Atomic hydrogen densities in capacitively coupled very high-frequency plasmas in H2: Effect of excitation frequency

2005 ◽  
Vol 97 (10) ◽  
pp. 103305 ◽  
Author(s):  
J. Jolly ◽  
J.-P. Booth
Keyword(s):  
High Frequency ◽  
Atomic Hydrogen ◽  
Excitation Frequency ◽  
Very High Frequency ◽  
Capacitively Coupled ◽  
H2 Effect ◽  
Very High

Effects of Driving Frequency on the Translational Temperature and Absolute Density of Si Atoms in Very High Frequency Capacitively Coupled SiF4Plasmas

2003 ◽  
Vol 42 (Part 2, No. 12B) ◽  
pp. L1532-L1534 ◽  
Author(s):  
Takayuki Ohta ◽  
Masaru Hori ◽  
Tetsuro Ishida ◽  
Toshio Goto ◽  
Masafumi Ito ◽  
...  
Keyword(s):  
High Frequency ◽  
Driving Frequency ◽  
Very High Frequency ◽  
Capacitively Coupled ◽  
Translational Temperature ◽  
Absolute Density ◽  
Very High

Large Grain Size and High Deposition Rate for Microcrystalline Silicon Prepared by VHF-GD

1994 ◽  
Vol 358 ◽  
Author(s):  
P. Hapke ◽  
F. Finger ◽  
M. Luysberg ◽  
R. Carius ◽  
H. Wagner
Keyword(s):  
Grain Size ◽  
Deposition Rate ◽  
High Frequency ◽  
Excitation Frequency ◽  
Chemical Vapour ◽  
High Deposition Rate ◽  
Very High Frequency ◽  
Deposition Parameters ◽  
Plasma Excitation ◽  
Very High

ABSTRACTThe growth mechanism and material properties of -type µc-Si:H prepared with plasma enhanced chemical vapour deposition in the very high frequency range is investigated. By increasing the plasma excitation frequency the grain size, deposition rate and Hall mobility can be simultaneously increased without having to adjust other deposition parameters in particular the temperature. This effect is explained by an enhanced selective etching of amorphous tissue and grain boundary regions together with a sufficient supply of growth species at high frequency plasmas.

Versatile High Rate Plasma Deposition and Processing with very high Frequency Excitation

1997 ◽  
Vol 467 ◽  
Author(s):  
M. Heintze
Keyword(s):  
Growth Rates ◽  
High Frequency ◽  
Plasma Deposition ◽  
Excitation Frequency ◽  
High Growth ◽  
Surface Reactivity ◽  
High Rate ◽  
Plasma Diagnostic ◽  
Very High Frequency ◽  
Very High

ABSTRACTThe interest in plasma deposition using very high frequency (VHF) excitation arose after the preparation of a-Si:H at high growth rates was demonstrated. Subsequently the improved process flexibility and the control of material properties offered by the variation of the plasma excitation frequency was recognized. The preparation of amorphous and microcrystalline thin films in a VHF-plasma is described. The increased growth rates have been attributed to an enhancement of film precursor formation at VHF, to the decreased sheath thickness as well as to an enhancement of the surface reactivity by positive ions. Plasma diagnostic investigations show that the parameters mainly affected by the excitation frequency are the ion flux to the electrodes as well as the sheaths potentials and widths, rather than the plasma density.

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