxial intermediate semiconductor layers (ISL) was essential for low resistance contact formation. The importance of hetero-structural ISL was given taking an example of n-type ohmic contact for GaAs.

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